Production method of monocrystalline silicon based on an emissivity of a production apparatus

Patent metadata

Field	Value
Publication number	US-11634833-B2
Application number	US-202117530535-A
Country	US
Kind code	B2
Filing date	Nov 19, 2021
Priority date	Nov 25, 2020
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 mΩ·cm when the dopant is arsenic.

First claim

What is claimed is:

1. A production method of monocrystalline silicon using a monocrystalline silicon production machine comprising: a crucible configured to store a dopant-added melt comprising a silicon melt added with an n-type dopant in a form of arsenic, phosphorus, or antimony; a main chamber that houses the crucible; and a top chamber that covers an upper side of the main chamber, wherein
a resistivity of the monocrystalline silicon is from 1.5 mΩ·cm to 25 mΩ·cm when the dopant is arsenic, from 0.5 mΩ·cm to 25 mΩ·cm when the dopant is phosphorus, and from 8 mΩ·cm to 40 mΩ·cm when the dopant is antimony,
the method comprising:
measuring an emissivity of an inner wall surface of the top chamber; and
determining a target resistivity of the monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon, wherein
in determining the target emissivity on a crystal center axis at a position for starting a formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is equal to or less than a first reference value, the target resistivity is determined to be less than a predetermined set resistivity,
the first reference value of the emissivity is 0.4, and
the predetermined set resistivity is 3.0 mΩ·cm when the dopant is arsenic, 1.7 mΩ·cm when the dopant is phosphorus, and 15 mΩ·cm when the dopant is antimony.

2. A production method of monocrystalline silicon using a monocrystalline silicon production machine comprising: a crucible configured to store a dopant-added melt comprising a silicon melt added with an n-type dopant in a form of arsenic, phosphorus, or antimony; a main chamber that houses the crucible; and a top chamber that covers an upper side of the main chamber, wherein
a resistivity of the monocrystalline silicon is from 1.5 mΩ·cm to 25 mΩ·cm when the dopant is arsenic, from 0.5 mΩ·cm to 25 mΩ·cm when the dopant is phosphorus, and from 8 mΩ·cm to 40 mΩ·cm when the dopant is antimony,
the method comprising:
measuring an emissivity of an inner wall surface of the top chamber; and
determining a target resistivity of the monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon, wherein

in determining the target emissivity on a crystal center axis at a position for starting a formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is more than a first reference value and 0.8 or less, the target resistivity is determined to be equal to or more than a predetermined set resistivity,
the first reference value of the emissivity is 0.4, and

the predetermined set resistivity is 3.0 mΩ·cm when the dopant is arsenic, 1.7 mΩ·cm when the dopant is phosphorus, and 15 mΩ·cm when the dopant is antimony.

3. The production method of monocrystalline silicon according to claim 1 , further comprising cleaning the inner wall surface of the top chamber before the measuring.

4. The production method of monocrystalline silicon according to claim 1 , wherein, when the emissivity is less than a second reference value less than the first reference value, the top chamber is replaced or the inner wall surface of the top chamber is polished.

5. The production method of monocrystalline silicon according to claim 4 , wherein the second reference value of the emissivity is 0.2.

6. The production method of monocrystalline silicon according to claim 2 , further comprising cleaning the inner wall surface of the top chamber before the measuring.

7. The production method of monocrystalline silicon according to claim 2 , wherein, when the emissivity is less than a second reference value less than the first reference value, the top chamber is replaced or the inner wall surface of the top chamber is polished.

8. The production method of monocrystalline silicon according to claim 7 , wherein the second reference value of the emissivity is 0.2.

Assignees

• Sumco Corp

Inventors

• Kawazoe Shinichi
• Kotooka Toshirou
• Tsutsumi Yuuji

Classifications

• C30B35/00

  Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/10

  Crucibles or containers for supporting the melt · CPC title

• C30B15/26

  using television detectors; using photo or X-ray detectors · CPC title

• C30B15/20

  Controlling or regulating (controlling or regulating in general G05) · CPC title