Metal-free monolithic epitaxial graphene-on-diamond PWB
US-9504158-B2 · Nov 22, 2016 · US
Composite sintered material
US11680022B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11680022-B2 |
| Application number | US-201816604729-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 6, 2018 |
| Priority date | Aug 24, 2017 |
| Publication date | Jun 20, 2023 |
| Grant date | Jun 20, 2023 |
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Abstract
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A composite sintered material includes a plurality of diamond grains, a plurality of cubic boron nitride grains, and a remainder of a binder phase, wherein the binder phase includes cobalt, a content of the cubic boron nitride grains in the composite sintered material is more than or equal to 3 volume % and less than or equal to 40 volume %, and an average length of line segments extending across continuous cubic boron nitride grains in appropriately specified straight lines extending through the composite sintered material is less than or equal to a length three times as large as an average grain size of the cubic boron nitride grains.
First claim
Opening claim text (preview).
The invention claimed is: 1. A composite sintered material comprising a plurality of diamond grains, a plurality of cubic boron nitride grains, and a remainder of a binder phase, wherein the binder phase includes cobalt, a content of the cubic boron nitride grains in the composite sintered material is more than or equal to 3 volume % and less than or equal to 40 volume %, and an average length of line segments extending across continuous cubic boron nitride grains in appropriately specified straight lines extending through the composite sintered material is less than or equal to a length three times as large as an average grain size of the cubic boron nitride grains. 2. The composite sintered material according to claim 1 , wherein an average length of line segments extending across the diamond grains or across the diamond grains and the binder phase adjacent to the diamond grains in the appropriately specified straight lines extending through the composite sintered material is more than or equal to 0.3 μm and less than or equal to 5 μm. 3. The composite sintered material according to claim 1 , wherein a standard deviation of lengths of line segments extending across the diamond grains or across the diamond grains and the binder phase adjacent to the diamond grains in the appropriately specified straight lines extending through the composite sintered material is less than or equal to 3.0 μm. 4. The composite sintered material according to claim 1 , wherein the average grain size of the cubic boron nitride grains is more than or equal to 0.2 μm and less than or equal to 2 μm. 5. The composite sintered material according to claim 1 , wherein an average grain size of the diamond grains is more than or equal to 0.5 μm and less than or equal to 5 μm. 6. A composite sintered material comprising a plurality of diamond grains, a plurality of cubic boron nitride grains, and a remainder of a binder phase, wherein the binder phase includes cobalt, a content of the cubic boron nitride grains in the composite sintered material is more than or equal to 3 volume % and less than or equal to 40 volume %, an average length of line segments extending across continuous cubic boron nitride grains in appropriately specified straight lines extending through the composite sintered material is less than or equal to a length three times as large as an average grain size of the cubic boron nitride grains, an average length of line segments extending across the diamond grains or across the diamond grains and the binder phase adjacent to the diamond grains in the appropriately specified straight lines extending through the composite sintered material is more than or equal to 0.3 μm and less than or equal to 5 μm, and a standard deviation of the line segments extending across the diamond grains or across the diamond grains and the binder phase adjacent to the diamond grains in the appropriately specified straight lines extending through the composite sintered material is less than or equal to 3.0 μm, the average grain size of the cubic boron nitride grains is more than or equal to 0.2 μm and less than or equal to 2 μm, and an average grain size of the diamond grains is more than or equal to 0.5 μm and less than or equal to 5 μm.
Assignees
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Classifications
Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} · CPC title
Boron nitrides · CPC title
Diamond · CPC title
- C04B35/528Primary
obtained from carbonaceous particles with or without other non-organic components · CPC title
Nanograined materials, i.e. having grain sizes below 100 nm · CPC title
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- What does patent US11680022B2 cover?
- A composite sintered material includes a plurality of diamond grains, a plurality of cubic boron nitride grains, and a remainder of a binder phase, wherein the binder phase includes cobalt, a content of the cubic boron nitride grains in the composite sintered material is more than or equal to 3 volume % and less than or equal to 40 volume %, and an average length of line segments extending acro…
- Who is the assignee on this patent?
- Sumitomo Electric Industries, Sumitomo Electric Hardmetal Corp
- What technology area does this patent fall under?
- Primary CPC classification C04B35/528. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 20 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).