Multilayer structure

Patent metadata

Field	Value
Publication number	US-11634529-B2
Application number	US-201816009256-A
Country	US
Kind code	B2
Filing date	Jun 15, 2018
Priority date	Jun 16, 2017
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

This disclosure relates to a multilayer structure containing: a substrate; a coupling layer deposited on the substrate; and a dielectric layer deposited on the coupling layer, wherein shear strength is increased by a factor of at least about 2 in the presence of the coupling layer compared to a multilayer in the absence of the coupling layer.

First claim

What is claimed is:

1. A multilayer structure, comprising:
a substrate;
a coupling layer deposited on the substrate, the coupling layer comprising at least one (meth)acrylate polymer, at least one cross-linker, and at least one initiator capable of inducing a cross-linking reaction; and
a dielectric layer deposited on the coupling layer, the dielectric layer comprising at least one fully imidized polyimide polymer, at least one cross-linker, and at least one initiator capable of inducing a cross-linking reaction;
wherein shear strength of the dielectric layer is increased by a factor of at least about 2 in the presence of the coupling layer compared to a multilayer structure without the coupling layer.

2. The multilayer structure of claim 1 , wherein the coupling layer increases the shear strength of the dielectric layer by a factor of at least about 3.

3. The multilayer structure of claim 1 , wherein the substrate comprises an epoxy molded compound.

4. The multilayer structure of claim 3 , wherein the substrate comprises embedded semiconductor devices.

5. The multilayer structure of claim 3 , wherein the multilayer structure further comprises at least one patterned metallic structure at a surface of the substrate.

6. The multilayer structure of claim 1 , wherein the cross-linker in the coupling layer comprises at least one functional group selected from the group consisting of a vinyl group, an allyl group, a vinyl ether group, a propenyl ether group, a (meth)acryloyl group, a SiH group, and a thiol group.

7. The multilayer structure of claim 1 , wherein the dielectric layer contains at least one additional polymer selected from a group consisting of polyimides, polybenzoxazoles, (meth)acrylate polymers, epoxy polymers, polyurethanes, polyamides, polyesters, polyethers, novolac resins, benzocyclobutene resins, polystyrenes, and a mixture thereof.

8. The multilayer structure of claim 7 , wherein the dielectric layer is a photosensitive layer.

9. A process for preparing the multilayer structures claim 1 , comprising:
(a) coating a substrate with a composition that forms the coupling layer to form a first coated substrate; and
(b) coating the first coated substrate with a composition that forms the dielectric layer.

10. The process of claim 9 , further comprising cross-linking the coupling layer by subjecting the first coated substrate to a step of baking or exposing to a source of light.

11. The process of claim 9 , where further comprising cross-linking the dielectric layer by subjecting the dielectric layer to a step of baking or exposing to a source of light.

12. The process of claim 9 , further comprising patterning the dielectric layer by a process selected from the group consisting of a lithographic process, a laser ablation process, and a plasma etching process.

13. A three dimensional object, comprising at least one multilayer structure formed by the process claim 12 .

14. A semiconductor device, comprising the three dimensional object of claim 13 .

15. A multilayer structure, comprising:
a substrate;
a cross-linked coupling layer deposited on the substrate, the coupling layer comprising at least one (meth)acrylate polymer; and
a cross-linked dielectric layer deposited on the coupling layer, the dielectric layer comprising at least one fully imidized polyimide polymer;
wherein shear strength of the dielectric layer is increased by a factor of at least about 2 in the presence of the coupling layer compared to a multilayer structure without the coupling layer.

16. The multilayer structure of claim 1 , wherein the at least one (meth)acrylate polymer is the only polymer in the coupling layer.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Malik Sanjay
• Reinerth William A

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W74/127 Primary

  characterised by arrangements for sealing or adhesion · CPC title

• H10W70/695

  Organic materials · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/614

  the multiple chips being integrally enclosed · CPC title