Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

US11688653B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11688653-B2
Application numberUS-202017017404-A
CountryUS
Kind codeB2
Filing dateSep 10, 2020
Priority dateMar 6, 2020
Publication dateJun 27, 2023
Grant dateJun 27, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

In one embodiment, a semiconductor manufacturing apparatus includes a polisher configured to polish a film provided on a substrate. The apparatus further includes a thickness measurement module configured to measure a thickness of the film while the substrate is being conveyed before the polishing. The apparatus further includes a controller configured to control the polishing of the film by the polisher based on the thickness measured by the thickness measurement module.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor manufacturing apparatus comprising: a polisher configured to polish a film provided on a substrate; a thickness measurement module configured to measure a thickness of the film while the substrate is being conveyed before the polishing; and a controller configured to control the polishing of the film by the polisher based on the thickness measured by the thickness measurement module. 2. The apparatus of claim 1 , wherein the thickness measurement module measures the thickness at a plurality of portions of the film. 3. The apparatus of claim 1 , wherein the controller sets a polishing condition in which the polisher polishes the film, based on the thickness measured by the thickness measurement module. 4. The apparatus of claim 1 , further comprising a conveyance module configured to hold and convey the substrate, wherein the thickness measurement module is provided in the conveyance module. 5. The apparatus of claim 4 , wherein the conveyance module includes a first member positioned under the substrate during the conveyance of the substrate, and the thickness measurement module is provided in the first member. 6. The apparatus of claim 4 , wherein the conveyance module includes a second member positioned above the substrate during the conveyance of the substrate, and the thickness measurement module is provided in the second member. 7. The apparatus of claim 1 , wherein the thickness measurement module measures the thickness while the substrate is moving. 8. The apparatus of claim 1 , wherein the thickness measurement module measures the thickness when the substrate passes through a predetermined point in the semiconductor manufacturing apparatus. 9. The apparatus of claim 1 , further comprising a transporter configured to transport the substrate in a polishing chamber provided with the polisher, wherein the thickness measurement module is provided in the transporter. 10. The apparatus of claim 1 , further comprising a reversing module configured to reverse orientations of a first face and a second face of the substrate, wherein the thickness measurement module is provided in the reversing module. 11. The apparatus of claim 2 , wherein the polisher includes an airbag that presses the substrate against a polishing pad, and the thickness measurement module measures the thickness at the plurality of portions, a number of the portions being equal to or greater than a number of airbag zones of the airbag. 12. A method of manufacturing a semiconductor device, comprising: measuring a thickness of a film provided on a substrate by a thickness measurement module while the substrate is being conveyed before polishing by a polisher; polishing the film by the polisher; and controlling, by a controller, the polishing of the film by the polisher based on the thickness measured by the thickness measurement module. 13. The method of claim 12 , wherein the thickness measurement module measures the thickness at a plurality of portions of the film. 14. The method of claim 12 , wherein the controller sets a polishing condition in which the polisher polishes the film, based on the thickness measured by the thickness measurement module. 15. The method of claim 12 , further comprising holding and conveying the substrate by a conveyance module, wherein the thickness measurement module is provided in the conveyance module. 16. The method of claim 13 , wherein the polisher includes an airbag that presses the substrate against a polishing pad, and the thickness measurement module measures the thickness at the plurality of portions, a number of the portions being equal to or greater than a number of airbag zones of the airbag. 17. A semiconductor manufacturing apparatus comprising: a processing module configured to process a film provided on a substrate; a thickness measurement module configured to measure a thickness of the film while the substrate is being conveyed before the processing; and a controller configured to control the processing of the film by the processing module based on the thickness measured by the thickness measurement module. 18. The apparatus of claim 17 , wherein the processing of the film is polishing or etching of the film. 19. A method of manufacturing a semiconductor device, comprising: measuring a thickness of a film provided on a substrate by a thickness measurement module while the substrate is being conveyed before processing by a processing module; processing the film by the processing module; and controlling, by a controller, the processing of the film by the processing module based on the thickness measured by the thickness measurement module. 20. The method of claim 19 , wherein the processing of the film is polishing or etching of the film.

Assignees

Inventors

Classifications

  • of semiconductor materials · CPC title

  • H10P74/238Primary

    comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

  • Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

  • characterised by multiple measurements, corrections, marking or sorting processes · CPC title

  • B24B37/013Primary

    Devices or means for detecting lapping completion · CPC title

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What does patent US11688653B2 cover?
In one embodiment, a semiconductor manufacturing apparatus includes a polisher configured to polish a film provided on a substrate. The apparatus further includes a thickness measurement module configured to measure a thickness of the film while the substrate is being conveyed before the polishing. The apparatus further includes a controller configured to control the polishing of the film by th…
Who is the assignee on this patent?
Kioxia Corp
What technology area does this patent fall under?
Primary CPC classification H10P74/238. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 27 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).