Transparent electrode, device employing the same, and manufacturing method of the device

Patent metadata

Field	Value
Publication number	US-11710797-B2
Application number	US-201815919272-A
Country	US
Kind code	B2
Filing date	Mar 13, 2018
Priority date	Sep 8, 2017
Publication date	Jul 25, 2023
Grant date	Jul 25, 2023

Abstract

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

First claim

The invention claimed is:

1. A transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a transparent metal nanowire layer; and further comprising an auxiliary metal wiring which covers a part of said transparent metal nanowire layer or of said metal oxide layer and which is contacted to said transparent metal nanowire layer and said metal oxide layer,
wherein said metal oxide layer has a larger surface resistance than said transparent metal nanowire layer and metal nanowires in said transparent metal nanowire layer have diameters of 10 to 500 nm and lengths of 0.1 to 50 μm, and
said transparent electrode further comprising a nitrogen-doped graphene layer placed between said metal oxide layer and said transparent metal nanowire layer.

2. The transparent electrode according to claim 1 , wherein said metal oxide layer has continuity.

3. The transparent electrode according to claim 1 , wherein said transparent metal nanowire layer and said auxiliary metal wiring are covered with an insulating layer of polymer or of insulating metal oxide.

4. The transparent electrode according to claim 1 , wherein said metal oxide layer comprises indium-tin complex oxide or aluminum-zinc complex oxide.

5. The transparent electrode according to claim 1 , wherein said transparent metal nanowire layer comprises silver or silver alloys.

6. A device comprising:
the transparent electrode according to claim 1 ,
an active layer, and
a counter electrode.

7. A method for manufacturing said device according to claim 6 , comprising the steps of:
(a) forming an active layer on a counter electrode,
(b) forming, on said active layer, a metal oxide layer having an amorphous structure and electroconductivity, and
(c) forming a metal nanowire layer on said metal oxide layer, and further
(d) forming, before or after said step (c), an auxiliary metal wiring as a current collector which covers a part of said metal nanowire layer or of said metal oxide layer and which is contacted to said metal nanowire layer and said metal oxide layer.

8. The method according to claim 7 , wherein said metal nanowire layer is formed by a transfer process or by a wet-coating process.

9. The method according to claim 7 , wherein said metal oxide layer is formed by a sputtering process.

10. The method according to claim 9 , wherein said sputtering process is carried out at a temperature atmosphere of 150° C. or less.

11. The transparent electrode according to claim 1 , where said metal nanowires in said transparent metal nanowire layer have diameters of 20 to 150 nm.

12. The transparent electrode according to claim 1 , where said metal nanowires in said transparent metal nanowire layer have diameters of 35 to 120 nm.

13. A transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a transparent metal nanowire layer; and further comprising an auxiliary metal wiring as a current collector which covers a part of said transparent metal nanowire layer or of said metal oxide layer and which is contacted to said metal nanowire layer and said metal oxide layer,
said transparent electrode further comprising a nitrogen-doped graphene layer placed between said metal oxide layer and said transparent metal nanowire layer.

14. A transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a transparent metal nanowire layer; and further comprising an auxiliary metal wiring which covers a part of said transparent metal nanowire layer or of said metal oxide layer and which is contacted to said transparent metal nanowire layer and said metal oxide layer,
wherein said metal oxide layer has a larger surface resistance than said transparent metal nanowire layer.

15. A transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring which covers a part of said metal nanowire layer or of said metal oxide layer and which is contacted to said metal nanowire layer and said metal oxide layer,
wherein said metal oxide layer has a larger surface resistance than said metal nanowire layer.

Assignees

• Toshiba Kk

Inventors

• Naito Katsuyuki
• Shida Naomi
• Saito Mitsunaga
• Niimoto Takeshi

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title

• H10F77/334

  for shielding light, e.g. light blocking layers or cold shields for infrared detectors · CPC title

• H10F77/251

  comprising zinc oxide [ZnO] · CPC title

• H10F77/247

  comprising indium tin oxide [ITO] · CPC title