Semiconductor nanocrystal and preparation method thereof

Patent metadata

Field	Value
Publication number	US-9570549-B2
Application number	US-83181610-A
Country	US
Kind code	B2
Filing date	Jul 7, 2010
Priority date	Jul 8, 2009
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

First claim

What is claimed is:

1. A semiconductor nanocrystal, comprising:
a bare semiconductor nanocrystal comprising a core-shell structure,
an organic ligand bound to the bare semiconductor nanocrystal, and
a water molecule directly bound to the bare semiconductor nanocrystal by mixing the bare semiconductor nanocrystal and water, wherein the mixing comprises: preparing a semiconductor nanocrystal solution comprising an organic solvent and the bare semiconductor nanocrystal having the organic ligand bound thereto and adding the water to the semiconductor nanocrystal solution,
wherein the shell comprises a Group II-VI semiconductor material, a Group III-V semiconductor material, or a Group IV-VI semiconductor material,
wherein the organic ligand comprises a mercapto spacer thiol or a compound represented by the following Chemical Formula 1:
X—(R) n -Y m   Chemical Formula 1

wherein, in Chemical Formula 1,
R is selected from a C1 to C30 alkylene group; a C6 to C30 arylene group; a C6 to C30 heteroarylene group; a C3 to C30 cycloalkylene group; a C3 to C30 heterocycloalkylene group; a C2 to C30 alkenylene group; a C2 to C30 alkynylene group; a C3 to C30 alicyclic group comprising a double bond or a triple bond in a ring; a C3 to C30 heterocycloalkylene group comprising a double bond or a triple bond in a ring; a C3 to C30 alicyclic group substituted with a C2 to C30 alkenyl group or C2 to C30 alkynyl group; or a C3 to C30 heterocycloalkylene group substituted with a C2 to C30 alkenyl group or a C2 to C30 alkynyl group,
n is an integer of 1 or more, and
X is selected from S, SH, P, P═O, PO 3 , NH, H 2 N, CN, NCO, O, a halogen, an acyl halide, COO, COOH, H, OH, or a combination thereof,
Y is H, and
m is an integer of 1 or more

wherein the mercapto spacer thiol is selected from mercapto methyl thiol, mercapto ethyl thiol, mercapto propyl thiol, mercapto butyl thiol, and mercapto pentyl thiol,
wherein one or more functional groups of —OH, —O, or —H are further bound to the bare semiconductor nanocrystal,
the core of the bare semiconductor nanocrystal comprises the Group III-V semiconductor material, and
wherein the semiconductor nanocrystal has a luminous efficiency of about 50% or more.

2. The semiconductor nanocrystal of claim 1 , wherein the water molecule is bound to the bare semiconductor nanocrystal via a coordination bond, a hydrogen bond, or via a van der Waals force.

3. The semiconductor nanocrystal of claim 1 , wherein the semiconductor nanocrystal is prepared by a process comprising:
contacting a first semiconductor nanocrystal comprising a core-shell structure with an organic solvent to provide a semiconductor nanocrystal solution, and
adding water to the semiconductor nanocrystal solution.

4. A semiconductor nanocrystal of claim 1 , wherein the core-shell structure has a shell defect area on a surface of the bare semiconductor nanocrystal and the water molecule is directly bound to the shell defect area on the surface of the bare semiconductor nanocrystal.

5. The semiconductor nanocrystal of claim 4 , wherein the luminous efficiency is about 70% or more.

6. The semiconductor nanocrystal of claim 4 , wherein the semiconductor nanocrystal has a full width at half maximum of about 60 nm or less.

7. The semiconductor nanocrystal of claim 4 , wherein the semiconductor nanocrystal has a luminous efficiency of about 70% or more, an FWHM of about 45 nm or less, and a light emitting peak wavelength of about 510 to about 560 nm.

8. The semiconductor nanocrystal of claim 4 , wherein the semiconductor nanocrystal has a luminous efficiency of about 70% or more, a full width at half maximum of about 50 nm or less, and a light emitting peak wavelength of about 560 to about 580 nm.

9. The semiconductor nanocrystal of claim 4 , wherein the semiconductor nanocrystal has a luminous efficiency of about 70% or more, a full width at half maximum of about 60 nm or less, and a light emitting peak wavelength of about 580 to about 640 nm.

10. A method for preparing a semiconductor nanocrystal of claim 1 , comprising:
mixing the bare semiconductor nanocrystal having the organic ligand bound thereto with water,
wherein the mixing of the bare semiconductor nanocrystal having the organic ligand bound thereto and the water comprises:
preparing a semiconductor nanocrystal solution comprising an organic solvent and the bare semiconductor nanocrystal having the organic ligand bound thereto, and
adding the water to the semiconductor nanocrystal solution.

11. The method of claim 10 , wherein a weight ratio of the water to the first semiconductor nanocrystal is about 1:1 to about 100:1.

12. The method of claim 10 , wherein the water is added in an amount of about 0.01 parts by volume to about 100 parts by volume based on about 100 parts by volume of the semiconductor nanocrystal solution.

13. The method of claim 10 , further comprising:
mixing the bare semiconductor nanocrystal having the organic ligand bound thereto with a polar compound.

14. The method of claim 13 , wherein the polar compound is present in an amount of about 0.1 to about 10 parts by volume based on about 100 parts by volume of water.

15. The method of claim 10 , wherein the mixing of the bare semiconductor nanocrystal having the organic ligand bound thereto and the water is performed under an inert gas atmosphere.

16. The method of claim 10 , further comprising irradiating light to the semiconductor nanocrystal solution.

17. The method of claim 16 , wherein the light has energy higher than an energy band gap of the semiconductor nanocrystal.

18. The method of claim 16 , wherein the light has a shorter wavelength than a light emitting wavelength of the semiconductor nanocrystal.

19. A semiconductor nanocrystal composite comprising:
a matrix, and
the semiconductor nanocrystal of claim 1 .

20. The semiconductor nanocrystal composite of claim 19 , wherein the matrix comprises poly(vinyl alcohol), poly(vinyl carbazole), poly(vinyl fluoride), poly(methyl vinyl ether), poly(ethylene), poly(propylene), poly(styrene), poly(vinyl pyridine), poly(ethylene oxide), poly(alkylacrylate), poly(silane), poly(carbonate), poly(siloxane), (poly)acrylate, an epoxy resin, titania, silica, alumina, zirconia, indium tin oxide, or a mixture thereof.

21. A light emitting device, comprising:
the semiconductor nanocrystal of claim 1 .

22. The light emitting device of claim 21 , wherein the light emitting device comprises a first electrode and a second electrode, and the semiconductor nanocrystal or a semiconductor nanocrystal composite is disposed between the first and the second electrodes.

23. The light emitting device of claim 21 , wherein the light emitting device comprises a light source, and the semiconductor nanocrystal or a semiconductor nanocrystal composite is disposed on the light source.

24. A semiconductor nanocrystal of claim 1 , wherein in Chemical Formula 1,
R is selected from a C1 to C30 alkylene group; a C2 to C30 alkenylene group; or a C2 to C30 alkynylene group; and
X is selected from S, SH, CN, NCO, O, a halogen, an acyl halide, COO, COOH, H, OH, or a combination thereof.

25. A semiconductor nanocrystal solution comprising:
a semiconductor nanocrystal of claim 1 , and
an organic solvent comprising an aromatic solvent, an alkane solvent, a non-polar solvent, a polar solvent, or a combination thereof.

26. The semiconductor nano

Assignees

• Jang Eun-Joo
• Hong Seok-Hwan
• Jun Shin-Ae
• Jang Hyo-Sook
• Samsung Electronics Co Ltd

Inventors

• Jang Eun-Joo
• Hong Seok-Hwan
• Jun Shin-Ae
• Jang Hyo-Sook

Classifications

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• Y10S977/95

  Electromagnetic energy · CPC title

• Y10S977/892

  Liquid phase deposition · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title