Insulating ink and insulator and thin film transistor and electronic device

Patent metadata

Field	Value
Publication number	US-2016347969-A1
Application number	US-201514919116-A
Country	US
Kind code	A1
Filing date	Oct 21, 2015
Priority date	May 29, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

First claim

What is claimed is:

1 . An insulating ink, comprising:
a nanoparticle bonded with a substituent having a polymerizable functional group; at least one of an organosilane compound and polyorganosiloxane; and a solvent.

2 . The insulating ink of claim 1 , wherein the nanoparticle is represented by Chemical Formula 1:
ML−A) n   [Chemical Formula 1]
wherein, in Chemical Formula 1, M is a nanoparticle, L is one of a single bond, a substituted or unsubstituted C 1 to C 20 alkylene group, a substituted or unsubstituted C 6 to C 30 arylene group, a substituted or unsubstituted C 3 to C 30 bivalent heterocyclic group, a substituted or unsubstituted C 1 to C 20 bivalent silyl group, a substituted or unsubstituted bivalent siloxane group, and a combination thereof, A is a polymerizable functional group, and n is an integer of 1 or more.

3 . The insulating ink of claim 1 , wherein the polymerizable functional group is one of a (meth)acrylate group, an epoxy group, a styrene group, an acrylonitrile group, an N-vinylpyrrolidone group, a vinyl group, a derivative thereof, and a combination thereof.

4 . The insulating ink of claim 1 , wherein the organosilane compound and the polyorganosiloxane have at least one reactive functional group.

5 . The insulating ink of claim 4 , wherein the at least one reactive functional group includes one of a substituted or unsubstituted C 2 to C 30 alkenyl group, a substituted or unsubstituted C 1 to C 30 epoxy group, and a combination thereof.

6 . The insulating ink of claim 1 , wherein the organosilane compound is represented by one of Chemical Formulae 2 to 5:
R 1 R 2 R 3 SiZ 1   [Chemical Formula 2]
R 4 R 5 SiZ 2 Z 3   [Chemical Formula 3]
R 6 SiZ 4 Z 5 Z 6   [Chemical Formula 4]
SiZ 7 Z 8 Z 9 Z 10   [Chemical Formula 5]
wherein, in Chemical Formulae 2 to 5, each of R 1 to R 6 are independently one of hydrogen, a substituted or unsubstituted C 1 to C 30 alkyl group, a substituted or unsubstituted C 3 to C 30 cycloalkyl group, a substituted or unsubstituted C 6 to C 30 aryl group, a substituted or unsubstituted C7 to C 30 arylalkyl group, a substituted or unsubstituted C 1 to C 30 heteroalkyl group, a substituted or unsubstituted C 2 to C 30 heterocycloalkyl group, a substituted or unsubstituted C 2 to C 30 alkenyl group, a substituted or unsubstituted C 2 to C 30 alkynyl group, a substituted or unsubstituted C 1 to C 30 alkoxy group, a substituted or unsubstituted C 1 to C 30 epoxy group, a substituted or unsubstituted C 1 to C 30 carbonyl group, a hydroxy group, and a combination thereof, and each of Z 1 to Z 10 are independently one of a substituted or unsubstituted C 1 to C 6 alkoxy group, a halogen, a carboxyl group, and a combination thereof.

7 . The insulating ink of claim 6 , wherein at least one of R 1 to R 6 of Chemical Formulae 2 to 5 includes one of a substituted or unsubstituted C 2 to C 30 alkenyl group, a substituted or unsubstituted C 1 to C 30 epoxy group, and a combination thereof.

8 . The insulating ink of claim 1 , wherein the polyorganosiloxane comprises a structure represented by Chemical Formula 6:
(R 1 R 2 R 3 SiO 1/2 ) M1 (R 4 R 5 SiO 2/2 ) D1 (R 6 SiO 3/2 ) T1 (SiO 4/2 ) Q1   [Chemical Formula 6]
wherein, in Chemical Formula 6, each of R 1 to R 6 are independently one of hydrogen, a substituted or unsubstituted C 1 to C 30 alkyl group, a substituted or unsubstituted C 3 to C 30 cycloalkyl group, a substituted or unsubstituted C 6 to C 30 aryl group, a substituted or unsubstituted C7 to C 30 arylalkyl group, a substituted or unsubstituted C 1 to C 30 heteroalkyl group, a substituted or unsubstituted C 2 to C 30 heterocycloalkyl group, a substituted or unsubstituted C 2 to C 30 alkenyl group, a substituted or unsubstituted C 2 to C 30 alkynyl group, a substituted or unsubstituted C 1 to C 30 alkoxy group, a substituted or unsubstituted C 1 to C 30 epoxy group, a substituted or unsubstituted C 1 to C 30 carbonyl group, a hydroxy group, and a combination thereof, 0≦M1<1, 0≦D1<1, 0≦T1<1, 0≦Q1<1, and M+D+T+Q=1.

9 . The insulating ink of claim 8 , wherein at least one of R 1 to R 6 of Chemical Formula 6 includes one of a substituted or unsubstituted C 2 to C 30 alkenyl group, a substituted or unsubstituted C 1 to C 30 epoxy group, and a combination thereof.

10 . The insulating ink of claim 8 , wherein at least one of R 4 to R 6 of Chemical Formula 6 includes one of a substituted or unsubstituted C 2 to C 30 alkenyl group, a substituted or unsubstituted C 1 to C 30 epoxy group, and a combination thereof.

11 . The insulating ink of claim 1 , wherein the nanoparticle includes a metal oxide.

12 . The insulating ink of claim 11 , wherein the nanoparticle includes one of silica, titania, barium titanate, zirconia, barium sulfate, alumina, hafnium oxide, and a combination thereof.

13 . The insulating ink of claim 1 , wherein the nanoparticle is present in an amount of about 2 to about 70 parts by weight based on 100 parts by weight of the at least one of the organosilane compound and the polyorganosiloxane.

14 . The insulating ink of claim 1 , further comprising:
at least one of a cross-linking agent and a cross-linking auxiliary agent.

15 . The insulating ink of claim 14 , wherein
the cross-linking agent is one of a (meth)acrylate compound and an ether compound, and the cross-linking auxiliary agent is an organometal compound.

16 . The insulating ink of claim 1 , further comprising:
at least one of a photoinitiator, a photoacid generator, and a dispersing agent.

17 . An insulator including a cured product of the insulating ink of claim 1 .

18 . A thin film transistor comprising:
a gate electrode; a semiconductor overlapping the gate electrode; the insulator of claim 17 between the gate electrode and the semiconductor; and a source electrode and a drain electrode electrically connected with the semiconductor.

19 . The thin film transistor of claim 18 , wherein the semiconductor is an organic semiconductor.

20 . An electronic device comprising the thin film transistor of claim 18 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Eun Kyung
• Jung Jiyoung
• Yun Youngjun
• Park Jeong Ii
• Choi Ajeong

Classifications

• C09D11/00

  Inks · CPC title

• C09D183/06 Primary

  containing silicon bound to oxygen-containing groups (C09D183/12 takes precedence) · CPC title

• H01L51/0545

  Electricity · mapped topic

• H01L51/0537

  Electricity · mapped topic

• H01L2251/303

  Electricity · mapped topic