Si-containing film forming precursors and methods of using the same

Patent metadata

Field	Value
Publication number	US-11699584-B2
Application number	US-202117197895-A
Country	US
Kind code	B2
Filing date	Mar 10, 2021
Priority date	Mar 30, 2015
Publication date	Jul 11, 2023
Grant date	Jul 11, 2023

Abstract

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

First claim

What is claimed is:

1. An atomic layer deposition (ALD) silicon metal oxide film formation process, the process comprising depositing a silicon metal oxide film on a substrate by the steps of:
a) a step of sequentially introducing a vapor of a mono-substituted trisilylamine (TSA) precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X,
wherein X is selected from (i) a halogen atom selected from Cl, Br or I; (ii) an isocyanato group [—NCO]; (iii) an amino group [—NR 1 R 2 ]; (iv) an N-containing C 4 -C 10 saturated or unsaturated heterocycle; or (v) an alkoxy group [—O—R], and
wherein R 1 , R 2 and R each is selected from (x) H; (y) a C 1 -C 6 linear or branched, saturated or unsaturated hydrocarbyl group; or (z) a silyl group [SiR′ 3 ] with each R′ being independently selected from H; a halogen atom selected from Cl, Br, I; a Ci-C 4 saturated or unsaturated hydrocarbyl group; a C 1 -C 4 saturated or unsaturated alkoxy group; or an amino group [—NR 3 R 4 ] with each R 3 and R 4 being selected from H or a C 1 -C 6 linear or branched, saturated or unsaturated hydrocarbyl group; and
further provided that if R 1 ═H, then R 2 ≠H or Me, and

b) a step of introducing a vapor of a metal containing second precursor.

2. The ALD silicon metal oxide film formation process of claim 1 , wherein the oxygen-containing reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , N 2 O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.

3. The ALD silicon metal oxide film formation process of claim 2 , wherein the oxygen-containing reactant is plasma O 2 .

4. The ALD silicon metal oxide film formation process of claim 1 , wherein X is Cl, Br, or I.

5. The ALD silicon metal oxide film formation process of claim 2 , wherein X is Cl, Br, or I.

6. The ALD silicon metal oxide film formation process of claim 3 , wherein X is Cl, Br, or I.

7. The ALD silicon metal oxide film formation process of claim 1 , wherein X is Cl.

8. The ALD silicon metal oxide film formation process of claim 2 , wherein X is Cl.

9. The ALD silicon metal oxide film formation process of claim 3 , wherein X is Cl.

10. The ALD silicon metal oxide film formation process of claim 1 , wherein X is wherein X is NiPr 2 or NEt 2 .

11. The ALD silicon metal oxide film formation process of claim 2 , wherein X is wherein X is NiPr 2 or NEt 2 .

12. The ALD silicon metal oxide film formation process of claim 3 , wherein X is wherein X is NiPr 2 or NEt 2 .

13. The ALD silicon metal oxide film formation process of claim 1 , wherein the metal of the second precursor is selected from the group consisting of group 2, group 13, group 14, transition metal, lanthanides, and combinations thereof.

14. The ALD silicon metal oxide film formation process of claim 2 , wherein the metal of the second precursor is selected from the group consisting of group 2, group 13, group 14, transition metal, lanthanides, and combinations thereof.

15. The ALD silicon metal oxide film formation process of claim 3 , wherein the metal of the second precursor is selected from the group consisting of group 2, group 13, group 14, transition metal, lanthanides, and combinations thereof.

16. The ALD silicon metal oxide film formation process of claim 1 , wherein the metal of the second precursor is selected from the group consisting of Ti, Hf, Zr, Ta, Nb, V, Al, Sr, Y, Ba, Ca, As, B, P, Sb, Bi, Sn, Ge, and combinations thereof.

17. The ALD silicon metal oxide film formation process of claim 2 , wherein the metal of the second precursor is selected from the group consisting of Ti, Hf, Zr, Ta, Nb, V, Al, Sr, Y, Ba, Ca, As, B, P, Sb, Bi, Sn, Ge, and combinations thereof.

18. The ALD silicon metal oxide film formation process of claim 3 , wherein the metal of the second precursor is selected from the group consisting of Ti, Hf, Zr, Ta, Nb, V, Al, Sr, Y, Ba, Ca, As, B, P, Sb, Bi, Sn, Ge, and combinations thereof.

Assignees

• Air Liquide
• Lair Liquide Sa Pour Ledute Ed Lexploitation Des Procedes Georges Claude

Inventors

• Girard Jean-Marc
• Zhang Peng
• Sanchez Antonio
• Khandelwal Manish
• Itov Gennadiy
• Pesaresi Reno

Classifications

• C01B21/088

  containing also one or more halogen atoms · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H01L21/02222

  Electricity · mapped topic