Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter

Patent metadata

Field	Value
Publication number	US-11637184-B2
Application number	US-201816473251-A
Country	US
Kind code	B2
Filing date	Jan 11, 2018
Priority date	Mar 6, 2017
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

A drift layer is formed of silicon carbide and has a first conductivity type. A trench bottom protective layer is provided on a bottom portion of a gate trench and has a second conductivity type. A depletion suppressing layer is provided between a side surface of the gate trench and the drift layer, extends from a lower portion of a body region up to a position deeper than the bottom portion of the gate trench, has the first conductivity type, and has an impurity concentration of the first conductivity type higher than that of the drift layer. The impurity concentration of the first conductivity type of the depletion suppressing layer is reduced as the distance from the side surface of the gate trench becomes larger.

First claim

The invention claimed is:

1. A silicon carbide semiconductor device, comprising:
a drift layer formed of silicon carbide, having a first conductivity type;
a body region provided on the drift layer, having a second conductivity type different from the first conductivity type;
a source region provided on the body region, having the first conductivity type;
a gate insulating film provided inside at least one gate trench reaching a position deeper than the body region in a depth direction, facing the body region and the source region, the gate trench having a width direction perpendicular to the depth direction;
a gate electrode provided inside the gate trench, facing the body region with the gate insulating film interposed therebetween;
a source electrode electrically connected to the source region;
a trench bottom protective layer being in contact with a bottom portion of the gate trench, having the second conductivity type with an impurity concentration higher than that of the body region; and
a depletion suppressing layer provided between a side surface of the gate trench and the drift layer in the width direction, being in contact with a side surface of the trench bottom protective layer, extending from a lower portion of the body region up to a position deeper than the bottom portion of the gate trench, having the first conductivity type, and having an impurity concentration of the first conductivity type higher than that of the drift layer, and
wherein the impurity concentration of the first conductivity type of the depletion suppressing layer is reduced as the distance from the side surface of the gate trench becomes larger, and
an impurity concentration of an entirety of the drift layer is lower than that of an entirety of the depletion suppressing layer, and
a width of the trench bottom protective layer is smaller than a width of the gate trench.

2. The silicon carbide semiconductor device according to claim 1 , further comprising:
a high impurity concentration region disposed between the body region and the depletion suppressing layer in the depth direction, being in contact with the drift layer, having the first conductivity type, and having an impurity concentration of the first conductivity type higher than that of the drift layer.

3. The silicon carbide semiconductor device according to claim 1 , wherein
the at least one gate trench includes a plurality of gate trenches and the plurality of gate trenches include a pair of gate trenches adjacent to each other in a cross section, and
the drift layer has a portion extending from a side surface of the depletion suppressing layer provided on one of the pair of gate trenches up to a side surface of the depletion suppressing layer provided on the other one of the pair of gate trenches.

4. A silicon carbide semiconductor device, comprising:
a drift layer formed of silicon carbide, having a first conductivity type;
a body region provided on the drift layer, having a second conductivity type different from the first conductivity type;
a source region provided on the body region, having the first conductivity type;
a gate insulating film provided inside at least one gate trench reaching a position deeper than the body region in a depth direction, facing the body region and the source region, the gate trench having a width direction perpendicular to the depth direction;
a gate electrode provided inside the gate trench, facing the body region with the gate insulating film interposed therebetween;
a source electrode electrically connected to the source region;
a trench bottom protective layer being in contact with a bottom portion of the gate trench, having the second conductivity type with an impurity concentration higher than that of the body, region;
a depletion suppressing layer provided between a side surface of the gate trench and the drill layer in the width direction, being in contact with a side surface of the trench bottom protective layer, extending from a lower portion of the body region up to a position deeper than the bottom portion of the gate trench, having the first conductivity type, and having an impurity concentration of the first conductivity type higher than that of the drift layer, and
a high impurity concentration region disposed between the body region and the depletion suppressing layer in the depth direction, being in contact with the drift layer, having the first conductivity type, and having an impurity concentration of the first conductivity type higher than that of the drift layer,
wherein the impurity concentration of the first conductivity type of the depletion suppressing layer is reduced as the distance from the side surface of the gate trench becomes larger, and
an impurity concentration of an entirety of the drift layer is lower than that of an entirety of the depletion suppressing layer.

Assignees

• Mitsubishi Electric Corp

Inventors

• Adachi Kohei
• Sugawara Katsutoshi
• Fukui Yutaka
• Hatta Hideyuki
• Tanaka Rina

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10D12/038

  having a recessed gate, e.g. trench-gate IGBTs · CPC title

• H10D12/035

  Etching a recess in the emitter region  (having a recessed gate H10D12/038) · CPC title

• H10D30/0297

  using recessing of the gate electrodes, e.g. to form trench gate electrodes · CPC title