PECVD deposition system for deposition on selective side of the substrate

Patent metadata

Field	Value
Publication number	US-11725283-B2
Application number	US-202117644761-A
Country	US
Kind code	B2
Filing date	Dec 16, 2021
Priority date	Aug 31, 2017
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.

First claim

What is claimed is:

1. A shower-pedestal for supplying processing gases to an underside of a substrate during semiconductor processing operations, the shower-pedestal comprising:
a main body having a top surface;
a plurality of spacers connected with the main body and arranged so as to support a carrier ring sized larger than the substrate, the spacers extending away from the top surface, each spacer having a corresponding spacer top surface with a corresponding recessed region, each recessed region configured to receive a corresponding support extension projecting from the carrier ring that the spacers are configured to receive;
an interior volume located within the main body;
a plurality of orifices arranged on the top surface, connected to the interior volume, and configured to direct a reactant gas toward a substrate located above the top surface; and
a plurality of lift pin holes, each lift pin hole extending through the main body and configured to permit a corresponding lift pin to extend therethrough.

2. The shower-pedestal of claim 1 , wherein:
at least some of the orifices are arranged in a first hole pattern in an interior area of the top surface of the main body, and
the orifices in the first hole pattern extend along directions perpendicular to the top surface.

3. The shower-pedestal of claim 2 , wherein:
at least some additional orifices are arranged in a second hole pattern that encircles the interior area, and
the orifices in the second hole pattern extend along non-perpendicular angles relative to the top surface of the main body.

4. The shower-pedestal of claim 1 , further comprising a gas entry path that leads to a baffle located within the interior volume.

5. The shower-pedestal of claim 4 , wherein the orifices are distributed across an interior region of the top surface.

6. The shower-pedestal of claim 1 , wherein the orifices are arranged in a plurality of concentric circular rings centered on a center of the shower-pedestal and extending to an outer region of the shower-pedestal.

7. The shower-pedestal of claim 6 , wherein at least an outer ring of the orifices includes a plurality of angled orifices that are tilted away from perpendicular to the top surface and in a direction away from the center of the shower-pedestal.

8. The shower-pedestal of claim 1 , wherein there are three spacers.

9. The shower-pedestal of claim 1 , wherein the spacers each have one or more support surfaces configured to mate with support extensions on the carrier ring that the spacers are configured to support.

10. The shower-pedestal of claim 9 , wherein there are three spacers.

11. The shower-pedestal of claim 1 , wherein there are three spacers.

12. The shower-pedestal of claim 1 , further comprising a plurality of lift pins, each lift pin configured to extend through a corresponding one of the lift pin holes in the shower-pedestal.

13. The shower-pedestal of claim 12 , wherein there are three lift pins.

Assignees

• Lam Res Corp

Inventors

• Shaikh Fayaz
• Linebarger Nick
• Bailey Curtis

Classifications

• H10P72/0452

  characterised by the layout of the process chambers · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title