Method of determining control parameters of a device manufacturing process
US-2021149312-A1 · May 20, 2021 · US
US11657207B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11657207-B2 |
| Application number | US-202117378423-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 16, 2021 |
| Priority date | Jul 28, 2020 |
| Publication date | May 23, 2023 |
| Grant date | May 23, 2023 |
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A method comprises receiving an integrated circuit (IC) chip design, and generating, by one or more processors, a wafer image and a wafer target from the IC chip design. The method further comprises generating, by the one or more processors, sensitivity information based on a determination that the wafer image and the wafer target converge, and outputting the sensitivity information. The sensitivity information is associated with writing a mask written for the IC chip design.
Opening claim text (preview).
What is claimed is: 1. A method comprising: receiving an integrated circuit (IC) chip design; generating, by one or more processors, a wafer image and a wafer target from the IC chip design; determining that the wafer image and the wafer target converge based on a difference between the wafer image and the wafer target being less than a threshold; generating, by the one or more processors, sensitivity information based on the determination that the wafer image and the wafer target converge; and outputting the sensitivity information, wherein the sensitivity information is associated with writing a mask written for the IC chip design. 2. The method of claim 1 further comprising: determining a mask design file from the IC chip design; and outputting the mask design file from a mask synthesis engine to a mask writing device, wherein the sensitivity information indicates a sensitivity of one or more polygons of the IC chip design to mask writing errors. 3. The method of claim 1 further comprising: generating a mask representation from the IC chip design; and simulating the mask representation to generate the wafer image. 4. The method of claim 3 further comprising modifying the mask representation based on a determination that the wafer image and the wafer target do not converge. 5. The method of claim 1 , wherein generating the sensitivity information comprises: determining a sensitivity value at one or more points along a polygon within the IC chip design by perturbing one or more edges within a mask representation corresponding to the wafer image. 6. The method of claim 5 , wherein generating the sensitivity information further comprises altering a size of the polygon based on the sensitivity value. 7. The method of claim 1 , wherein generating the sensitivity information comprises determining one of sensitivity bands of a polygon within the IC chip design, variation amounts of the polygon, and gradation levels for the polygon. 8. A non-transitory computer readable medium comprising stored instructions, which when executed by a processor, cause the processor to: receive an integrated circuit (IC) chip design; generate a wafer image and a wafer target from the IC chip design; determine that the wafer image and the wafer target converge based on a difference between the wafer image and the wafer target being less than a threshold; generate sensitivity information based on the determination that the wafer image and the wafer target converge; and output the sensitivity information to a mask writing device. 9. The non-transitory computer readable medium of claim 8 , wherein the processor is further caused to: determine a mask design file from the IC chip design; and output the mask design file to the mask design file from a mask synthesis engine to the mask writing device. 10. The non-transitory computer readable medium of claim 8 , wherein the processor is further caused to: generate a mask representation from the IC chip design; and simulate the mask representation to generate the wafer image. 11. The non-transitory computer readable medium of claim 10 , wherein the processor is further caused to modify the mask representation based on a determination that the wafer image and the wafer target do not converge. 12. The non-transitory computer readable medium of claim 8 , wherein generating the sensitivity information comprises: determining a sensitivity value at one or more points along a polygon within the IC chip design by perturbing one or more edges within a mask representation corresponding to the wafer image. 13. The non-transitory computer readable medium of claim 12 , wherein generating the sensitivity information further comprises altering a size of the polygon based on the sensitivity value. 14. The non-transitory computer readable medium of claim 8 , wherein generating the sensitivity information comprises determining one of sensitivity bands of a polygon within the IC chip design, variation amounts of the polygon, and gradation levels for the polygon. 15. A lithography system comprising: a memory; and a processor coupled with the memory, the processor configured to: receive an integrated circuit (IC) chip design; generate a wafer image and a wafer target from the IC chip design; determine that the wafer image and the wafer target converge based on a difference between the wafer image and the wafer target being less than a threshold; generate sensitivity information based on the determination that the wafer image and the wafer target converge; and output the sensitivity information to a mask writing device. 16. The lithography system of claim 15 , wherein the processor is further configured to: determine a mask design file from the IC chip design; and output the mask design file to the mask writing device. 17. The lithography system of claim 15 , wherein the processor is further configured to: generate a mask representation from the IC chip design; and simulate the mask representation to generate the wafer image. 18. The lithography system of claim 17 , wherein the processor is further configured to modify the mask representation based on a determination that the wafer image and the wafer target do not converge. 19. The lithography system of claim 15 , wherein generating the sensitivity information comprises: determining a sensitivity value at one or more points along a polygon within the IC chip design by perturbing one or more edges within a mask representation corresponding to the wafer image. 20. The lithography system of claim 15 , wherein generating the sensitivity information comprises determining one of sensitivity bands of a polygon within the IC chip design, variation amounts of the polygon, and gradation levels for the polygon.
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