CVD Nanocrystalline Silicon Thermoelectric Material
US-2016372651-A1 · Dec 22, 2016 · US
US11637230B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11637230-B2 |
| Application number | US-201917254434-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2019 |
| Priority date | Jun 28, 2018 |
| Publication date | Apr 25, 2023 |
| Grant date | Apr 25, 2023 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The purpose of the present invention is to provide a thermoelectric conversion element having a film which not only maintains sufficient adhesion even when exposed to a high temperature but also exhibits excellent oxidation resistance and crack resistance. The problem is solved by a thermoelectric conversion element including a thermoelectric conversion component, in which the thermoelectric conversion component contains magnesium silicide and/or manganese silicide and is covered with a film containing Si and Zr.
Opening claim text (preview).
The invention claimed is: 1. A method for producing a thermoelectric conversion element, comprising a thermoelectric conversion component, comprising: a pretreatment step of contacting the thermoelectric conversion component with a pretreatment agent that comprises a phosphoric acid compound and water, and a film forming step of contacting the thermoelectric conversion component after the pretreatment step with a surface treatment agent that comprises Si and Zr ions to form a film comprising Si and Zr, wherein the thermoelectric conversion component comprises magnesium silicide and/or manganese silicide, and wherein a ratio (ZM/SM) of a Zr mass (ZM) to a Si mass (SM) in the film is in a range of 0.25 to 0.59. 2. The method for producing a thermoelectric conversion element according to claim 1 , wherein the surface treatment agent is obtained by mixing an alkali metal silicate (A), a cerium oxide-stabilized zirconium oxide (B), and a component (C) that comprises at least one selected from metal oxide particles and clay minerals except for the alkali metal silicate (A) and cerium oxide-stabilized zirconium oxide (B). 3. The method for producing a thermoelectric conversion element according to claim 1 , wherein the thermoelectric conversion component comprises polycrystalline magnesium silicide and/or polycrystalline manganese silicide. 4. A method for producing a thermoelectric conversion module, comprising a step of providing a plurality of the thermoelectric conversion element obtained by the method for producing a thermoelectric conversion element according to claim 1 , and a step of connecting the plurality of the thermoelectric conversion elements.
comprising compounds containing germanium or silicon · CPC title
Metal silicides (alloys C22) · CPC title
Manufacture or treatment · CPC title
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.