Semiconductor device
US-10141304-B2 · Nov 27, 2018 · US
Power diode and method of manufacturing a power diode
US11695083B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11695083-B2 |
| Application number | US-202117204698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 17, 2021 |
| Priority date | Aug 18, 2017 |
| Publication date | Jul 4, 2023 |
| Grant date | Jul 4, 2023 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body; and forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region. Power diodes manufactured by the method are also described.
First claim
Opening claim text (preview).
What is claimed is: 1. A power diode, comprising: a semiconductor body having an anode region and a drift region, the semiconductor body being coupled to an anode metallization of the power diode and to a cathode metallization of the power diode; and an anode contact zone and an anode damage zone, both implemented in the anode region, the anode contact zone being arranged in contact with the anode metallization, and the anode damage zone being arranged in contact with and below the anode contact zone, wherein the anode damage zone extends into the anode region along a vertical direction no further than down to an extension level of 75 nm, measured from a surface of the semiconductor body. 2. The power diode of claim 1 , wherein the anode region extends into the semiconductor body along the vertical direction for at least 2 μm. 3. The power diode of claim 1 , wherein a distance between a peak electric field during a blocking state of the power diode and a lower termination of the anode damage zone is at least 250 nm. 4. The power diode of claim 1 , wherein a space charge region does not extend into the anode damage zone. 5. The power diode of claim 1 , wherein the semiconductor body further comprises a cathode contact region, wherein the drift region is coupled to the cathode metallization by the cathode contact region. 6. The power diode of claim 1 , wherein the anode region further comprises an anode body zone disposed below the anode damage zone. 7. The power diode of claim 6 , wherein the anode body zone has a total extension in the vertical direction of between 200 nm and 700 nm. 8. The power diode of claim 7 , wherein the anode region further comprises an anode field stop zone, wherein the anode field stop zone forms a termination of the anode region, or wherein the anode field stop zone is disposed between two of the anode body zones. 9. The power diode of claim 8 , wherein the anode field stop zone is spaced apart from the anode damage zone by at least 250 nm in the vertical direction. 10. The power diode of claim 9 , wherein a distance between a peak electric field during a blocking state of the power diode and a lower termination of the anode damage zone is at least 250 nm.
Assignees
Inventors
Classifications
of a molecular ion, e.g. decaborane · CPC title
into Group IV semiconductors · CPC title
of electrically active species · CPC title
- H10D8/00Primary
Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title
into semiconductor materials, e.g. for doping · CPC title
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Frequently asked questions
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- What does patent US11695083B2 cover?
- A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body; and forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region. Power diodes manufactured by the method are also described.
- Who is the assignee on this patent?
- Infineon Technologies Austria Ag
- What technology area does this patent fall under?
- Primary CPC classification H10D8/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 04 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).