Resist underlayer film-forming composition containing novolac resin reacted with aromatic methylol compound

Patent metadata

Field	Value
Publication number	US-11650505-B2
Application number	US-201515502600-A
Country	US
Kind code	B2
Filing date	Aug 4, 2015
Priority date	Aug 8, 2014
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1):The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition containing a novolac resin, wherein
the novolac resin is obtained by:
a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B), wherein the aromatic compound (A) is phenylindole or phenylnaphthylamine and the hydroxy group-containing aromatic methylol compound (B) is 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol; and

a condensation reaction to form novolac comprising a reaction of the aromatic compound (A) with naphthaldehyde or pyrenecarboxyaldehyde,
wherein a molar ratio of the naphthaldehyde or the pyrenecarboxyaldehyde to the aromatic compound (A) is 0.6-1:1, and wherein a molar ratio of the hydroxy group-containing aromatic methylol compound (B) to the aromatic compound (A) is 0.4-0.5:1, and
wherein the condensation reaction is carried out simultaneously with the reaction of the aromatic ring of the aromatic compound (A) with the hydroxy group-containing aromatic methylol compound (B) in a one-pot reaction.

2. The resist underlayer film-forming composition according to claim 1 , wherein the aromatic compound (A) is phenylnaphthylamine.

3. The resist underlayer film-forming composition according to claim 1 , wherein the aromatic compound (A) is phenylindole.

4. The resist underlayer film-forming composition according to claim 1 , wherein the condensation reaction of the aromatic compound (A) is with the naphthaldehyde.

5. The resist underlayer film-forming composition according to claim 1 , further comprising a solvent.

6. The resist underlayer film-forming composition according to claim 1 , further comprising an acid and/or an acid generator.

7. The resist underlayer film-forming composition according to claim 1 , further comprising a crosslinker.

8. A resist underlayer film-forming composition containing a novolac resin containing a structure (C), the structure (C) of the novolac resin including one or more structure selected from the group consisting of Formula (3-4), Formula (3-5), and Formula (3-6):

9. The resist underlayer film-forming composition according to claim 8 , wherein the structure (C) is Formula (3-6).

10. The resist underlayer film-forming composition according to claim 8 , wherein the structure (C) is Formula (3-4).

11. The resist underlayer film-forming composition according to claim 8 , wherein the structure (C) is Formula (3-5).

12. A method for forming a resist pattern used in production of a semiconductor comprising the step of applying the resist underlayer film-forming composition according to claim 1 to a semiconductor substrate followed by firing, to form an underlayer film.

13. A method for producing a semiconductor device comprising the steps of:
forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition according to claim 1 ;
forming a resist film on the underlayer film;
forming a resist pattern by irradiation with light or an electron beam and development;
etching the underlayer film through the resist pattern; and
processing the semiconductor substrate through the patterned underlayer film.

14. A method for producing a semiconductor device comprising the steps of:
forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition according to claim 1 ;
forming a hard mask on the underlayer film;
forming a resist film on the hard mask;
forming a resist pattern by irradiation with light or an electron beam and development;
etching the hard mask through the formed resist pattern;
etching the underlayer film through the patterned hard mask; and
processing the semiconductor substrate through the patterned underlayer film.

15. The method according to claim 14 , wherein the hard mask is a vapor deposition film of an inorganic substance.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Nishimaki Hirokazu
• Sakamoto Rikimaru
• Hashimoto Keisuke
• Endo Takafumi

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title