Techniques for controlling precursors in chemical deposition processes

Patent metadata

Field	Value
Publication number	US-11718914-B2
Application number	US-202017012980-A
Country	US
Kind code	B2
Filing date	Sep 4, 2020
Priority date	Dec 29, 2017
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

First claim

What is claimed is:

1. A method of controlling precursor flow, comprising:
measuring a change in detected signal intensity in a cell of the gas delivery system, caused by the flow of a precursor;
determining a precursor flux value based upon the change in the detected signal intensity;
determining a flux error value based upon the precursor flux value;
calculating a new set of temperature setpoints to be applied to an ampoule that contains the precursor; and
checking for an end-of ampoule-life condition when the new set of temperature setpoints is not within a set of current temperature limits of the ampoule.

2. The method of claim 1 , wherein the measuring the change comprises:
receiving a first reference signal in the cell at a first instance, the first reference signal indicative of a detector performance at the first instance for a detector, the detector to detect a light intensity from a light source;
receiving a background signal at the first instance, the background signal being generated by the detector;
receiving a second reference signal at a second instance, subsequent to the first instance, the second reference signal indicative of the detector performance at the second instance for the detector; and
receiving a precursor signal from the detector at a third instance, subsequent to the first instance, when the precursor is flowing in the cell and light is generated by the light source.

3. The method of claim 1 , wherein the providing the flow of the precursor comprises providing a plurality of pulses at a plurality of instances of the precursor, the method further comprising calculating an integrated flux of the precursor based upon determining the precursor flux value at the plurality of instances.

4. The method of claim 1 , further comprising:
determining a warning band condition based upon the precursor flux value; and
adjusting a temperature of the ampoule based upon the warning band condition.

5. The method of claim 4 , wherein the adjusting the temperature comprises:
determining a temperature adjustment
ΔT, where ΔT=P*€+D*d€/dt+I*∫€/dt,
where P, I and D are a proportional, integral, and derivative gains, and where € is an error based upon the set of current temperature limits of the ampoule.

6. The method of claim 4 , wherein the adjusting the temperature comprises:
applying the new set of temperature setpoints to control heating of the ampoule when the new set of temperature setpoints are within the set of current temperature limits.

7. The method of claim 6 , wherein the adjusting the temperature comprises:
recalculating ΔT to generate a conservative ΔT based upon a most conservative limit when the end-of ampoule life condition has not been met; and
calculating the new set of temperature setpoints to be applied to the ampoule based upon the conservative ΔT.

8. The method of claim 1 , further comprising:
determining a fault condition based upon the precursor flux value; and
sending a notification signal of an excursion, when a substrate being processed is during the fault condition is not a first substrate.

9. A method, comprising:
determining a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor;
determining a flux error value based upon the precursor flux value;
determining a temperature adjustment ΔT, based upon the flux error value;
calculating a new set of temperature setpoints to be applied to the ampoule; and
checking for an end-of ampoule-life condition when the new set of temperature setpoints is not within a set of current temperature limits of the ampoule.

10. The method of claim 9 , comprising determining the precursor flux value by:
receiving a first reference signal in the cell, generated at a first instance, the first reference signal indicative of a detector performance at the first instance for a detector, the detector to detect a light intensity from a light source;
receiving a background signal, generated at the first instance, the background signal being generated by the detector;
receiving a second reference signal, generated at a second instance, subsequent to the first instance, the second reference signal indicative of the detector performance at the second instance for the detector; and
receiving a precursor signal, generated at a third instance, subsequent to the first instance, when the precursor is flowing in the cell.

11. The method of claim 9 , further comprising:
applying the new set of temperature setpoints to control heating of the ampoule when the new set of temperature setpoints are within the set of current temperature limits.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Babayan Elaina
• White Sarah
• Venugopal Vijay
• Bakke Jonathan

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P74/00

  Testing or measuring during manufacture or treatment of wafers, substrates or devices · CPC title

• H10P72/0604 Primary

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0612

  Production flow monitoring, e.g. for increasing throughput · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title