Continuous replenishment crystal growth

US11725304B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11725304-B2
Application numberUS-202217646989-A
CountryUS
Kind codeB2
Filing dateJan 4, 2022
Priority dateNov 25, 2019
Publication dateAug 15, 2023
Grant dateAug 15, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

First claim

Opening claim text (preview).

The invention claimed is: 1. An apparatus for growing a crystal, the apparatus comprising: a growth chamber having: a growth crucible configured to contain a liquid melt; and a die located above the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening; a melt chamber thermally isolated from the growth chamber, the melt chamber having: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt; and at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible, wherein the at least one capillary conveyor is formed from a pair of plates positioned a distance apart. 2. The apparatus of claim 1 , wherein the melt chamber is thermally isolated from the growth chamber by insulation. 3. The apparatus of claim 1 , further comprising a feedstock conveyor in communication with the melt crucible configured to supply the feedstock material to the melt crucible. 4. The apparatus of claim 1 , wherein the melt crucible has a larger volume than the growth crucible. 5. The apparatus of claim 4 , wherein the melt crucible has a volume of about 1,500 cm 3 to about 100,000 cm 3 and the growth crucible has a volume of about 13,000 cm 3 to about 50,000 cm 3 . 6. The apparatus of claim 1 , wherein the capillary conveyor is positioned to transport liquid melt from the melt crucible to the growth crucible via capillary action caused by a higher liquid level in the melt crucible, either due to depletion of the liquid melt in the growth crucible as a crystal is grown or addition of feedstock to raise the liquid level in the melt crucible. 7. The apparatus of claim 1 , wherein the plates are metallic. 8. The apparatus of claim 7 , wherein the metallic plates are positioned a distance of about 0.05 cm to about 0.3 cm apart. 9. The apparatus of claim 7 , wherein the pair of metallic plates each have an upside down U-shape with a first leg of the upside down U-shape being positioned within the melt crucible, a second leg of the upside down U-shape being positioned within the growth crucible, and a portion extending between the first leg and the second leg. 10. The apparatus of claim 9 , wherein the portion extending between the first leg and the second leg comprises at least one rotary flow element provided in a path of the liquid melt. 11. The apparatus of claim 10 , wherein the at least one rotary flow element comprises at least one portion extending from an inner surface thereof configured to cause bubbles to move to a central area of the at least one rotary flow element. 12. The apparatus of claim 10 , wherein the rotary flow element comprises a cavity between the two metallic plates with a geometry conducive to rotational flow. 13. The apparatus of claim 10 , wherein the rotary flow element is cone shaped.

Assignees

Inventors

Classifications

  • C30B35/007Primary

    Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title

  • Crucibles or containers for supporting the melt · CPC title

  • Heating of the melt or the crystallised materials · CPC title

  • Crucibles or containers · CPC title

  • C30B29/20Primary

    Aluminium oxides · CPC title

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Frequently asked questions

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What does patent US11725304B2 cover?
An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber include…
Who is the assignee on this patent?
Ii Vi Delaware Inc
What technology area does this patent fall under?
Primary CPC classification C30B35/007. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 15 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).