Insulated gate bipolar transistor and manufacturing method therefor
US-2016307995-A1 · Oct 20, 2016 · US
Etching a recess in the emitter region (having a recessed gate H10D12/038)
Etching a recess in the emitter region (having a recessed gate H10D12/038) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D12/035 |
| Official title | {Etching a recess in the emitter region (having a recessed gate H10D12/038)} |
| Display label | Etching a recess in the emitter region (having a recessed gate H10D12/038) |
| Total patents | 432 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 58 |
| 2016 | 49 |
| 2017 | 57 |
| 2018 | 55 |
| 2019 | 38 |
| 2020 | 31 |
| 2021 | 33 |
| 2022 | 19 |
| 2023 | 27 |
| 2024 | 21 |
| 2025 | 37 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Vertical semiconductor device having semiconductor mesas with side walls and a PN-junction extending between the side walls
US-9412827-B2 · Aug 9, 2016 · US
Semiconductor device and method for manufacturing the same
US-2015372090-A1 · Dec 24, 2015 · US
Semiconductor Switching Device with Different Local Threshold Voltage
US-2015372086-A1 · Dec 24, 2015 · US
Semiconductor Switching Devices with Different Local Transconductance
US-2015372087-A1 · Dec 24, 2015 · US
Semiconductor device and super junction semiconductor device having semiconductor mesas
US-9219143-B2 · Dec 22, 2015 · US
Method of Manufacturing a Semiconductor Device Comprising Field Stop Zone
US-2015357229-A1 · Dec 10, 2015 · US
Power semiconductor device and method of manufacturing the same
US-9196702-B2 · Nov 24, 2015 · US
IGBT and method of manufacturing the same
US-9190503-B2 · Nov 17, 2015 · US
Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
US-2015325687-A1 · Nov 12, 2015 · US
Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
US-2015325688-A1 · Nov 12, 2015 · US
Method for manufacturing a vertical semiconductor device and vertical semiconductor device
US-9184281-B2 · Nov 10, 2015 · US
Method for Forming a Transistor Device having a Field Electrode
US-2015318361-A1 · Nov 5, 2015 · US
MOS type semiconductor device
US-9178049-B2 · Nov 3, 2015 · US
Semiconductor Device Having an Insulated Gate Bipolar Transistor Arrangement and a Method for Forming Such a Semiconductor Device
US-2015303190-A1 · Oct 22, 2015 · US
Vertical Semiconductor Device
US-2015303260-A1 · Oct 22, 2015 · US
Semiconductor Device and Super Junction Semiconductor Device Having Semiconductor Mesas
US-2015303298-A1 · Oct 22, 2015 · US
High voltage MOSFET diode reverse recovery by minimizing P-body charges
US-9166042-B2 · Oct 20, 2015 · US
Semiconductor device and method of manufacturing semiconductor device
US-2015295071-A1 · Oct 15, 2015 · US
Power superjunction mosfet device with resurf regions
US-2015287778-A1 · Oct 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D12/035?
- CPC H10D12/035 is the Cooperative Patent Classification code for “Etching a recess in the emitter region (having a recessed gate H10D12/038).”
- How many patents are filed under CPC H10D12/035 (Etching a recess in the emitter region (having a recessed gate H10D12/038))?
- Our database includes 432 publications tagged with this CPC code.
- Is patent activity under CPC H10D12/035 growing?
- Publication counts under this code: 21 in 2024 vs 37 in 2025 (latest complete years).