Semiconductor device including a semiconductor element with a gate electrode on only one surface

Patent metadata

Field	Value
Publication number	US-11652023-B2
Application number	US-202017078931-A
Country	US
Kind code	B2
Filing date	Oct 23, 2020
Priority date	Nov 11, 2019
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

Provided is a highly reliable semiconductor device capable of reducing stress generated in a semiconductor element even when a highly elastic joining material such as a Pb-free material is used in a power semiconductor having a double-sided mounting structure. The semiconductor device includes a semiconductor element including a gate electrode only on one surface, an upper electrode connected to the surface of the semiconductor element on which the gate electrode is provided, and a lower electrode connected to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided. A connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor element including a gate electrode only on one surface;
an upper electrode directly connected, via a first conductive joining material, to the surface of the semiconductor element on which the gate electrode is provided; and
a lower electrode directly connected, via a second conductive joining material, to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided, wherein
a connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element; and
the first conductive joining material is wider at a surface contacting the semiconductor element than a surface contacting the upper electrode, and the second conductive joining material is wider at a surface contacting the semiconductor element than a surface contacting the lower electrode.

2. The semiconductor device according to claim 1 , wherein
in at least one corner portion of the semiconductor element, the connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside the end portion of the opposite surface of the semiconductor element.

3. The semiconductor device according to claim 2 , wherein
except for the corner portion of the semiconductor element, the connection end portion of the lower electrode with the opposite surface of the semiconductor element is located outside the end portion of the opposite surface of the semiconductor element.

4. The semiconductor device according to claim 1 , wherein
an end portion of a connection portion between the first conductive joining material and the upper electrode, an end portion of a connection portion between the second conductive joining material and the lower electrode, an end portion of a connection portion between the first conductive joining material and the semiconductor element, and an end portion of a connection portion between the second conductive joining material and the semiconductor element are located inside an end portion of the semiconductor element.

5. The semiconductor device according to claim 4 , wherein
the end portion of the connection portion between the first conductive joining material and the upper electrode and the end portion of the connection portion between the second conductive joining material and the lower electrode are substantially aligned in a vertical direction.

6. The semiconductor device according to claim 5 , wherein
the end portion of the connection portion between the first conductive joining material and the upper electrode, the end portion of the connection portion between the second conductive joining material and the lower electrode, the end portion of the connection portion between the first conductive joining material and the semiconductor element, and the end portion of the connection portion between the second conductive joining material and the semiconductor element are substantially aligned in the vertical direction.

7. The semiconductor device according to claim 4 , wherein
the first conductive joining material and the second conductive joining material are any one of a lead-free solder, a sintered material, and a conductive adhesive material.

8. A semiconductor device comprising:
a semiconductor element including an outer peripheral portion insulating layer on a chip outer peripheral portion only on one surface;
an upper electrode directly connected, via a first conductive joining material, to the surface of the semiconductor element on which the outer peripheral portion insulating layer is provided; and
a lower electrode directly connected, via a second conductive joining material, to a surface opposite to the surface of the semiconductor element on which the outer peripheral portion insulating layer is provided, wherein
the semiconductor element is a diode, and
a connection end portion of the upper electrode with the surface of the semiconductor element on which the outer peripheral portion insulating layer is provided is located inside an end portion of the surface of the semiconductor element on which the outer peripheral portion insulating layer is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element; and
the first conductive joining material is wider at a surface contacting the semiconductor element than a surface contacting the upper electrode, and the second conductive joining material is wider at a surface contacting the semiconductor element than a surface contacting the lower electrode.

9. The semiconductor device according to claim 8 , wherein
in at least one corner portion of the semiconductor element, the connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside the end portion of the opposite surface of the semiconductor element.

10. The semiconductor device according to claim 9 , wherein
except for the corner portion of the semiconductor element, the connection end portion of the lower electrode with the opposite surface of the semiconductor element is located outside the end portion of the opposite surface of the semiconductor element.

11. The semiconductor device according to claim 8 , wherein
an end portion of a connection portion between the first conductive joining material and the upper electrode, an end portion of a connection portion between the second conductive joining material and the lower electrode, an end portion of a connection portion between the first conductive joining material and the semiconductor element, and an end portion of a connection portion between the second conductive joining material and the semiconductor element are located inside an end portion of the semiconductor element.

12. The semiconductor device according to claim 11 , wherein
the end portion of the connection portion between the first conductive joining material and the upper electrode and the end portion of the connection portion between the second conductive joining material and the lower electrode are substantially aligned in a vertical direction.

13. The semiconductor device according to claim 12 , wherein
the end portion of the connection portion between the first conductive joining material and the upper electrode, the end portion of the connection portion between the second conductive joining material and the lower electrode, the end portion of the connection portion between the first conductive joining material and the semiconductor element, and the end portion of the connection portion between the second conductive joining material and the semiconductor element are substantially aligned in the vertical direction.

14. The semiconductor device according to claim 11 , wherein
the first conductive joining material and the second conductive joining material are any one of a lead-free solder, a sintered material, and a conductive adhesive material.

Assignees

• Hitachi Power Semiconductor Device Ltd

Inventors

• Takeda Naoki
• Onda Tomohiro
• Kawano Kenya
• Shintani Hiroshi
• Harubeppu Yu
• Tanie Hisashi

Classifications

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/417

  Bonding materials between chips and die pads · CPC title

• H10W70/65 Primary

  Shapes or dispositions of interconnections · CPC title

• H10W70/20

  Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40) · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title