Method for manufacturing silicon carbide single crystal
US-2017335487-A1 · Nov 23, 2017 · US
US11725304B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11725304-B2 |
| Application number | US-202217646989-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2022 |
| Priority date | Nov 25, 2019 |
| Publication date | Aug 15, 2023 |
| Grant date | Aug 15, 2023 |
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An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.
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The invention claimed is: 1. An apparatus for growing a crystal, the apparatus comprising: a growth chamber having: a growth crucible configured to contain a liquid melt; and a die located above the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening; a melt chamber thermally isolated from the growth chamber, the melt chamber having: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt; and at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible, wherein the at least one capillary conveyor is formed from a pair of plates positioned a distance apart. 2. The apparatus of claim 1 , wherein the melt chamber is thermally isolated from the growth chamber by insulation. 3. The apparatus of claim 1 , further comprising a feedstock conveyor in communication with the melt crucible configured to supply the feedstock material to the melt crucible. 4. The apparatus of claim 1 , wherein the melt crucible has a larger volume than the growth crucible. 5. The apparatus of claim 4 , wherein the melt crucible has a volume of about 1,500 cm 3 to about 100,000 cm 3 and the growth crucible has a volume of about 13,000 cm 3 to about 50,000 cm 3 . 6. The apparatus of claim 1 , wherein the capillary conveyor is positioned to transport liquid melt from the melt crucible to the growth crucible via capillary action caused by a higher liquid level in the melt crucible, either due to depletion of the liquid melt in the growth crucible as a crystal is grown or addition of feedstock to raise the liquid level in the melt crucible. 7. The apparatus of claim 1 , wherein the plates are metallic. 8. The apparatus of claim 7 , wherein the metallic plates are positioned a distance of about 0.05 cm to about 0.3 cm apart. 9. The apparatus of claim 7 , wherein the pair of metallic plates each have an upside down U-shape with a first leg of the upside down U-shape being positioned within the melt crucible, a second leg of the upside down U-shape being positioned within the growth crucible, and a portion extending between the first leg and the second leg. 10. The apparatus of claim 9 , wherein the portion extending between the first leg and the second leg comprises at least one rotary flow element provided in a path of the liquid melt. 11. The apparatus of claim 10 , wherein the at least one rotary flow element comprises at least one portion extending from an inner surface thereof configured to cause bubbles to move to a central area of the at least one rotary flow element. 12. The apparatus of claim 10 , wherein the rotary flow element comprises a cavity between the two metallic plates with a geometry conducive to rotational flow. 13. The apparatus of claim 10 , wherein the rotary flow element is cone shaped.
Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title
Crucibles or containers for supporting the melt · CPC title
Heating of the melt or the crystallised materials · CPC title
Crucibles or containers · CPC title
Aluminium oxides · CPC title
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