Die back side structures for warpage control
US-2020066655-A1 · Feb 27, 2020 · US
US11728285B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11728285-B2 |
| Application number | US-202117412327-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2021 |
| Priority date | Aug 26, 2021 |
| Publication date | Aug 15, 2023 |
| Grant date | Aug 15, 2023 |
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A method of manufacturing a carrier for semiconductor device packaging is provided. The method includes forming a carrier having a plurality of plateau regions separated by a plurality of channels. The carrier is configured and arranged to support a plurality of semiconductor die during a packaging operation. The plurality of channels is filled with a material configured to control warpage of the carrier.
Opening claim text (preview).
What is claimed is: 1. A method comprising: forming a carrier having a plurality of plateau regions separated by a plurality of channels, the carrier configured and arranged to support a plurality of semiconductor die during a packaging operation; and filling the plurality of channels with a structural material, the structural material configured to control warpage of the carrier. 2. The method of claim 1 , wherein a top surface of the structural material is substantially coplanar with a top surface of the plurality of plateau regions. 3. The method of claim 1 , wherein forming the carrier further comprises removing carrier material to form the plurality of channels. 4. The method of claim 3 , wherein the carrier material is removed by way of etching, sawing, laser ablation, or a combination thereof. 5. The method of claim 1 , wherein forming the carrier further comprises adding material to a base portion of the carrier, the added material configured to form the plurality of plateau regions. 6. The method of claim 5 , wherein the added material comprises a material different from the base portion of the carrier. 7. The method of claim 1 , wherein the structural material has a coefficient of thermal expansion sufficient to maintain a substantially planar condition of the carrier during the packaging operation. 8. The method of claim 1 , wherein the carrier comprises a metal, glass, quartz, or ceramic material. 9. The method of claim 1 , wherein the carrier is further configured for attaching, by way of a releasable adhesive, the plurality of semiconductor die to the plurality of plateau regions during the packaging operation. 10. An apparatus for manufacturing a packaged semiconductor device, the apparatus comprising: a carrier having a plurality of plateau regions separated by a plurality of channels, the carrier configured and arranged to support a plurality of semiconductor die during a packaging operation; and a structural material disposed in the plurality of channels, the structural material configured to control warpage of the carrier. 11. The apparatus of claim 10 , wherein a top surface of the structural material is substantially coplanar with a top surface of the plurality of plateau regions. 12. The apparatus of claim 10 , wherein the plurality of channels are formed in the carrier by way of etching, sawing, laser ablation, or a combination thereof. 13. The apparatus of claim 10 , wherein the structural material has a coefficient of thermal expansion sufficient to maintain a substantially planar condition of the carrier during the packaging operation. 14. The apparatus of claim 10 , wherein the plurality of plateau regions comprises a material different from a base portion of the carrier. 15. The apparatus of claim 10 , wherein the carrier comprises a metal, glass, quartz, or ceramic material. 16. A method comprising: forming a carrier having a plurality of vertical channels and a plurality of horizontal channels, the plurality of vertical channels and the plurality of horizontal channels configured and arranged to separate a plurality of plateau regions of the carrier; and filling the plurality of vertical channels and the plurality of horizontal channels with a structural material, the structural material configured to control warpage of the carrier during a packaging operation. 17. The method of claim 16 , wherein the carrier is configured and arranged to support a plurality of semiconductor die during the packaging operation. 18. The method of claim 16 , wherein forming the carrier further comprises removing carrier material by way of etching, sawing, laser ablation, or a combination thereof to form the plurality of vertical channels and the plurality of horizontal channels. 19. The method of claim 16 , wherein a top surface of the structural material is substantially coplanar with a top surface of the plurality of plateau regions. 20. The method of claim 16 , wherein the plurality of plateau regions comprises a material different from a base portion of the carrier.
Subject matter not provided for in other groups of this subclass · CPC title
using batch processing · CPC title
Shapes or dispositions thereof · CPC title
Mechanical treatments, e.g. deforming, punching or cutting · CPC title
protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title
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