Silicided collector structure

Patent metadata

Field	Value
Publication number	US-11640975-B2
Application number	US-202117350040-A
Country	US
Kind code	B2
Filing date	Jun 17, 2021
Priority date	Jun 17, 2021
Publication date	May 2, 2023
Grant date	May 2, 2023

Abstract

A semiconductor device includes an emitter, a base, and a collector. A portion of the collector is located below a trench in a substrate. A collector silicide is located on at least a portion of a bottom portion of the trench and on at least a portion of a sidewall of the trench. The collector silicide structure is electrically coupled to a collector contact structure.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate defining a trench, the trench including a sidewall and a bottom portion;
an emitter;
a base;
a collector, the collector including a portion located directly below the bottom portion of the trench and along the sidewall of the trench;
a collector contact structure;
a collector silicide structure including a first portion located on at least a portion of the bottom portion of the trench and a second portion located on at least a portion of the sidewall of the trench, the collector silicide structure being electrically coupled to the collector contact structure;
wherein the collector silicide structure is not located directly over a second portion of the bottom portion of the trench.

2. The semiconductor device of claim 1 wherein the collector contact structure electrically contacts a third portion of the collector silicide structure, the second portion of the collector silicide structure is located between the first portion and the third portion of the collector silicide structure.

3. The semiconductor device of claim 1 wherein the collector contact structure electrically contacts a portion of the collector silicide structure that is located outside of the trench.

4. The semiconductor device of claim 1 wherein the collector contact structure electrically contacts a portion of the collector silicide structure that is located on a portion of the substrate that is at a higher elevation than the bottom portion of the trench.

5. The semiconductor device of claim 1 wherein the collector includes a portion located directly under a portion of the base in a first area, wherein the first portion of the collector silicide structure is located laterally closer to the first area than the second portion of the collector silicide structure.

6. The semiconductor device of claim 5 wherein the portion of the base is located directly under the emitter.

7. The semiconductor device of claim 1 wherein the first portion of the collector silicide structure extends laterally closer to an area of an emitter electrode than the second portion of the collector silicide structure.

8. The semiconductor device of claim 1 wherein the collector silicide structure is in electrical contact with a plurality of regions of the collector where each region of the plurality of regions has a different net conductivity doping concentration of a first type.

9. The semiconductor device of claim 1 wherein the second portion of the collector silicide structure extends from the first portion of the collector silicide structure to a top portion of the at least a portion of the sidewall.

10. A semiconductor device comprising:
a substrate defining a trench, the trench including a sidewall and a bottom portion;
an emitter;
a base;
a collector, the collector including a portion located directly below the bottom portion of the trench and along the sidewall of the trench;
a collector contact structure;
a collector silicide structure including a first portion located on at least a portion of the bottom portion of the trench and a second portion located on at least a portion of the sidewall of the trench, the collector silicide structure being electrically coupled to the collector contact structure;
wherein the collector silicide structure is in electrical contact with a plurality of regions of the collector where each region of the plurality of regions has a different net conductivity doping concentration of a first type.

11. The semiconductor device of claim 10 wherein the collector contact structure electrically contacts a third portion of the collector silicide structure, the second portion of the collector silicide structure is located between the first portion and the third portion of the collector silicide structure.

12. The semiconductor device of claim 10 wherein the collector contact structure electrically contacts a portion of the collector silicide structure that is located outside of the trench.

13. The semiconductor device of claim 10 wherein the collector contact structure electrically contacts a portion of the collector silicide structure that is located on a portion of the substrate that is at a higher elevation than the bottom portion of the trench.

14. The semiconductor device of claim 10 wherein the collector includes a portion located directly under a portion of the base in a first area, wherein the first portion of the collector silicide structure is located laterally closer to the first area than the second portion of the collector silicide structure.

15. The semiconductor device of claim 14 wherein the portion of the base is located directly under the emitter.

16. The semiconductor device of claim 10 wherein the first portion of the collector silicide structure extends laterally closer to an area of an emitter electrode than the second portion of the collector silicide structure.

17. The semiconductor device of claim 10 wherein the second portion of the collector silicide structure extends from the first portion of the collector silicide structure to a top portion of the at least a portion of the sidewall.

Assignees

• Nxp Usa Inc

Inventors

• John Jay Paul
• Kirchgessner James Albert
• Radic Ljubo

Classifications

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D64/01

  Manufacture or treatment · CPC title

• H10D10/061

  of lateral BJTs  (of heterojunction BJTs H10D10/021; of thin film BJTs H10D10/041) · CPC title

• H10D10/60

  Lateral BJTs · CPC title

• H10D10/40

  Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)} · CPC title