Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof

Patent metadata

Field	Value
Publication number	US-11458461-B2
Application number	US-202017001078-A
Country	US
Kind code	B2
Filing date	Aug 24, 2020
Priority date	Aug 24, 2020
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure. In another aspect is provided a metal-semiconductor hybrid structure that includes a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and a second component comprising a metal from Group 7-Group 11.

First claim

What is claimed is:

1. A process for producing a metal-semiconductor hybrid structure, comprising:
introducing, under first conditions, a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal;
introducing, under second conditions, a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture, the metal of the first precursor being the same or different than the metal of the second precursor; and
introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure, the metal-semiconductor hybrid structure having a molar ratio of Group 7-Group 11 metal to Group 11-Group 14 metal that is from about 1:20 to about 1:5.

2. The process of claim 1 , wherein the anion precursor comprises an element from Group 15-Group 16.

3. The process of claim 2 , wherein the metal-semiconductor hybrid structure further comprises the Group 15-Group 16 element.

4. The process of claim 2 , wherein the Group 15-Group 16 element comprises S, Se, Te, P, or combinations thereof.

5. The process of claim 1 , wherein the metal of the first precursor is different than the metal of the second precursor.

6. The process of claim 1 , wherein the Group 11-Group 14 metal of the first precursor comprises Cd, Zn, Cu, Pb, Ag, Hg, In, or combinations thereof.

7. The process of claim 1 , wherein the Group 7-Group 11 metal of the second precursor comprises Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, or combinations thereof.

8. The process of claim 1 , wherein the Group 7-Group 11 metal of the second precursor comprises Co, Ni, Fe, or combinations thereof.

9. The process of claim 1 , wherein:
the Group 11-Group 14 metal of the first precursor comprises Cd;
the Group 7-Group 11 metal of the second precursor comprises Au, Pd, or Pt; or
combinations thereof.

10. The process of claim 1 , wherein the amine is an alkylamine.

11. The process of claim 10 , wherein the alkylamine comprises tetradecylamine (TDA), oleylamine (OLA), octadecylamine (ODA), hexadecylamine (HDA), dodecylamine (DDA), or combinations thereof.

12. The process of claim 1 , wherein the metal-semiconductor hybrid structure comprises a first component comprising the Group 11-Group 14 metal, a second component comprising the Group 7-Group 11 metal, and the second component is on a surface of the first component.

13. The process of claim 12 , wherein:
an average size of the first component is from about 3 nm to about 20 nm, as determined by transmission electron microscopy;
an average size of the second component is from about 0.5 nm to about 3 nm, as determined by transmission electron microscopy; or
combinations thereof.

14. The process of claim 12 , wherein:
the first component has an average surface area from about 28 nm 2 to about 1300 nm 2 ;
the second component has an average surface area from about 0.7 nm 2 to about 29 nm 2 ; or
combinations thereof.

15. A process for converting carbon dioxide to a conversion product, comprising:
introducing carbon dioxide to a metal-semiconductor hybrid structure, the metal-semiconductor hybrid structure comprising:
a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and
a second component comprising a metal from Group 7-Group 11, wherein:
the Group 11-Group 14 metal of the first component is the same or different than the Group 7-Group 11 metal of the second component,
an average size of the first component is from about 3 nm to about 20 nm as determined by transmission electron microscopy, and
an average size of the second component is from about 0.5 nm to about 3 nm as determined by transmission electron microscopy.

Assignees

• Honda Motor Co Ltd

Inventors

• Chen Shutang
• Chen Gugang

Classifications

• B01J27/04 Primary

  Sulfides · CPC title

• C07C213/02

  by reactions involving the formation of amino groups from compounds containing hydroxy groups or etherified or esterified hydroxy groups · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B01J23/44

  Palladium · CPC title

• B01J23/52 Primary

  Gold · CPC title