Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Patent metadata

Field	Value
Publication number	US-11728160-B2
Application number	US-202117376403-A
Country	US
Kind code	B2
Filing date	Jul 15, 2021
Priority date	Jul 26, 2019
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

First claim

What is claimed is:

1. A method of forming an oxide film including two non-oxygen elements, the method comprising:
providing an electron donor compound on a substrate;
providing a first source material on the substrate, the first source material comprising a first central element; and
providing an oxidant on the substrate to form an oxide film,
wherein the electron donor includes an unshared electron pair or includes a double bond or a triple bond.

2. The method of claim 1 , wherein
the providing of the electron donor compound on the substrate is performed before the providing the first source material on the substrate.

3. The method of claim 2 , further comprising:
providing a second source material on the substrate before the providing of the electron donor compound on the substrate, the second source material comprising a second central element.

4. The method of claim 3 , wherein
the providing of the second source material on the substrate at least partially overlaps the providing of the electron donor compound in time.

5. The method of claim 2 , wherein
the electron donor compound includes an oxygen-containing, nitrogen-containing, sulfur-containing, or phosphorus-containing hydrocarbon compound having an unshared electron pair.

6. The method of claim 5 , wherein
the electron donor compound comprises at least one of a C1-C10 alcohol compound, a C2-C10 ether compound, a C3-C10 ketone compound, a C6-C12 aryl compound, a C3-C15 allyl compound, a C4-C15 diene compound, a C5-C20 β-diketone compound, a C5-C20 β-ketoimine compound, a C5-C20 β-diimine compound, ammonia, a C1-C10 amine compound, a C1-C10 thiol compound, and a C2-C10 thioether compound.

7. The method of claim 1 , further comprising:
providing the electron donor compound on the substrate after the providing of the first source material on the substrate and before the providing of the oxidant.

8. The method of claim 1 , wherein
the oxidant comprises at least one of H 2 O, O 2 , O 3 , N 2 O, NO, NO 2 , N 2 O 4 , H 2 O 2 , C1-C10 alcohol, C2-C10 ether, C3-C10 ketone, C1-C10 carboxylic acid, and C1-C10 ester.

9. A method of forming a dielectric film, the method comprising:
providing a substrate into a reaction chamber; and
repeating a deposition cycle until a dielectric film is formed on the substrate to a set thickness,
wherein the deposition cycle comprises:
providing a first source material on the substrate, the first source material comprising a first central element;
providing an electron donor compound on the substrate;
providing a second source material on the substrate after the providing of the electron donor compound, the second source material comprising a second central element; and
providing an oxidant on the substrate.

10. The method of claim 9 , wherein
the providing of the first source material on the substrate at least partially overlaps the providing of the electron donor compound in time.

11. The method of claim 10 , wherein
the providing of the electron donor compound ends after the providing of the first source material on the substrate ends.

12. The method of claim 11 , wherein
the providing of the electron donor compound starts before the providing of the first source material on the substrate starts.

13. The method of claim 9 , wherein the deposition cycle further comprises:
providing the electron donor compound after the providing of the second source material on the substrate and before the providing of the oxidant.

14. The method of claim 9 , wherein the deposition cycle further comprises:
providing the electron donor compound before the providing of the first source material on the substrate.

15. The method of claim 14 , wherein the deposition cycle further comprises:
providing the electron donor compound after the providing of the second source material on the substrate and before the providing of the oxidant.

16. The method of claim 9 , wherein, in the deposition cycle,
the providing of the electron donor compound on the substrate is performed before the providing of the first source material on the substrate, and
the providing of the second source material on the substrate is performed after the providing of the first source material on the substrate.

17. The method of claim 16 , wherein
the providing of the oxidant on the substrate is performed after the providing of the second source material on the substrate.

18. A method of manufacturing a semiconductor device, the method comprising:
forming a lower electrode that is electrically connected to an active region of a semiconductor substrate;
forming a dielectric film on an exposed surface of the lower electrode; and
forming an upper electrode on the dielectric film,
wherein the forming of the dielectric film comprises repeating a deposition cycle until the dielectric film is formed to a desired thickness, and
wherein the deposition cycle includes:
providing an electron donor compound on the lower electrode;
providing a first source material on the lower electrode after the providing of the electron donor compound, the first source material comprising a first central element; and
providing an oxidant on the lower electrode.

19. The method of claim 18 , further comprising:
providing a second source material on the lower electrode, the second source material comprising a second central element different from the first central element.

20. The method of claim 19 , wherein
the electron donor compound is capable of forming a van der Waals bond with the first source material and/or the second source material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Younsoo
• Kim Haeryong
• Ryu Seungmin
• Moon Sunmin
• Song Jeonggyu
• Woo Changsu
• Jung Kyooho
• Cho Younjoung

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6928

  the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/6939 Primary

  characterised by the metal · CPC title