Field effect-transistor, method for manufacturing same, wireless communication device using same, and product tag

Patent metadata

Field	Value
Publication number	US-11690237-B2
Application number	US-201816630759-A
Country	US
Kind code	B2
Filing date	Sep 25, 2018
Priority date	Sep 29, 2017
Publication date	Jun 27, 2023
Grant date	Jun 27, 2023

Abstract

A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

First claim

The invention claimed is:

1. A field-effect transistor, comprising at least:
a substrate; a source electrode;
a drain electrode;
a gate electrode;
a semiconductor layer in contact with said source electrode and with said drain electrode; and
a gate insulating layer insulating between said semiconductor layer and said gate electrode;
wherein said semiconductor layer contains a carbon nanotube, and
wherein said gate insulating layer contains inorganic particles treated with a polysiloxane that has at least a structural unit represent by formula (1)

wherein, in formula (1),
R 1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group;
R 2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group;
m represents 0 or 1; and
A 1 represents an organic group including at least two groups selected from a carboxyl group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups, wherein, when said derivative is a cyclic condensed structure formed by two of said carboxyl group, said sulfo group, said thiol group, and said phenolic hydroxy group, A 1 represents an organic group having at least one said cyclic condensed structure;
the treatment resulting in the inorganic particles and polysiloxane being bonded together.

2. The field-effect transistor according to claim 1 , wherein said gate insulating layer has a relative dielectric constant within the range of at least 5 and up to 20.

3. The field-effect transistor according to claim 1 , wherein said carbon nanotube includes a carbon nanotube composite having a conjugated polymer attached to at least part of the surface of said carbon nanotube.

4. The field-effect transistor according to claim 1 , wherein said inorganic particles include a metal oxide.

5. The field-effect transistor according to claim 1 , wherein said inorganic particles have a number-average particle size in the range of at least 1 nm and up to 100 nm.

6. The field-effect transistor according to claim 1 , wherein the inorganic particles in said gate insulating layer have a volume fraction in the range of at least 10 vol % and up to 60 vol %.

7. The field-effect transistor according to claim 1 , wherein said gate insulating layer has a thickness in the range of at least 10 nm and up to 1000 nm.

8. The field-effect transistor according to claim 1 , wherein said source electrode and/or said drain electrode include(s) an organic binder and an electric conductive powder.

9. The field-effect transistor according to claim 1 , wherein said field-effect transistor has an on-current of at least 5 μA and a leak current of up to 50 pA.

10. A method for producing the field-effect transistor according to claim 1 , the method comprising the steps of:
(1) forming, on a substrate, an electric conductive pattern serving as a gate electrode;
(2) applying a solution including at least a polymer having inorganic particles bound thereto onto said substrate having said electric conductive pattern formed thereon, followed by drying said solution, to obtain a coating film; and
(3) forming, on said coating film or a gate insulating layer formed by curing said coating film, a semiconductor layer including a carbon nanotube and an electric conductive pattern serving as a source electrode and a drain electrode, in such a manner that said semiconductor layer and said electric conductive pattern are in contact with each other.

11. A wireless communication device comprising the field-effect transistor according to claim 1 .

12. A goods tag comprising the wireless communication device according to claim 11 .

13. A field-effect transistor, comprising at least:
a substrate; a source electrode;
a drain electrode;
a gate electrode;
a semiconductor layer in contact with said source electrode and with said drain electrode; and
a gate insulating layer that insulates between said semiconductor layer and said gate electrode;
wherein said semiconductor layer contains carbon nanotubes, and
wherein said gate insulating layer contains a polymer having inorganic particles bound thereto, and
wherein the gate insulating layer has an opening on the gate electrode.

14. A method for producing the field-effect transistor according to claim 13 , the method comprising the steps of:
(1) forming, on a substrate, an electric conductive pattern serving as a gate electrode;
(2) applying a solution including at least a polymer having inorganic particles bound thereto and a photosensitive organic component onto said substrate having said electric conductive pattern formed thereon, followed by drying said solution, to obtain a coating film;
(3) forming, on said coating film or a gate insulating layer formed by curing said coating film, a semiconductor layer including a carbon nanotube and an electric conductive pattern serving as a source electrode and a drain electrode, in such a manner that said semiconductor layer and said electric conductive pattern are in contact with each other;
(4) irradiating a film with active actinic light via a photomask, said film being obtained by applying, onto said substrate having said electric conductive pattern formed thereon, said solution including said polymer having inorganic particles bound thereto and said photosensitive organic component, and by drying said film; and forming, on said electric conductive pattern, an insulating pattern having an opening, using an alkali solution; and
(5) heating said insulating pattern to form said gate insulating layer having an opening.

Assignees

• Toray Industries

Inventors

• Sakii Daisuke
• Murase Seiichiro
• Wakita Junji

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• C08G77/58 Primary

  Metal-containing linkages · CPC title

• H01L29/78696

  Electricity · mapped topic

• C08G77/14

  containing silicon bound to oxygen-containing groups · CPC title

• C08G77/28

  sulfur-containing groups · CPC title