Preparation of a quartz glass body in a multi-chamber oven

Patent metadata

Field	Value
Publication number	US-11708290-B2
Application number	US-202016984379-A
Country	US
Kind code	B2
Filing date	Aug 4, 2020
Priority date	Dec 18, 2015
Publication date	Jul 25, 2023
Grant date	Jul 25, 2023

Abstract

One aspect relates to a process for the preparation of a quartz glass body, including providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate has a BET surface area in a range from 20 to 40 m 2 /g, making a glass melt out of silicon dioxide granulate in an oven and making a quartz glass body out of at least part of the glass melt. The oven has at least a first and a further chamber connected to one another via a passage. The temperature in the first chamber is lower than the temperature in the further chambers. On aspect relates to a quartz glass body which is obtainable by this process. One aspect relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

First claim

The invention claimed is:

1. A process for the preparation of a quartz glass body comprising:
providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate comprises a BET surface area in a range from 20 to 40 m2/g;
making a glass melt out of the silicon dioxide granulate in an oven; and
making a quartz glass body out of at least part of the glass melt;
wherein the oven has at least a first and a further chamber connected to one another by a passage;
wherein the first and further chambers are at different temperatures;
wherein the temperature in the first chamber is in a range of 1200 to 1800° C. lower than the temperature in the further chamber; and
wherein the temperature in the further chamber is in a range from 1900 to 2400° C.

2. The process according to claim 1 , wherein there is an additive in the first chamber selected from the group consisting of halogens, inert gas, base, oxygen or a combination of two or more of them.

3. The process according to claim 2 , wherein the halogen is selected from the group consisting of chlorine, fluorine, compounds containing chlorine, compounds containing fluorine and a combination of two or more thereof, and wherein the inert gas is selected from the group consisting of nitrogen, helium and a combination of the two.

4. The process according to claim 1 , wherein the silicon dioxide granulate comprises at least one of:
a mean particle size in a range from 50 to 500 μm
a bulk density in a range from 0.5 to 1.2 g/cm3;
a carbon content of less than 10 ppm;
an aluminium content of less than 200 ppb;
a tamped density in a range from 0.7 to 1.2 g/cm3;
a pore volume in a range from 0.1 to 2.5 mL/g;
an angle of repose in a range from 23 to 26°
a particle size distribution D10 in a range from 50 to 150 μm;
a particle size distribution D50 in a range from 150 to 300 μm; and
a particle size distribution D90 in a range from 250 to 620 μm;
wherein the ppm and ppb are each based on the total weight of the silicon dioxide powder.

5. The process according to claim 1 , wherein the silicon dioxide is transported from the first to the further chamber as granulate.

6. The process according to claim 1 , wherein the first chamber comprises at least one element selected from the group consisting of quartz glass, a refractory metal, aluminium and a combination of two or more of them.

7. The process according to claim 1 , wherein the further chamber is a crucible of a metal sheet or a sinter material containing a sinter metal, wherein the metal sheet or the sinter metal is selected from the group consisting of molybdenum, tungsten and a combination of them.

8. The process according to claim 1 , wherein the BET surface area before making a glass melt out of the silicon dioxide granulate in an oven is not reduced to less than 5 m2/g.

9. The process according to claim 1 , wherein melt energy is transmitted to the silicon dioxide granulate via a solid surface.

10. The process according to claim 1 , wherein hydrogen, helium, nitrogen or a combination of two or more of them is present in the gas space of the oven.

11. The process according to claim 1 , wherein providing the silicon dioxide granulate comprises:
providing silicon dioxide powder comprising:
a BET surface area in a range from 20 to 60 m2/g; and
a bulk density in a range from 0.01 to 0.3 g/cm3;

processing the silicon dioxide powder to obtain a silicon dioxide granulate;
wherein the silicon dioxide granulate has a larger particle size than the silicon dioxide powder.

12. The process according to claim 11 , wherein the provided silicon dioxide powder comprises at least one of:
a carbon content of less than 50 ppm
a chlorine content of less than 200 ppm;
an aluminium content of less than 200 ppb;
a total content of metals which are different from aluminium of less than 5 ppm;
at least 70 wt.-% of the powder particles have a primary particle size in a range from 10 to 100 nm;
a tamped density in a range from 0.001 to 1.3 g/cm3;
a residual moisture content of less than 5 wt.-%;
a particle size distribution D10 in the range from 1 to 7 μm;
a particle size distribution D50 in the range from 6 to 15 μm; and
a particle size distribution D90 in the range from 10 to 40 μm;
wherein the wt.-%, the ppm and the ppb are each based on the total weight of the silicon dioxide powder.

13. The process according to claim 10 , wherein the silicon dioxide powder is made from an element selected from the group consisting of siloxanes, silicon alkoxides and silicon halides.

14. The process according to claim 10 , further comprising forming a hollow body with at least one opening from the quartz glass body.

15. The process according to claim 1 , wherein the silicon dioxide granulate is transported from the first to the further chamber as granulate, wherein the glass melt is formed in the further chamber, and wherein the silicon dioxide granulate is introduced continuously into the oven and the glass melt is removed continuously from the oven.

16. The process according to claim 1 , wherein the silicon dioxide granulate is subjected to a dynamic thermal treatment in the first chamber at an oven temperature of at least 500° C.

17. A process for the preparation of a light guide comprising:
providing a quartz glass body according to the process of claim 1 ;
process the quartz glass body to obtain a hollow body with at least two openings;
introduce one or multiple core rods into the quartz glass body through one of the at least two openings to obtain a precursor; and
drawing the precursor in the warm to obtain the light guide with one or multiple cores and a jacket.

18. A process for the preparation of an illuminant comprising:
providing a quartz glass body according to the process of claim 1 ;
processing the quartz glass body to obtain a hollow body;
fitting the hollow body with electrodes; and
filling the hollow body with a gas.

19. A process for the preparation of a quartz glass body comprising:
providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate comprises a BET surface area in a range from 20 to 40 m2/g;
making a glass melt out of the silicon dioxide granulate in an oven; and
making a quartz glass body out of at least part of the glass melt;
wherein the oven has at least a first and a further chamber connected to one another by a passage;
wherein the first and further chambers are at different temperatures; and

wherein the temperature in the first chamber is in a range of 1200 to 1800° C. lower than the temperature in the further chamber; and
wherein in the first chamber there is a pressure of less than 500 mbar.

Assignees

• Heraeus Quarzglas

Inventors

• Otter Matthias
• Lehmann Walter
• Hünermann Michael
• Nielsen Nils Christian
• Whippey Nigel Robert
• Gromann Boris
• Kpebane Abdoul-Gafar
• Söhn Matthias

Classifications

• C03B20/00 Primary

  Processes specially adapted for the production of quartz or fused silica articles {, not otherwise provided for (C03B19/01, C03B19/066, C03B19/106, C03B19/12, C03B19/14, C03B37/00 take precedence)} · CPC title

• C03B17/04

  Forming tubes or rods by drawing from stationary or rotating tools or from forming nozzles · CPC title

• C03B19/106

  by chemical vapour deposition; by liquid phase reaction · CPC title

• C03B19/1095

  Thermal after-treatment of beads, e.g. tempering, crystallisation, annealing · CPC title

• C03B37/01211

  by inserting one or more rods or tubes into a tube · CPC title