Passivated nanoparticles

Patent metadata

Field	Value
Publication number	US-11656231-B2
Application number	US-201615243644-A
Country	US
Kind code	B2
Filing date	Aug 22, 2016
Priority date	Sep 23, 2009
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

Passivated semiconductor nanoparticles and methods for the fabrication and use of passivated semiconductor nanoparticles is provided herein.

First claim

What is claimed is:

1. A method for passivating a semiconductor nanocrystal, said method comprising:
applying a binary semiconductor coating over an alloy-gradient nanoparticle, said binary semiconductor coating having a wider band gap than the alloy-gradient nanoparticle to provide a binary semiconductor coated alloy-gradient nanoparticle;
coating the binary semiconductor coated alloy-gradient nanoparticle with an aluminum layer comprising several monolayers of aluminum; and
oxidizing the aluminum layer comprising several monolayers of aluminum by exposure to an ambient environment to form an aluminum oxide layer thereon, whereby a passivated semiconductor nanocrystal is obtained.

2. The method of claim 1 , wherein the alloy-gradient nanoparticle comprises a II-VI, IV-VI, or a III-V semiconductor material.

3. The method of claim 1 , wherein the alloy-gradient nanoparticle comprises CdS, ZnS, PbS, CdSe, ZnSe, PbSe, ZnTe, Pb Te, or CdTe.

4. The method of claim 1 , wherein the alloy-gradient nanoparticle comprises CdZnS, CdZnSe, CdSeS, CdZnTe, CdZnTeSe, or CdZnSSe.

5. The method of claim 1 , wherein the alloy-gradient nanoparticle comprises GaAs, GaP, GaN, InP, InAs, GaAlAs, GaAIP, GaAIN, GaInN, GaAlAsP, or GaAlInN.

6. The method of claim 1 , wherein the binary semiconductor coating comprises at least one Group II element and two or more different Group VI elements.

7. The method of claim 1 , wherein the binary semiconductor coating comprises CdS, ZnS, PbS, CdSe, ZnSe, PbSe, ZnTe, PbTe, CdTe, CdZnS, CdZnSe, CdZnTe, CdZnTeSe, CdZnSSe, GaAs, GaP, GaN, InP, InAs, GaAlAs, GaAIP, GaAIN, GaInN, GaAlAsP, or GaAlInN.

8. The method of claim 1 , wherein the binary semiconductor coating comprises ZnS, CdS, CdSe, CdTe, GaAs, or AlGaAs.

9. The method of claim 1 , wherein the binary semiconductor coating has a thickness from 1 to 10 atomic layers.

10. The method of claim 1 , wherein the aluminum oxide layer comprises amorphous Al 2 O 3 .

11. A method for fabricating a passivated semiconductor nanocrystal, said method comprising:
synthesizing an alloy-gradient nanoparticle, said nanoparticle comprising at least one Group II element and two or more different Group VI elements;
applying a semiconductor coating over said alloy-gradient nanoparticle, said semiconductor coating having a wider band gap than the alloy-gradient nanoparticle, to provide a semiconductor coated alloy-gradient nanoparticle;
coating the semiconductor coated alloy-gradient nanoparticle with an aluminum layer comprising several monolayers of aluminum; and
oxidizing said aluminum layer comprising several monolayers of aluminum by exposure to an ambient environment to form an aluminum oxide layer thereon, whereby a passivated semiconductor nanocrystal is obtained.

12. The method of claim 11 , wherein the semiconductor coating is a binary semiconductor coating.

13. The method of claim 11 , wherein the semiconductor coating is an alloy-gradient coating comprising at least one Group II element and two or more different Group VI elements.

14. The method of claim 11 , wherein synthesizing comprises dissolving the at least one Group II element and the two or more different Group VI elements in a solvent comprising octadecene and a fatty acid to provide a nanocrystal precursor solution; and heating said nanocrystal precursor solution.

15. The method of claim 11 , wherein the alloy-gradient nanoparticle is homogenous.

16. The method of claim 11 , wherein the alloy-gradient nanoparticle is nonhomogeneous.

17. The method of claim 11 , further comprising, after oxidizing the aluminum layer, the step of coupling an active agent to the aluminum oxide layer.

18. The method of claim 17 , wherein the active agent is associated with the surface of, encapsulated within, surrounded by, or dispersed throughout the passivated semiconductor nanocrystal.

19. The method of claim 11 , further comprising, after oxidizing the aluminum layer, the step of coating said passivated semiconductor nanocrystal with an additional passivation material.

20. The method of claim 11 , further comprising, after oxidizing the aluminum layer, the step of coating said passivated semiconductor nanocrystal with a protective coating.

Assignees

• Tectus Corp

Inventors

• Qu Lianhua
• Miller Gregory

Classifications

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/2916

  Selenides · CPC title

• H10P14/2915

  Sulfides · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title