Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof

Patent metadata

Field	Value
Publication number	US-11717809-B2
Application number	US-202217899535-A
Country	US
Kind code	B2
Filing date	Aug 30, 2022
Priority date	Aug 24, 2020
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure. In another aspect is provided a metal-semiconductor hybrid structure that includes a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and a second component comprising a metal from Group 7-Group 11.

First claim

What is claimed is:

1. A metal-semiconductor hybrid structure, comprising:
a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16, the first component having an average size of about 3 nm to about 20 nm as determined by transmission electron microscopy; and
a second component comprising a metal from Group 7-Group 11, the second component having an average size of about 0.5 nm to about 3 nm as determined by transmission electron microscopy, wherein the Group 11-Group 14 metal of the first component and the Group 7-Group 11 metal of the second component are the same or different, wherein the metal-semiconductor hybrid structure has a molar ratio of the Group 7-Group 11 metal to the Group 11-Group 14 metal from about 1:20 to about 1:5.

2. The metal-semiconductor hybrid structure of claim 1 , wherein the Group 11-Group 14 metal of the first component and the Group 7-Group 11 metal of the second component are different.

3. The metal-semiconductor hybrid structure of claim 1 , wherein:
the Group 11-Group 14 metal comprises Cd, Zn, Cu, Pb, Ag, Hg, In, or combinations thereof;
the Group 7-Group 11 metal comprises Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, Co, Ni, Fe, or combinations thereof; or
combinations thereof.

4. The metal-semiconductor hybrid structure of claim 1 , wherein the Group 7-Group 11 metal of the second component comprises Co, Ni, Fe, or combinations thereof.

5. The metal-semiconductor hybrid structure of claim 1 , wherein:
the Group 11-Group 14 metal of the first precursor component Cd;
the Group 7-Group 11 metal of the second component comprises Au, Pd, or Pt; or
or combinations thereof.

6. The metal-semiconductor hybrid structure of claim 1 , wherein:
the average size of the first component is from about 4 nm to about 15 nm;
the average size of the second component is from about 0.5 nm to about 1.5 nm;
the metal-semiconductor hybrid structure has a nanocluster density from about 0.05 nm −3 to about 0.60 nm −3 ; or
combinations thereof.

7. A process for converting a reactant to a product, comprising:
introducing a reactant with a metal-semiconductor hybrid structure, the metal-semiconductor hybrid structure comprising:
a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16, the first component having an average size of about 3 nm to about 20 nm as determined by transmission electron microscopy; and
a second component comprising a metal from Group 7-Group 11, the second component having an average size of about 0.5 nm to about 3 nm as determined by transmission electron microscopy, wherein the Group 11-Group 14 metal of the first component and the Group 7-Group 11 metal of the second component are the same or different.

8. The process of claim 7 , wherein:
the Group 11-Group 14 metal of the first component comprises Cd;
the Group 7-Group 11 metal of the second component comprises Au, Pd, or Pt; or
combinations thereof.

Assignees

• Honda Motor Co Ltd

Inventors

• Chen Shutang
• Chen Gugang

Classifications

• B01J35/45

  Nanoparticles · CPC title

• B01J2235/00

  Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

• B01J2235/30

  Scanning electron microscopy; Transmission electron microscopy · CPC title

• B01J23/52 Primary

  Gold · CPC title

• B01J23/42

  Platinum · CPC title