Anti-corrosion conductive film and pulse bias alternation-based magnetron sputtering deposition method and application thereof

Patent metadata

Field	Value
Publication number	US-11634808-B2
Application number	US-201916964113-A
Country	US
Kind code	B2
Filing date	Jan 21, 2019
Priority date	Jan 24, 2018
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

First claim

What is claimed is:

1. A pulse bias alternation-based magnetron sputtering deposition method for making an anti-corrosion conductive film, comprising
sequentially forming an anti-corrosion protective layer, a stress transition layer, and a conducting layer on a surface of a substrate by deposition through a high-low pulse bias alternation method;
inhibiting columnar structures growth to reduce contact resistance in the anti-corrosion conductive film by the high-low pulse bias alternation method, wherein
the high-low pulse bias alternation method comprises multiple high-low bias alternations;
the anti-corrosion conductive film comprises carbon,
each of the multiple high-low bias alternations follows a step function and is implemented by applying a low pulse bias, the low pulse bias to carry out deposition for a deposition time T L at a low bias supply frequency, and then applying a high pulse bias, the high pulse bias to carry out deposition for a deposition time T H at a high bias supply frequency, the high pulse bias has an absolute value larger than that of the low pulse bias,
in the process of forming the stress transition layer by deposition, the absolute value of the high pulse bias is increased gradually from one high-low bias alternation to another, and
in the process of forming the stress transition layer by deposition, a bias value of the low pulse bias is −30V to −200V, a bias value of the high pulse bias is −200V to −800V, the number of the high-low bias alternations is 2-10, and the deposition time of the high pulse bias and the deposition time of the low pulse bias meets T H : T L =1:2-1:5.

2. The pulse bias alternation-based magnetron sputtering deposition method of an anti-corrosion conductive film according to claim 1 , wherein:
in the process of forming the anti-corrosion protective layer by deposition, bias values of the low pulse bias and the high pulse bias in each of the multiple high-low bias alternations are constant;
in the process of forming the stress transition layer, the bias value of the low pulse bias in each of the multiple high-low bias alternations is constant, and the absolute value of the high pulse bias in each of the multiple high-low bias alternations is increased gradually; and
in the process of forming the conducting layer by deposition, the bias values of the low pulse bias and the high pulse bias in the multiple high-low bias alternations are constant.

3. The pulse bias alternation-based magnetron sputtering deposition method of an anti-corrosion conductive film according to claim 1 , wherein the high-low pulse bias alternation method is optimized by adjusting one or more parameters selected from a group consisting of operating pressure, rotational speed, and bias supply frequency of the high-low pulse bias alternations.

4. The pulse bias alternation-based magnetron sputtering deposition method of an anti-corrosion conductive film according to claim 1 , wherein the anti-corrosion protective layer is prepared from a metallic element or an oxide of the metallic element,
the stress transition layer is prepared from a metallic compound consisting of a metallic element and an element X, and
the conducting layer is an amorphous carbon film or prepared from a metallic compound consisting of a metallic element and the element X,
wherein the element X is nitrogen, carbon or silicon, and
the metallic element of the anti-corrosion protective layer is identical to that of the stress transition layer and the conducting layer.

5. The pulse bias alternation-based magnetron sputtering deposition method of claim 1 , wherein the high pulse bias, in the process of forming the stress transition layer by deposition, increases incrementally by 100V or 150V.

6. The pulse bias alternation-based magnetron sputtering deposition method of claim 1 , wherein T L is 1 to 3, 4, 5, or 6 minutes.

7. The pulse bias alternation-based magnetron sputtering deposition method of claim 1 , wherein T H is 1 to or 2 minutes.

Assignees

• Univ Shanghai Jiaotong

Inventors

• Yi Peiyun
• Zhang Weixin
• Peng Linfa
• Lai Xinmin

Classifications

• C23C14/022

  by means of bombardment with energetic particles or radiation · CPC title

• C23C14/025

  Metallic sublayers · CPC title

• H01M8/0208

  Alloys · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• C23C14/0635

  Carbides · CPC title