Method of producing single crystal

Patent metadata

Field	Value
Publication number	US-10066313-B2
Application number	US-45841009-A
Country	US
Kind code	B2
Filing date	Jul 10, 2009
Priority date	Jul 11, 2008
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

First claim

What is claimed is:

1. A method for producing a plurality of single crystals by the Czochralski method by melting raw materials in a chamber and pulling up a plurality of single crystals from the resultant raw materials, comprising:
i) preparing a raw material melt by melting raw materials in the chamber, the chamber including a heater and heat shielding member disposed so as to face to a raw material melt surface;
ii) carrying out a seed crystal equilibration operation by bringing the seed crystal into contact with the raw material melt surface;
iii) growing a single crystal by inserting the seed crystal into the raw material melt and pulling up the seed crystal;
iv) repeating steps (i-iii) to grow a plurality of single crystals;
the method further comprising:
adjusting a distance between the raw material melt surface and the heat-shielding member after completion of each seed crystal equilibrium operation and just prior to a start of the growing of each single crystal, in response to a heater temperature at the time of completion of each seed crystal equilibration operation, the distance between the raw material melt surface and the heat-shielding member being adjusted based on a predetermined relation between the heater temperature and the distance, wherein the higher the heater temperature at the time of completion of the seed crystal equilibration operation is, the smaller the distance between the raw material melt surface and the heat-shielding member is set.

2. The method for producing a plurality of single crystals according to claim 1 , wherein the distance between the raw material melt surface and the heat-shielding member is adjusted just prior to the start of the growing of each single crystal, in response to the heater temperature at the time of completion of each seed crystal equilibration operation and a lag time required for completion of each seed crystal equilibration operation following the completion of raw material melting.

3. The method for producing a plurality of single crystals according to claim 2 , wherein the single crystal consists of a defect-free region in which neither COPs nor dislocation clusters exist.

4. The method for producing a plurality of single crystals according to claim 1 , wherein the single crystal consists of a defect-free region in which neither COPs nor dislocation clusters exist.

5. The method for producing a plurality of single crystals according to claim 1 , wherein a set point of the distance between the raw material melt surface and the heat-shielding member is decreased by 0.1 mm in response to an increase of the heater temperature at the time of completion of the seed crystal equilibration operation by 0.2° C.

6. A method for producing a plurality of single crystals by the Czochralski method by melting raw materials in a chamber and pulling up a plurality of single crystals from the resultant raw materials, comprising:
i) preparing a raw material melt by melting the raw materials in the chamber, the chamber including a heater and a heat shielding member disposed so as to face to a raw material melt surface;
ii) carrying out a seed crystal equilibration operation by bringing the seed crystal into contact with the raw material melt surface;
iii) growing a single crystal by inserting the seed crystal into the raw material melt and pulling up the seed crystal;
iv) repeating steps (i-iii) to grow a plurality of single crystals;
the method further comprising:
adjusting a distance between the raw material melt surface and the heat-shielding member after completion of each seed crystal equilibrium operation and just prior to a start of the growing of each single crystal, in response to a lag time required for completion of each seed crystal equilibration operation following completion of raw material melting, the distance between the raw material melt surface and the heat-shielding member being adjusted based on a predetermined relation between the lag time and the distance, wherein the longer the lag time is, the smaller the distance between the raw material melt surface and the heat-shielding member is set.

7. The method for producing a plurality of single crystals according to claim 6 , wherein the single crystal consists of a defect-free region in which neither COPs nor dislocation clusters exist.

8. The method for producing a plurality of single crystals according to claim 6 , wherein a set point of the distance between the raw material melt surface and the heat-shielding member is decreased by 0.1 mm in response to an increase of the lag time by 10 hours.

Assignees

• Hamada Ken
• Taguchi Hiroaki
• Egashira Kazuyuki
• Sumco Corp

Inventors

• Hamada Ken
• Taguchi Hiroaki
• Egashira Kazuyuki

Classifications

• C30B15/14 Primary

  Heating of the melt or the crystallised materials · CPC title

• C30B15/203

  the relationship of pull rate (v) to axial thermal gradient (G) · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/20

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B35/00

  Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title