Method of controlling charge doping in van der waals heterostructures
US-2023011913-A1 · Jan 12, 2023 · US
US11728119B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11728119-B2 |
| Application number | US-202117923949-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 15, 2021 |
| Priority date | May 20, 2020 |
| Publication date | Aug 15, 2023 |
| Grant date | Aug 15, 2023 |
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A photocathode 4 includes an optically transparent conductive layer provided between a translucent substrate and a photoelectric conversion layer. The optically transparent conductive layer is formed of a constituent material including carbon. A Raman spectrum of the constituent material has a peak of a band, a peak of a band, a peak of a band, and a peak of a band.
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The invention claimed is: 1. A photocathode comprising: a translucent substrate having one surface on which light is incident and an other surface emitting the light incident through the one surface; a photoelectric conversion layer provided on the other surface of the translucent substrate and convert the light emitted through the other surface into photoelectrons; and an optically transparent conductive layer provided between the translucent substrate and the photoelectric conversion layer, wherein the optically transparent conductive layer is formed of a constituent material including carbon, and wherein a Raman spectrum of the constituent material has a peak of a D1 band, a peak of a G band, a peak of a 2D1 band, and a peak of a (D1+G) band. 2. The photocathode according to claim 1 , wherein a smallest value of a Raman intensity between the peak of the D1 band and the peak of the G band is higher than a base value of a Raman intensity between the peak of the G band and the peak of the 2D1 band. 3. The photocathode according to claim 1 , wherein a Raman intensity in the peak of the D1 band is higher than a Raman intensity in the peak of the G band. 4. The photocathode according to claim 1 , wherein a Raman intensity in the peak of the D1 band is lower than a Raman intensity in the peak of the G band. 5. A method for manufacturing a photocathode, wherein the photocathode according to claim 1 is manufactured, the method for manufacturing a photocathode comprising: a step of disposing a translucent substrate inside a vapor deposition device; a step of forming an optically transparent conductive layer by introducing gas including carbon into the vapor deposition device and performing vapor deposition of a constituent material including carbon on the translucent substrate; and a step of forming a photoelectric conversion layer on the optically transparent conductive layer. 6. The method for manufacturing a photocathode according to claim 5 , wherein a vapor deposition time for the constituent material is 60 minutes or shorter.
Photo-emissive cathodes (H01J1/35 takes precedence) · CPC title
of photo-emissive cathodes; of secondary-emission electrodes · CPC title
Cathode arrangements (construction of photo cathodes H01J40/06, H01J40/16, H01J47/00, H01J49/08) · CPC title
Photo-emissive cathodes · CPC title
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