Resist underlayer film-forming composition contaning pyrrole novolac resin

Patent metadata

Field	Value
Publication number	US-2016147151-A1
Application number	US-201414900406-A
Country	US
Kind code	A1
Filing date	Jun 23, 2014
Priority date	Jun 25, 2013
Publication date	May 26, 2016
Grant date	—

Abstract

An excellent resist underlayer film having a selectivity of dry etching rate close to that of a resist, selectivity of dry etching rate lower than that of a resist, or selectivity of dry etching rate lower than that of semiconductor substrate. Resist underlayer film-forming composition including a polymer containing unit structure of Formula (1):

(where R 3 is hydrogen atom, or C 6-40 aryl group or heterocyclic group optionally substituted with halogen group, nitro group, amino group, carbonyl group, C 6-40 aryl group, or hydroxy group; R 4 is a hydrogen atom, or C 1-10 alkyl group, C 6-40 aryl group, or heterocyclic group optionally substituted with halogen group, nitro group, amino group, or hydroxy group; R 3 and R 4 optionally form ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).

First claim

1 . A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1):

(where R 1 is selected from the group consisting of a hydrogen atom, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination thereof, and at this time, the alkyl group, the alkenyl group, or the aryl group optionally contains an ether bond, a ketone bond, or an ester bond; R 2 is selected from the group consisting of a halogen group, a nitro group, an amino group, a hydroxy group, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination thereof, and at this time, the alkyl group, the alkenyl group, or the aryl group optionally contains an ether bond, a ketone bond, or an ester bond; R 3 is a hydrogen atom, or a C 6-40 aryl group or a heterocyclic group optionally substituted with a halogen group, a nitro group, an amino group, a carbonyl group, a C 6-40 aryl group, or a hydroxy group; R 4 is a hydrogen atom, or a C 1-10 alkyl group, a C 6-40 aryl group, or a heterocyclic group optionally substituted with a halogen group, a nitro group, an amino group, or a hydroxy group; R 3 and R 4 optionally form a ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).

2 . The resist underlayer film-forming composition according to claim 1 , wherein in Formula (1), R 3 is a benzene ring, a naphthalene ring, an anthracene ring, or a pyrene ring; R 4 is a hydrogen atom; and n is 0.

3 . The resist underlayer film-forming composition according to claim 1 , further comprising a crosslinking agent.

4 . The resist underlayer film-forming composition according to claim 1 , further comprising an acid and/or an acid generator.

5 . A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate and baking the applied resist underlayer film-forming composition.

6 . A method for forming a resist pattern for use in semiconductor production, the method comprising the step of:
forming an underlayer film by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate and baking the applied resist underlayer film-forming composition.

7 . A method for producing a semiconductor device, the method comprising the steps of:
forming an underlayer film from the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate; forming a resist film on the underlayer film; forming a resist pattern by irradiation with light or an electron beam and development; etching the underlayer film by using the resist pattern; and processing the semiconductor substrate by using the patterned underlayer film.

8 . A method for producing a semiconductor device, the method comprising the steps of:
forming an underlayer film from the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the resist pattern; etching the underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

9 . The method for producing a semiconductor device according to claim 8 , wherein the hard mask is formed by vapor deposition of an inorganic substance.

10 . A polymer containing a unit structure of Formula (5):

(where R 21 is selected from the group consisting of a hydrogen atom, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination thereof, and at this time, the alkyl group, the alkenyl group, or the aryl group optionally contains an ether bond, a ketone bond, or an ester bond; R 22 is selected from the group consisting of a halogen group, a nitro group, an amino group, a hydroxy group, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination thereof, and at this time, the alkyl group, the alkenyl group, or the aryl group optionally contains an ether bond, a ketone bond, or an ester bond; R 23 is a hydrogen atom, or a C 6-40 aryl group or a heterocyclic group optionally substituted with a halogen group, a nitro group, an amino group, a carbonyl group, a C 6-40 aryl group, or a hydroxy group; R 24 is a C 1-10 alkyl group, a C 6-40 aryl group, or a heterocyclic group optionally substituted with a halogen group, a nitro group, an amino group, or a hydroxy group; R 23 and R 24 optionally form a ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Shinjo Tetsuya
• Someya Yasunobu
• Karasawa Ryo
• Nishimaki Hirokazu
• Endo Takafumi
• Hashimoto Keisuke

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• C08G12/26

  with heterocyclic compounds · CPC title