Superlattice electro-optic device including reconfigurable optical elements

Patent metadata

Field	Value
Publication number	US-11650438-B2
Application number	US-201916529978-A
Country	US
Kind code	B2
Filing date	Aug 2, 2019
Priority date	Aug 2, 2019
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

First claim

What is claimed is:

1. A method of operating at least one solid-state electro-optic device to provide an electrically switching shutter, the method comprising:
forming an alternating stack of first semiconductor layers having a first dopant including a p-type material dopant and second semiconductor layers having a second dopant an n-type material dopant to form at least one superlattice semiconductor device that includes a plurality of superlattice semiconductor devices arranged on a wafer to form an optic grid;
applying to the at least one superlattice semiconductor device a first voltage having a first intensity to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack;
applying to the at least one superlattice semiconductor device a second voltage different from the first voltage and having a second intensity that is greater than the first intensity to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack;
detecting first light incident on the first region of the optic grid, the first light having a first intensity;
detecting second light incident on the second region of the optic grid, the second light having a second intensity being greater than the first intensity; and
applying the first voltage to a first plurality of superlattice semiconductor devices located at a first region of the optic grid and applying the second voltage to a second plurality of superlattice semiconductor devices located at a second region of the optic grid different from the first region to provide a segmented shutter,
wherein the first voltage is based on the first intensity and has a first polarity such that the light is completely blocked from traveling through the alternating stack, and wherein the second voltage is based on the second intensity to inhibit transmission of the second light and has a second polarity that is opposite from the first polarity such that the light passes completely through the alternating stack.

2. A method of operating at least one solid-state electro-optic device to provide an electrically variable aperture, the method comprising:
forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device;
patterning the alternating stack of first semiconductor layers to define a first transparent transitioning region between a first pair of electrical connectors, and second transparent transitioning region between a second pair of electrical connectors;
applying a first voltage to the first and second pairs of electrical connectors to induce a first optical state of the first and second transparent transitioning regions such that a first amount of light is transmitted through the alternating stack; and
applying a second voltage to the first and second pairs of electrical connectors to induce a second optical state to the first transparent transitioning region, while maintaining the first state of the second transparent transitioning region such that a second amount of light different from the first amount is transmitted through the alternating stack.

3. The method of claim 2 , wherein the first optical state is a transparent state and the second optical state is an opaque state such that the second amount of light is less than the first amount of light.

4. The method of claim 2 , wherein the first optical state is an opaque state and the second optical state is a transparent state such that the second amount of light is greater than the first amount of light.

5. The method of claim 2 , wherein the first semiconductor layers comprises a semiconductor material doped with a p-type dopant and the second semiconductor layers comprise a semiconductor material doped with an n-type dopant, and wherein the second pair of electrical connectors includes the second electrical connector and a third electrical connector connected to the first semiconductor layers.

6. The method of claim 2 , wherein the first semiconductor layers comprises a semiconductor material doped with an n-type dopant and the second semiconductor layers comprise a semiconductor material doped with a p-type dopant, and wherein the second pair of electrical connectors includes the second electrical connector and a third electrical connector connected to the first semiconductor layers.

7. The method of claim 2 , wherein the patterning further comprises patterning the alternating stack to define circular profiles of the first and second transparent transitioning regions.

8. A method of operating at least one solid-state electro-optic device to provide a coded aperture, the method comprising:
forming a plurality of superlattice semiconductor devices on a wafer to define an optic grid, each superlattice semiconductor device including an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant; and
applying different voltages to the superlattice semiconductor devices located at different positions of the optic grid to define a pattern of the coded aperture.

9. The method of claim 8 , further comprising changing the voltage applied to at least one of the superlattice semiconductor devices to dynamically change the pattern of the coded aperture in real-time.

10. The method of claim 9 , wherein applying the different voltages comprises:
applying at least one of a first voltage and a second voltage different from the first voltage to at least one superlattice semiconductor device located at a first position of the optic grid during a first period; and
applying at least one of the first voltage and the second voltage to at least one superlattice semiconductor device located at a second position of the optic grid independently from the superlattice semiconductor device located at the first position during the first time period to define a first pattern of the coded aperture.

11. The method of claim 10 , wherein changing the voltage comprises adjusting at least one or both of the first and second voltages applied to at least one or both of the first and second positions during the second time period to define a second pattern of the coded aperture different from the first pattern.

12. The method of claim 11 , wherein changing the voltage further comprises applying a third voltage to at least one superlattice semiconductor device located at a third position of the optic grid independently from the superlattice semiconductor device located at the first and second positions to define a second pattern of the coded aperture different from the first pattern.

13. The method of claim 8 , further comprising:
receiving, via a processor, at least one input indicative of a desired pattern of the coded aperture; and
applying, via the processor, the different voltages to generate the desired pattern in response to receiving the at least one input.

Assignees

• Raytheon Co

Inventors

• Mustafa Jamal I
• Wehner Justin Gordon Adams
• Koontz Christopher R

Classifications

• G02F2203/12

  spatial light modulator · CPC title

• G02F2203/11

  involving infrared radiation · CPC title

• G02F1/017 Primary

  Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells · CPC title

• G02F2203/52

  Optical limiters · CPC title