Process for Production of Poly(Arylene Sulfide)
US-2015376339-A1 · Dec 31, 2015 · US
US9304635B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9304635-B2 |
| Application number | US-201313944428-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 17, 2013 |
| Priority date | Aug 9, 2012 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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A conductive film includes an elongated film base, a first conductive layer, a second conductive layer and a third conductive layer in this order. The elongated film base has a longitudinal direction and a width direction orthogonal to the longitudinal direction. The width direction dimension of the elongated film base is greater than or equal to 1 m. The first conductive layer is an indium-based oxide layer. The second conductive layer is a metal layer. The third conductive layer is an oxidized metal layer having a thickness of 1 nm to 15 nm formed by sputter deposition.
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What is claimed is: 1. A conductive film comprising: an elongated film base, a first conductive layer, a second conductive layer and a third conductive layer in this order, the elongated film base having a longitudinal direction and a width direction orthogonal to the longitudinal direction, the width direction dimension of the elongated film base is greater than or equal to 1 m, the first conductive layer being an indium-based oxide layer, the second conductive layer being a metal layer, the third conductive layer being an oxidized metal layer having a thickness of 1 nm to 15nm formed by sputter deposition, wherein a surface resistance value is 0.1Ω/□ to 0.6Ω/□, and a standard deviation of a surface resistance value in the with direction is less than or equal to 0.01Ω/□. 2. The conductive film according to claim 1 , wherein the width direction dimension of the elongated film base is 1m to 3m. 3. The conductive film according to claim 1 , wherein a surface resistance value is 0.3Ω/□ to 0.6Ω/□. 4. The conductive film according to claim 1 , wherein the standard deviation of a surface resistance value in the width direction is 0.001 to 0.005Ω/□. 5. The conductive film according to claim 1 , wherein the third conductive layer is made of one of a copper oxide, a silver oxide, a silver oxide alloy and a titanium oxide alloy. 6. The conductive film according to claim 1 , wherein the second conductive layer is made of one of copper, silver, a silver alloy and a titanium alloy. 7. The conductive film according to claim 6 , wherein the second conductive layer has a thickness of 20 nm to 700 nm. 8. The conductive film according to claim 1 , wherein the first conductive layer is made of one of an indium tin oxide, an indium zinc oxide and a composite of indium oxide and zinc oxide. 9. The conductive film according to claim 8 , wherein the first conductive layer has a thickness of 20 nm to 80 nm. 10. The conductive film according to claim 1 , wherein the elongated film base has a thickness of 80 μm to 200 μm. 11. The conductive film according to claim 10 , wherein the elongated film base is made of polycycloolefin.
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