Hybrid probe, physical property analysis apparatus including the same, and method of measuring semiconductor device using the apparatus

Patent metadata

Field	Value
Publication number	US-11680898-B2
Application number	US-202117183577-A
Country	US
Kind code	B2
Filing date	Feb 24, 2021
Priority date	Jul 8, 2020
Publication date	Jun 20, 2023
Grant date	Jun 20, 2023

Abstract

A hybrid probe includes a probe body including a wiring and extending in a first direction; and a probe tip coupled to the probe body and including a first antenna, a second antenna, and an isolation layer. The hybrid probe may operate in a reflection mode using the first antenna and the second antenna, and operate in a transmission mode using the second antenna.

First claim

What is claimed is:

1. A hybrid probe, comprising:
a probe body including a wiring and extending in a first direction; and
a probe tip coupled to the probe body, the probe tip including:
a semiconductor substrate having a flat shape,
a first antenna on a first surface of the semiconductor substrate,
a second antenna on a second surface of the semiconductor substrate, the second surface being opposite the first surface, and
an isolation layer between the first and second surfaces of the semiconductor substrate,

wherein the hybrid probe operates in a reflection mode using the first antenna and the second antenna, and operates in a transmission mode using the second antenna.

2. The hybrid probe as claimed in claim 1 , wherein:
the semiconductor substrate has the flat shape and an end portion, the flat shape extending in the first direction from the probe body, and the end portion having a tapering shape having a sharp point at a side opposite a portion of the probe tip coupled to the probe body, and
the isolation layer separates the semiconductor substrate into at least two sections.

3. The hybrid probe as claimed in claim 2 , wherein:
the first antenna is an emitter antenna and includes a dipole unit, a director, an extension, and a reflector, and
the second antenna is a detector antenna and includes two needles.

4. The hybrid probe as claimed in claim 3 , wherein:
the dipole unit includes two first conductive lines in the end portion, the two first conductive lines being separated from each other in a second direction that is perpendicular to the first direction,
the director includes at least two second conductive lines below the dipole unit in the first direction, the at least two second conductive lines being separated from each other in the first direction and each having a length in the second direction, the length being shorter as each approaches the sharp point,
the extension includes two third conductive lines extending from the first conductive lines to the wiring in the first direction, the two third conductive lines being separated from each other in the second direction, and
the reflector includes two fourth conductive lines above the dipole unit in the first direction, the two fourth conductive lines being respectively at both sides of the extension in the second direction.

5. The hybrid probe as claimed in claim 3 , wherein:
each of the two needles extends from the wiring to the sharp point of the end portion in the first direction,
the two needles are separated from each other in a second direction that is perpendicular to the first direction, and
each of the two needles includes a protrusion facing the other of the two needles in the second direction.

6. The hybrid probe as claimed in claim 2 , wherein the isolation layer has a substantially same flat shape as the semiconductor substrate, is interposed in a middle portion of the semiconductor substrate in a third direction, and separates the semiconductor substrate into two sections, the third direction being perpendicular to the first surface.

7. The hybrid probe as claimed in claim 6 , wherein:
the semiconductor substrate includes one of gallium arsenide (GaAs) and indium gallium arsenide (InGaAs) and has a thickness of about 3 μm, and
the isolation layer includes a flat metal plate and has a thickness of at least 70 nm.

8. The hybrid probe as claimed in claim 2 , wherein:
the isolation layer has a cross-shape in a cross-section that is perpendicular to the first direction, and separates the semiconductor substrate into four sections,
the first antenna includes two emitter antennas on the first surface, the two emitter antennas having different structures from each other, and
the second antenna includes two detector antennas on the second surface, the two detector antennas having different structures from each other.

9. The hybrid probe as claimed in claim 1 , wherein the isolation layer includes one of a reflecting structure, an absorbing structure, a metal, and a dielectric.

10. A physical property analysis apparatus, comprising:
a light source configured to generate and output a beam;
a hybrid probe configured to operate in one of a transmission mode and a reflection mode;
a stage configured to receive thereon an object that is to be analyzed;
an optical system configured to radiate the beam from the light source to the hybrid probe; and
a detector configured to detect a signal generated from an infrared (IR) signal transmitted from the object,
wherein the hybrid probe includes a probe body and a probe tip, the probe body including a wiring, and the probe tip being coupled to the probe body,
wherein the probe tip includes:
a semiconductor substrate having a flat shape,
an emitter antenna on a first surface of the semiconductor substrate
a detector antenna on a second surface of the semiconductor substrate, the second surface being opposite the first surface, and
an isolation layer between the first and second surfaces of the semiconductor substrate, and

wherein the physical property analysis apparatus is configured to analyze the object using the emitter antenna and the detector antenna in the reflection mode, and analyze the object using the detector antenna in the transmission mode.

11. The physical property analysis apparatus as claimed in claim 10 , wherein:
the semiconductor substrate has the flat shape and an end portion, the flat shape extending in a first direction from the probe body, and the end portion having a tapering shape having a sharp point at a side opposite a portion of the probe tip coupled to the probe body, and
the isolation layer separates the semiconductor substrate into at least two sections.

12. The physical property analysis apparatus as claimed in claim 11 , wherein:
the isolation layer has a substantially same flat shape as the semiconductor substrate and separates the semiconductor substrate into two sections,
the emitter antenna includes a dipole unit, a director, an extension, and a reflector, and
the detector antenna includes two needles.

13. The physical property analysis apparatus as claimed in claim 11 , wherein:
the isolation layer has a cross-shape in a cross-section that is perpendicular to the first direction, and separates the semiconductor substrate into four sections,
two emitter antennas are arranged on the first surface and have different structures from each other, and
two detector antennas are arranged on the second surface and have different structures from each other.

14. The physical property analysis apparatus as claimed in claim 10 , wherein:
the isolation layer includes one of a reflecting structure, an absorbing structure, a flat metal plate, and a dielectric, and
when the isolation layer includes the flat metal plate, the isolation layer has a thickness of at least 70 nm.

15. The physical property analysis apparatus as claimed in claim 10 , wherein:
the light source is configured to generate and output a femtosecond pulsed laser beam, and
the optical system includes:
a scanner configured to delay the femtosecond pulsed laser beam from the light source; and
a mirror unit configured to transmit the femtosecond pulsed laser beam from one of the light source and the scanner to the hybrid probe.

16. The physical property analysis apparatus as claimed in claim 15 , wherein:
the mirror unit includes a first mirror unit configured to transmit the femtosecond pulsed laser beam to the emitter antenna, and a second mirror unit configured to transmit the femtosecond pulsed laser beam to the detector ant

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Junbum
• Koo Namil
• Baek Inkeun
• Yoon Jongmin

Classifications

• G01N21/3581 Primary

  using far infrared light; using Terahertz radiation · CPC title

• H01Q23/00

  Antennas with active circuits or circuit elements integrated within them or attached to them · CPC title

• G01N2021/3568

  applied to semiconductors, e.g. Silicon · CPC title

• H01Q1/525

  between emitting and receiving antennas · CPC title

• H01Q21/062

  using dipole aerials; (H01Q21/067, H01Q21/068 take precedence) · CPC title