Photocathodes with an enhancement layer and method of making the same

Patent metadata

Field	Value
Publication number	US-11062890-B1
Application number	US-202016840187-A
Country	US
Kind code	B1
Filing date	Apr 3, 2020
Priority date	Apr 5, 2019
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

A photocathode assembly may include: a reflective substrate; an enhancement layer on the reflective substrate; and a photosensitive film on the enhancement layer, wherein the enhancement layer has a thickness of about 10 nm or less.

First claim

We claim:

1. A photocathode assembly, comprising:
a reflective substrate;
an enhancement layer on the reflective substrate; and
a photosensitive film on the enhancement layer,
wherein the enhancement layer has a thickness of about 10 nm or less and the reflective substrate has a reflectivity of 50% or greater, and
the enhancement layer is between the reflective substrate and the photosensitive film.

2. The photocathode assembly of claim 1 , wherein the enhancement layer comprises one or more atomic layers of graphene sheet, hexagonal boron nitride, transition metal dichalcogenides, transition metal carbides, transition metal nitrides, or transition metal carbonitrides.

3. The photocathode assembly of claim 1 , wherein the enhancement layer comprises a single atomic layer of graphene sheet, a single atomic layer of hexagonal boron nitride, a monolayer of transition metal dichalcogenides, a monolayer of transition metal carbides, a monolayer of transition metal nitrides, or a monolayer of transition metal carbonitrides.

4. The photocathode assembly of claim 1 , wherein the reflective substrate comprises a material selected from stainless steel, Au, Al, Ag, W, Mo, Ni, Pt, Pd, Cu, Si, SiO 2 , GaAs, and Si 3 N 4 .

5. The photocathode assembly of claim 1 , wherein the photosensitive film is selected from a metal, a bi-alkali compound, a multi-alkali compound, an alkali-semiconductor alloy, an alkali-halide, an alkali bi-metallic alloy, polycrystalline diamond, and combinations thereof.

6. The photocathode assembly of claim 1 , wherein the photosensitive film is selected from Cu, Ni, Mg, Y, Sm, Ba, Nb, Ca, Au, Mg—Ba, a bi-alkali compound, a multi-alkali compound, K 2 CsSb, Cs 3 Sb, KCsSb mixed with CsBr, K 3 Sb, Na 2 KSb, Li 2 CsSb, Cs 2 Te, CsTe mixed with CsBr, CsKTe, K 2 Te, Rb 2 Te, RbCsTe; CsI; CsI—Ge, GaAs, InGaAs, CsAu, RbAu, polycrystalline diamond, and combinations thereof.

7. The photocathode assembly of claim 1 , further comprising a sealing layer on a side of the photosensitive film facing away from the enhancement layer.

8. The photocathode assembly of claim 7 , wherein the sealing layer comprises a metal halide, SiOx, hexatricontane (HTC), and/or calcium stearate (CaSt).

9. A method for manufacturing a photocathode assembly, the method comprising:
depositing an enhancement layer on a reflective substrate to form an enhancement layer-reflective substrate laminate, the enhancement layer has a thickness of about 10 nm or less; and
depositing a photosensitive film on the enhancement layer-reflective substrate laminate to form a photosensitive film-enhancement layer-reflective substrate laminate,
wherein the reflective substrate has a reflectivity of 50% or greater, and
the enhancement layer is between the reflective substrate and the photosensitive film.

10. The method of claim 9 , wherein the enhancement layer comprises one or more atomic layers of graphene sheet, hexagonal boron nitride, transition metal dichalcogenides, transition metal carbides, transition metal nitrides, or transition metal carbonitrides.

11. The method of claim 9 , wherein the enhancement layer comprises a single atomic layer of graphene sheet, a single atomic layer of hexagonal boron nitride, a monolayer of transition metal dichalcogenides, a monolayer of transition metal carbides, a monolayer of transition metal nitrides, or a monolayer of transition metal carbonitrides.

12. The method of claim 9 , wherein the reflective substrate comprises a material selected from stainless steel, Au, Al, Ag, W, Mo, Ni, Pt, Pd, Cu, Si, SiO 2 and Si 3 N 4 .

13. The method of claim 9 , wherein the depositing of the enhancement layer is through chemical vapor deposition.

14. The method of claim 9 , wherein the depositing of the enhancement layer comprises:
depositing the enhancement layer on a carrier substrate to form an enhancement layer-carrier laminate;
applying a polymer film on the enhancement layer to form a polymer film-enhancement layer-carrier laminate;
removing the carrier substrate from the polymer film-enhancement layer-carrier laminate to form a polymer film-enhancement layer laminate;
attaching the reflective substrate to the polymer film-enhancement layer laminate to form a polymer film-enhancement layer-reflective substrate laminate; and
removing the polymer film from the polymer film-enhancement layer-reflective substrate laminate to form an enhancement layer-reflective substrate laminate.

15. The method of claim 9 , further comprising depositing a sealing layer on the photosensitive film to form a sealing layer-photosensitive film-enhancement layer-reflective substrate laminate.

16. The method of claim 9 , wherein the depositing of the photosensitive film on the enhancement layer-reflective substrate laminate comprises depositing the photosensitive film directly on the enhancement layer of the enhancement layer-reflective substrate laminate through chemical vapor deposition.

17. The method of claim 9 , wherein the photosensitive film is selected from a metal, a bi-alkali compound, a multi-alkali compound, an alkali-semiconductor alloy, an alkali-halide, an alkali bi-metallic alloy, polycrystalline diamond, and combinations thereof.

18. A method for improving quantum efficiency of bialkali photocathodes, the method comprising:
depositing an enhancement layer on a reflective substrate to form an enhancement layer-reflective substrate laminate, the enhancement layer has a thickness of about 10 nm or less; and
depositing a photosensitive film on the enhancement layer-reflective substrate laminate to form a photosensitive film-enhancement layer-reflective substrate laminate,
wherein the reflective substrate has a reflectivity of 50% or greater, and
the enhancement layer is between the reflective substrate and the photosensitive film.

19. The method of claim 18 , wherein the enhancement layer comprises one or more atomic layers of graphene sheet, hexagonal boron nitride, transition metal dichalcogenides, transition metal carbides, transition metal nitrides, or transition metal carbonitrides.

20. The method of claim 18 , wherein an improvement in quantum efficiency is from about 10% to about 80% greater than a quantum efficiency of a corresponding bialkali photocathode without the enhancement layer.

Assignees

• Triad Nat Security Llc

Inventors

• Yamaguchi Hisato
• Moody Nathan Andrew
• Liu Fangze

Classifications

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H01J40/06 Primary

  Photo-emissive cathodes · CPC title

• H01J9/12 Primary

  of photo-emissive cathodes; of secondary-emission electrodes · CPC title

• H01L33/56

  Electricity · mapped topic