Silicon-based modulator with optimized doping profile

Patent metadata

Field	Value
Publication number	US-11681168-B2
Application number	US-202217734427-A
Country	US
Kind code	B2
Filing date	May 2, 2022
Priority date	Jan 26, 2018
Publication date	Jun 20, 2023
Grant date	Jun 20, 2023

Abstract

A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide including a contact region and a core region, wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable.

First claim

What is claimed is:

1. A silicon-based modulator comprising:
a waveguide including a contact region and a core region,
wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable, wherein the core region is weakly doped relative to the transition zone and includes no variable doping therein.

2. The silicon-based modulator of claim 1 , wherein the doping profile is an exponential curve.

3. The silicon-based modulator of claim 1 , wherein the doping profile includes a non-linear transition from the contact region to the core region.

4. The silicon-based modulator of claim 1 , wherein the waveguide further includes
a first region adjacent to the contact region in a lateral direction within the waveguide; and
a second region adjacent to the core region in the lateral direction within the waveguide,
wherein the doping profile decreases faster in the first region than in the second region.

5. The silicon-based modulator of claim 1 , wherein the transition zone includes a same thickness between the contact region and the core region.

6. The silicon-based modulator of claim 1 , wherein the transition zone includes a different thickness between the contact region and the core region.

7. The silicon-based modulator of claim 6 , wherein the different thickness is varied in discrete levels.

8. The silicon-based modulator of claim 6 , wherein the different thickness is varied in any of right-angled steps, straight-line slopes, curvy-line slopes, and a combination thereof.

9. The silicon-based modulator of claim 1 , wherein the transition zone includes a step at one or more of the core region and the contact region.

10. The silicon-based modulator of claim 1 , wherein a thickness of the transition zone is set such that highly doped silicon is in regions of smaller thickness.

11. A method comprising:
forming a silicon-based modulator that includes
a waveguide including a contact region and a core region,
wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable, wherein the core region is weakly doped relative to the transition zone and includes no variable doping therein.

12. The method of claim 11 , wherein the forming includes
implanting of strong dopants in the contact region,
annealing and diffusing of the strong dopants,
implanting of weak dopants in the core region, and
annealing and diffusing of the weak dopants.

13. The method of claim 11 , wherein the doping profile is an exponential curve.

14. The method of claim 11 , wherein the doping profile includes a non-linear transition from the contact region to the core region.

15. The method of claim 11 , wherein the waveguide further includes
a first region adjacent to the contact region in a lateral direction within the waveguide; and
a second region adjacent to the core region in the lateral direction within the waveguide,
wherein the doping profile decreases faster in the first region than in the second region.

16. The method of claim 11 , wherein the transition zone includes a same thickness between the contact region and the core region.

17. The method of claim 11 , wherein the transition zone includes a different thickness between the contact region and the core region.

18. The method of claim 17 , wherein the different thickness is varied in discrete levels.

19. The method of claim 17 , wherein the different thickness is varied in any of right-angled steps, straight-line slopes, curvy-line slopes, and s combination thereof.

20. The method of claim 11 , wherein the transition zone includes a step at one or more of the core region and the contact region.

Assignees

• Ciena Corp

Inventors

• Delisle-Simard Alexandre
• Painchaud Yves

Classifications

• G02F2202/105

  single crystal Si · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F2202/06

  dopant · CPC title

• G02F1/0156

  using free carrier absorption · CPC title