Solid-state imaging device, method for driving the same, and electronic device for improved autofocusing accuracy

Patent metadata

Field	Value
Publication number	US-11632494-B2
Application number	US-202117370482-A
Country	US
Kind code	B2
Filing date	Jul 8, 2021
Priority date	Sep 10, 2014
Publication date	Apr 18, 2023
Grant date	Apr 18, 2023

Abstract

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

First claim

What is claimed:

1. A light detecting device, comprising:
a first photoelectric conversion portion disposed above a semiconductor substrate, the first photoelectric conversion portion comprising:
a photoelectric conversion film comprising a first part and a second part;
a first electrode disposed below the first part;
a second electrode disposed below the second part; and
a third electrode disposed above at least one of the first part and the second part;

an on-chip lens disposed above the first photoelectric conversion portion;
a first conductive plug electrically coupled to the first electrode, at least a part of the first conductive plug being disposed in the semiconductor substrate;
a second conductive plug electrically coupled to the second electrode, at least a part of the second conductive plug being disposed in the semiconductor substrate; and
a second photoelectric conversion portion disposed in the semiconductor substrate,
wherein at least a part of the second photoelectric conversion portion is disposed between the first conductive plug and the second conductive plug in a cross-sectional view.

2. The light detecting device according to claim 1 , wherein the on-chip lens overlaps the first part and the second part in a plan view.

3. The light detecting device according to claim 1 , wherein the on-chip lens overlaps the second photoelectric conversion portion in a plan view.

4. The light detecting device according to claim 1 , wherein the first photoelectric conversion portion is configured to photoelectrically convert light of a first color and the second photoelectric conversion portion is configured to photoelectrically convert light of a second color which is different from the first color.

5. The light detecting device according to claim 4 , wherein the first color is green and the second color is blue or red.

6. The light detecting device according to claim 1 , wherein a set of phase difference signals is configured to be acquired from the first part and the second part.

7. The light detecting device according to claim 6 , wherein an image signal is configured to be acquired from the first part and the second part.

8. The light detecting device according to claim 1 , further comprising first and second semiconductor regions disposed in the semiconductor substrate,
wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface, the first surface being disposed between the first photoelectric conversion portion and the second surface,
wherein the first semiconductor region is electrically coupled to the first conductive plug and disposed at the second surface, and
wherein the second semiconductor region is electrically coupled to the second conductive plug and disposed at the second surface.

9. The light detecting device according to claim 8 , further comprising a third semiconductor region, wherein the third semiconductor region is electrically coupled to the first semiconductor region through a first transistor and electrically coupled to the second semiconductor region through a second transistor.

10. The light detecting device according to claim 9 , further comprising a third transistor, wherein a gate of the third transistor is electrically coupled to the third semiconductor region.

11. The light detecting device according to claim 10 , wherein the third semiconductor region is disposed in the semiconductor substrate at the second surface and wherein the first, second, and third transistors are disposed at the second surface.

12. The light detecting device according to claim 1 , further comprising a first transistor,
wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface, the first surface being disposed between the first photoelectric conversion portion and the second surface, and
wherein the first transistor is electrically coupled to the first conductive plug and disposed at the second surface.

13. The light detecting device according to claim 12 , wherein the first transistor is electrically coupled to the second conductive plug.

14. The light detecting device according to claim 12 , further comprising a second transistor disposed at the second surface,
wherein the second transistor is electrically coupled to the second conductive plug.

15. An electronic device, comprising:
an optical unit;
a light detecting device including:
a first photoelectric conversion portion disposed above a semiconductor substrate, the first photoelectric conversion portion comprising:
a photoelectric conversion film comprising a first part and a second part;
a first electrode disposed below the first part;
a second electrode disposed below the second part; and
a third electrode disposed above at least one of the first part and the second part;

an on-chip lens disposed above the first photoelectric conversion portion;
a first conductive plug electrically coupled to the first electrode, at least a part of the first conductive plug being disposed in the semiconductor substrate;
a second conductive plug electrically coupled to the second electrode, at least a part of the second conductive plug being disposed in the semiconductor substrate; and
a second photoelectric conversion portion disposed in the semiconductor substrate,
wherein at least a part of the second photoelectric conversion portion is disposed between the first conductive plug and the second conductive plug in a cross-sectional view; and

a signal processing circuit.

16. The electronic device according to claim 15 , wherein the on-chip lens overlaps the first part and the second part in a plan view.

17. The electronic device according to claim 15 , wherein the on-chip lens overlaps the second photoelectric conversion portion in a plan view.

18. The electronic device according to claim 15 , wherein the first photoelectric conversion portion is configured to photoelectrically convert light of a first color and the second photoelectric conversion portion is configured to photoelectrically convert light of a second color which is different from the first color.

19. The electronic device according to claim 15 , wherein a set of phase difference signals is configured to be acquired from the first part and the second part.

20. The electronic device according to claim 19 , wherein an image signal is configured to be acquired from the first part and the second part.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Hatano Keisuke
• Koga Fumihiko
• Yamaguchi Tetsuji
• Izawa Shinichiro

Classifications

• H10F39/8063

  Microlenses · CPC title

• H10F39/8057

  Optical shielding · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/811 Primary

  Interconnections · CPC title