Photoresist for semiconductor fabrication

Patent metadata

Field	Value
Publication number	US-11726405-B2
Application number	US-202117177008-A
Country	US
Kind code	B2
Filing date	Feb 16, 2021
Priority date	Sep 30, 2020
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

First claim

What is claimed is:

1. An extreme ultraviolet (EUV) photoresist precursor, comprising:
an aromatic di-dentate ligand comprising a first pyrazine ring and a second pyrazine ring;
a transition metal coordinated to a nitrogen atom on the first pyrazine ring and a nitrogen atom on the second pyrazine ring;
a first EUV cleavable ligand coordinated to the transition metal; and
a second EUV cleavable ligand coordinated to the transition metal.

2. The EUV photoresist precursor of claim 1 ,
wherein the aromatic di-dentate ligand comprises bipyrazine,
wherein the first pyrazine ring is connected to the second pyrazine ring.

3. The EUV photoresist precursor of claim 1 , wherein the aromatic di-dentate ligand comprises 2,2′-bipyrazine.

4. The EUV photoresist precursor of claim 1 , wherein the transition metal has a high atomic absorption cross section.

5. The EUV photoresist precursor of claim 1 , wherein the transition metal is selected from a group consisting of tin (Sn) ion, bismuth (Bi) ion, antimony (Sb) ion, indium (In) ion, and tellurium (Te) ion.

6. The EUV photoresist precursor of claim 1 , further comprising:
poly(2-hydroxyethyl methacrylate) (pHEMA), poly(4-hydroxystyrene) (PHS), polyglycidyl ether, or polyether polyol.

7. The EUV photoresist precursor of claim 1 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.

8. The EUV photoresist precursor of claim 7 , wherein the EUV cleavable ligand comprises a fluoro-substitute.

9. A photoresist precursor, comprising:
an aromatic di-dentate ligand;
a transition metal coordinated to the aromatic di-dentate ligand; and
an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
wherein the aromatic di-dentate ligand comprises a first pyrazine molecule and a second pyrazine molecule.

10. The photoresist precursor of claim 9 , wherein the aromatic di-dentate ligand comprises 2,2′-bipyrazine.

11. The photoresist precursor of claim 9 , wherein the transition metal has a high atomic absorption cross section.

12. The photoresist precursor of claim 9 ,
wherein the first pyrazine molecule comprises a first nitrogen atom,
wherein the second pyrazine molecule comprises a second nitrogen atom,
wherein the transition metal is coordinated to the first nitrogen atom and the second nitrogen atom.

13. The photoresist precursor of claim 9 , wherein the transition metal is selected from a group consisting of tin (Sn), bismuth (Bi), antimony (Sb), indium (In), and tellurium (Te).

14. The photoresist precursor of claim 9 , further comprising:
poly(2-hydroxyethyl methacrylate) (pHEMA), poly(4-hydroxystyrene) (PHS), polyglycidyl ether, or polyether polyol.

15. The photoresist precursor of claim 9 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.

16. The photoresist precursor of claim 9 , wherein the EUV cleavable ligand comprises a fluoro-substitute.

17. A photoresist precursor, comprising:
a 2,2′-bipyrazine molecule;
a transition metal coordinated to the 2,2′-bipyrazine molecule; and
an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
wherein the transition metal is selected from a group consisting of tin (Sn) ion, bismuth (Bi) ion, antimony (Sb) ion, indium (In) ion, and tellurium (Te) ion.

18. The photoresist precursor of claim 17 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.

19. The photoresist precursor of claim 17 , wherein the transition metal is coordinated to two nitrogen atoms of the 2,2′-bipyrazine molecule.

20. The photoresist precursor of claim 17 is charge neutral.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Chih-Cheng
• Kuo Yi-Chen
• Chen Yen-Yu
• Li Jr-Hung
• Yang Chi-Ming
• Lee Tze-Liang

Classifications

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/0042 Primary

  with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

• G03F7/40 Primary

  Treatment after imagewise removal, e.g. baking · CPC title

• C07F9/92

  Aromatic compounds · CPC title

• C07F11/00

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title