Piezoelectric MEMS devices and methods of forming thereof

Patent metadata

Field	Value
Publication number	US-11631800-B2
Application number	US-201916542347-A
Country	US
Kind code	B2
Filing date	Aug 16, 2019
Priority date	Aug 16, 2019
Publication date	Apr 18, 2023
Grant date	Apr 18, 2023

Abstract

In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.

First claim

What is claimed is:

1. A microelectromechanical (MEMS) device comprising:
a substrate with a cavity;
a hybrid active structure disposed over the substrate and the cavity, the hybrid active structure having an anchor region and a free region, wherein the hybrid active structure is connected to the substrate at least at the anchor region, and wherein the hybrid active structure comprises:
a mechanical portion, including a first mechanical portion segment in the anchor region and a second mechanical portion segment in the free region, the first and second mechanical portion segments being separate from each other; and
a piezoelectric stack portion for generating electrical signal by piezoelectric effect, wherein the piezoelectric stack portion comprises a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer;
wherein the piezoelectric stack portion has a first piezoelectric stack segment overlapping the first mechanical portion segment, a second piezoelectric stack segment overlapping the second mechanical portion segment, and a third piezoelectric stack segment between the first and second piezoelectric stack segments, the third piezoelectric stack segment being exposed to the cavity.

2. The MEMS device of claim 1 , wherein the piezoelectric stack portion further comprises a seed piezoelectric layer disposed under the first electrode layer, wherein the seed piezoelectric layer contacts the mechanical portion.

3. The MEMS device of claim 1 , wherein the first electrode layer contacts the mechanical portion.

4. The MEMS device of claim 1 , wherein the hybrid active structure is a cantilevered beam, wherein the second mechanical portion segment is exposed to the cavity and directly connected to only the piezoelectric stack portion and forms a free end of the cantilevered beam.

5. The MEMS device of claim 1 , wherein the hybrid active structure is a cantilevered beam, and the hybrid active structure comprises the piezoelectric stack portion connected to the substrate at the anchor region and a second piezoelectric stack portion respectively connected to the substrate at a second anchor region, wherein the second mechanical portion segment is disposed in between the piezoelectric stack portion and the second piezoelectric stack portion.

6. The MEMS device of claim 1 , wherein the anchor region further comprises via contacts disposed through the piezoelectric stack portion, wherein the via contacts electrically connect the first electrode layer and the second electrode layer.

7. The MEMS device of claim 1 , wherein the second piezoelectric stack segment overlaps the second mechanical portion segment in the free region in a range from about 1 um to about 50 um.

8. The MEMS device of claim 1 , wherein the third piezoelectric stack segment separates the first mechanical portion segment and the second mechanical portion segment.

9. The MEMS device of claim 1 , wherein an edge of the second mechanical portion segment in an overlap region with the second piezoelectric stack segment of the hybrid active structure has a sloped portion with an angled profile and a substantially flat portion with a substantially flat profile.

10. The MEMS device of claim 9 , wherein the sloped portion with the angled profile is in a range from about 5° to about 45° with respect to the substantially flat portion.

11. The MEMS device of claim 1 , wherein the hybrid active structure is a membrane, wherein the second mechanical portion segment forms a center of the membrane.

12. The MEMS device of claim 11 , wherein the hybrid active structure forms a diaphragm of an acoustic sensor.

13. A method of forming a MEMS device, comprising:
providing a substrate with a cavity; and
arranging a hybrid active structure over the substrate and the cavity, the hybrid active structure having an anchor region and a free region, wherein the hybrid active structure is connected to the substrate at least at the anchor region, and wherein the hybrid active structure comprises:
a mechanical portion, including a first mechanical portion segment in the anchor region and a second mechanical portion segment in the free region, the first and second mechanical portion segments being separate from each other; and
a piezoelectric stack portion for generating electrical signal by piezoelectric effect, wherein the piezoelectric stack portion comprises a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer;
wherein the piezoelectric stack portion has a first piezoelectric stack segment overlapping the first mechanical portion segment, a second piezoelectric stack segment overlapping the second mechanical portion segment, and a third piezoelectric stack segment between the first and second piezoelectric stack segments, the third piezoelectric stack segment being exposed to the cavity.

14. The method of claim 13 , wherein the piezoelectric stack portion further comprises a seed piezoelectric layer arranged under the first electrode layer, wherein the seed piezoelectric layer contacts the mechanical portion.

15. The method of claim 13 , wherein the first electrode layer contacts the mechanical portion.

16. The method of claim 13 , wherein an edge of the second mechanical portion segment in an overlap region with the second piezoelectric stack segment of the hybrid active structure has a sloped portion with an angled profile and a substantially flat portion with a substantially flat profile.

17. The method of claim 13 , wherein the hybrid active structure is a cantilevered beam, wherein the second mechanical portion segment is exposed to the cavity and directly connected to only the piezoelectric stack portion and forms a free end of the cantilevered beam.

18. The method of claim 13 , wherein the hybrid active structure is a cantilevered beam, and the hybrid active structure comprises the piezoelectric stack portion connected to the substrate at the anchor region and a second piezoelectric stack portion connected to the substrate at a second anchor region, wherein the second mechanical portion segment is formed between the piezoelectric stack portion and the second piezoelectric stack portion.

19. The method of claim 13 , wherein the hybrid active structure is a membrane, wherein the second mechanical portion segment forms a center of the membrane.

20. The method of claim 13 , further comprising forming via contacts in the anchor region, wherein the via contacts electrically connect the first electrode layer and the second electrode layer of the piezoelectric stack portion.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Xia jia jie
• Nagarajan Ranganathan
• Kallupalathinkal Chandran Bevita
• Gehm Miles Jacob

Classifications

• H10N30/082

  by etching, e.g. lithography · CPC title

• H10N30/302

  Sensors · CPC title

• H10N30/063

  Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts · CPC title

• H10N30/874

  embedded within piezoelectric or electrostrictive material, e.g. via connections · CPC title

• H10N30/304

  Beam type · CPC title