Resist underlayer film-forming composition containing indolocarbazole novolak resin

Patent metadata

Field	Value
Publication number	US-11720024-B2
Application number	US-202217880761-A
Country	US
Kind code	B2
Filing date	Aug 4, 2022
Priority date	Dec 1, 2015
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

First claim

The invention claimed is:

1. A resist underlayer film containing a polymer consisting of unit structure of the following formula (1):

wherein A is a divalent group having at least two amino groups, the divalent group is derived from a compound having an indolocarbazole structure, B 1 is a hydrogen atom, and B 2 is a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof.

2. The resist underlayer film according to claim 1 , wherein B 1 and B 2 are groups derived from aldehydes or ketones having a hydrogen atom, an alkyl group, a benzene ring group and a fused ring group, which are raw materials for producing a polymer having a unit structure represented by the formula (1), respectively.

3. The resist underlayer film according to claim 1 , wherein an amount of sublimate generated in 180 seconds from the resist underlayer film when baked at 300° C. is 0.25 or less.

4. The resist underlayer film according to claim 1 , wherein A is a divalent group derived from the indolocarbazole structure of a compound of formula (2):

wherein R 1 and R 2 are each independently a hydrogen atom, a C 1-10 alkyl group, or a C 6-40 aryl group.

5. A method for manufacturing a resist underlayer film containing a polymer having a unit structure of the following formula (1):

wherein A is a divalent group having at least two amino groups, the divalent group is derived from a compound having an indolocarbazole structure, B 1 is a hydrogen atom, and B 2 is a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, the method comprising applying a resist underlayer film-forming composition comprising the polymer having the unit structure of formula (1) to a substrate, followed by baking.

6. The method for manufacturing the resist underlayer film according to claim 5 , wherein B 1 and B 2 are groups derived from aldehydes or ketones having a hydrogen atom, an alkyl group, a benzene ring group and a fused ring group, which are raw materials for producing a polymer having a unit structure represented by the formula (1), respectively.

7. The method for manufacturing the resist underlayer film according to claim 5 , wherein an amount of sublimate generated in 180 seconds from the resist underlayer film when baked at 300° C. is 0.25 or less.

8. The method for manufacturing the resist underlayer film according to claim 5 , wherein A is a divalent group derived from the indolocarbazole structure of a compound of formula (2):

wherein R 1 and R 2 are each independently a hydrogen atom, a C 1-10 alkyl group, or a C 6-40 aryl group.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Tokunaga Hikaru
• Saito Daigo
• Hashimoto Keisuke
• Sakamoto Rikimaru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• C08G12/26

  with heterocyclic compounds · CPC title

• C08G16/0268

  containing nitrogen in the ring · CPC title