Method for manufacturing monocrystalline graphene

Patent metadata

Field	Value
Publication number	US-11685656-B2
Application number	US-202117395984-A
Country	US
Kind code	B2
Filing date	Aug 6, 2021
Priority date	Aug 7, 2020
Publication date	Jun 27, 2023
Grant date	Jun 27, 2023

Abstract

A method for manufacturing monocrystalline graphene, includes supplying an aromatic carbon gas onto a single-crystalline metal catalyst to manufacture the monocrystalline graphene.

First claim

What is claimed is:

1. A method for manufacturing a monocrystalline graphene, the method comprising:
supplying an aromatic carbon gas to a single-crystalline metal catalyst placed in a process chamber for a desired growth time to grow the monocrystalline graphene,
wherein a temperature in the process chamber is maintained at 100 degrees Celsius or less without an additional heat supply until the manufacturing of the monocrystalline graphene is completed.

2. The method of claim 1 , wherein the single-crystalline metal catalyst has a (111) plane of a metal exposed on a surface thereof.

3. The method of claim 2 , wherein the monocrystalline graphene is grown by growing graphene on the (111) plane.

4. The method of claim 1 , further comprising:
removing oxides on a surface of the single-crystalline metal catalyst using a chemical solution before supplying the aromatic carbon gas.

5. The method of claim 1 , further comprising:
removing oxides on a surface of the single-crystalline metal catalyst by a plasma treatment, a light treatment, or a heat treatment before supplying the aromatic carbon gas.

6. The method of claim 1 , wherein the supplying of the aromatic carbon gas to the single-crystalline metal catalyst is performed at 50° C. or lower.

7. The method of claim 1 , wherein the supplying of the aromatic carbon gas to the single-crystalline metal catalyst is performed at 30° C. or lower.

8. The method of claim 1 , wherein the supplying of the aromatic carbon gas to the single-crystalline metal catalyst is performed at room temperature without an additional heat supply.

9. The method of claim 1 , wherein the supplying of the aromatic carbon gas to the single-crystalline metal catalyst is performed in a vacuum state.

10. The method of claim 1 , wherein the single-crystalline metal catalyst includes a metal selected from the group consisting of Cu, Ni, Sc, Ti, V, Cr, Mn, Fe, Co, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg, Cn, and combinations thereof.

11. The method of claim 1 , wherein the supplying of the aromatic carbon gas to the single-crystalline metal catalyst is performed by an organometallic chemical vapor deposition process.

12. The method of claim 1 , further comprising converting a polycrystalline metal catalyst to the single-crystalline metal catalyst by heat-treating the polycrystalline metal catalyst.

13. The method of claim 1 , wherein the aromatic carbon gas includes one selected from the group consisting of substitutable benzene, toluene, xylene, naphthalene, anthracene, benzopyrene, and combinations thereof.

Assignees

• Research & Business Found Sungkyunkwan Univ

Inventors

• Choi Jae-Young
• Kim Bum Jun

Classifications

• B01J2235/00

  Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

• B01J35/70

  characterised by their crystalline properties, e.g. semi-crystalline (catalysts comprising carbon B01J21/18; molecular sieves B01J29/00) · CPC title

• C01P2002/82

  by IR- or Raman-data · CPC title

• C01P2002/70

  defined by measured X-ray, neutron or electron diffraction data · CPC title

• C01B32/186 Primary

  by chemical vapour deposition [CVD] · CPC title