Etching composition and method for manufacturing semiconductor device using the same
US-11390805-B2 · Jul 19, 2022 · US
US11639470B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11639470-B2 |
| Application number | US-202117388712-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2021 |
| Priority date | Dec 28, 2020 |
| Publication date | May 2, 2023 |
| Grant date | May 2, 2023 |
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An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.
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What is claimed is: 1. An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water, the etching composition comprising: 1 wt % to 13 wt % of the inorganic acid compound, 0.1 wt % to 7 wt % of the sulfonic acid compound, 30 wt % to 55 wt % of the organic acid compound, 1 wt % to 17 wt % of the nitrate, 0.01 wt % to 0.09 wt % of the metal oxidizing agent, 0.1 wt % to 7 wt % of the amino acid compound, and a remainder of the etching composition being water. 2. The etching composition of claim 1 , wherein the sulfonic acid compound comprises at least one selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, amino methylsulfonic acid, and sulfamic acid. 3. The etching composition of claim 1 , wherein the organic acid compound comprises at least one selected from the group consisting of acetic acid, citric acid, glycolic acid malonic acid, lactic acid, tartaric acid, butanoic acid, formic acid, gluconic acid, oxalic acid, pentanoic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, glyceric acid, succinic acid, malic acid, isocitric acid, propenoic acid, iminodiacetic acid and ethylenediaminetetraacetic acid. 4. The etching composition of claim 1 , wherein the nitrate comprises at least one selected from the group consisting of sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, and aluminum nitrate. 5. The etching composition of claim 1 , wherein the metal oxidizing agent comprises at least one selected from the group consisting of ferric nitrate, ferric sulfate, copper, and copper sulfate. 6. The etching composition as claimed in claim 1 , wherein the amino acid compound comprises at least one selected from the group consisting of glycine, alanine, valine, leucine, isoleucine, serine, threonine, aspartic acid, cysteine, and methionine. 7. The etching composition of claim 1 , wherein the inorganic acid compound comprises nitric acid. 8. An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water, wherein: the inorganic acid compound comprises nitric acid, the sulfonic acid compound comprises methanesulfonic acid, the organic acid compound comprises citric acid and acetic acid, the nitrate comprises calcium nitrate and ammonium nitrate, the metal oxidizing agent comprises ferric nitrate, and the amino acid compound comprises glycine. 9. The etching composition of claim 8 , wherein the etching composition does not include ammonium bisulfate. 10. The etching composition of claim 8 , wherein the etching composition does not include phosphoric acid.
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