Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad

Patent metadata

Field	Value
Publication number	US-11628535-B2
Application number	US-201916584145-A
Country	US
Kind code	B2
Filing date	Sep 26, 2019
Priority date	Sep 26, 2019
Publication date	Apr 18, 2023
Grant date	Apr 18, 2023

Abstract

A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less;

wherein R 11 and R 12 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 11 and R 12 is fluorine, L is a C 1 -C 5 alkylene group or —O—, R 13 and R 14 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 13 and R 14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

First claim

What is claimed is:

1. A polishing pad comprising a polyurethane,
wherein the polyurethane comprises a fluorinated repeating unit represented by Formula 1, and the fluorinated repeating unit is present in an amount of 0.1% or greater by weight based on the total weight of the polyurethane, and
wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less;

wherein R 11 and R 12 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 11 and R 12 is fluorine, L is a C 1 -C 5 alkylene group or —O—, R 13 and R 14 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 13 and R 14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

2. The polishing pad according to claim 1 , wherein the polyurethane comprises in its main chain a repeating unit represented by Formula 2-1 or 2-2:

wherein R 11 and R 12 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 11 and R 12 is fluorine, L is a C 1 -C 5 alkylene group or —O—, R 13 and R 14 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 13 and R 14 is fluorine, n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0, and R 21 is —Si(R 15 )(R 16 )(R 31 )—, wherein R 15 and R 16 are each independently hydrogen or a C 1 -C 10 alkyl group and R 31 is —(CH 2 ) m1 — or —(CH 2 ) m2 —(OCH 2 CH 2 ) m3 —, wherein m1, m2, and m3 are each independently an integer from 1 to 20.

3. The polishing pad according to claim 1 , wherein a difference of a contact angle of the polishing pad for pure water and a contact angle of the polishing pad for a fumed silica slurry is 1.5 to 5, as calculated by Equation 1:
Ad (p-f) (%)=[100×( Ap−Af )]/ Ap   [Equation 1]

where Ap is the contact angle for pure water, Af is the contact angle for a fumed silica slurry, and Ad (p-f) is the difference between the contact angles.

4. The polishing pad according to claim 1 , wherein the polyurethane is in the form of a foamed body, and the foamed body has an average pore size of 10 to 30 μm.

5. The polishing pad according to claim 1 , wherein polyurethane has a Shore D hardness of 55 to 65.

6. The polishing pad according to claim 1 , wherein the polishing pad comprises a top pad and sub-pad disposed on the top pad,
wherein the top pad comprises the polyurethane and the sub-pad comprises a non-woven fabric or suede type.

7. A polishing pad comprising a top pad as a polyurethane polishing layer,
wherein the polyurethane polishing layer comprises a foamed body of a urethane composition,
wherein the urethane composition comprises a urethane prepolymer, a curing agent, and a foaming agent,
wherein the urethane prepolymer is a copolymer of a prepolymer composition comprising an isocyanate compound, an alcohol compound, and a fluorinated compound,
wherein the fluorinated compound comprises a fluorinated repeating unit and comprises at least one end terminated with a hydroxyl, amine or epoxy group, and
wherein the fluorinated repeating unit is present in an amount of 0.1% or greater by weight based on the total weight of the polyurethane; and the fluorinated repeating unit is represented by Formula 1:

wherein R 11 and R 12 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 11 and R 12 is fluorine, L is a C 1 -C 5 alkylene group or —O—, R 13 and R 14 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 13 and R 14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

8. The polishing pad according to claim 7 , wherein the fluorinated compound is present in an amount of 0.1 to 5% by weight, based on the total weight of the prepolymer composition.

9. The polishing pad according to claim 7 , wherein the top pad reduces a number of defects of a silicon wafer after polishing by 80% or more compared to polyurethane foamed body without the fluorinated repeating unit represented by Formula 1.

10. The polishing pad according to claim 7 , wherein the fluorinated compound is represented by Formula 3:

wherein R 11 and R 12 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 11 and R 12 is fluorine, L is a C 1 -C 5 alkylene group or —O—, R 13 and R 14 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 13 and R 14 is fluorine, n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0, R 21 and R 22 are each independently —(CH 2 ) m1 — or —(CH 2 ) m2 —(OCH 2 CH 2 ) m3 —, wherein m1, m2, and m3 are each independently an integer from 1 to 20, and R 41 and R 42 are each independently a hydroxyl, amine or epoxy group.

11. The polishing pad according to claim 7 , wherein the % NCO of the prepolymer is from 8 to 12% by weight.

12. A method for manufacturing a polishing pad, comprising
i) preparing a polyurethane in a form of a foamed body with polymerizing a urethane composition,
ii) manufacturing a top pad comprising the polyurethane, and
iii) fixing the top pad to a sub-pad by lamination to prepare the polishing pad,
wherein the urethane composition comprises a urethane prepolymer, a curing agent, and a foaming agent, and
wherein the polyurethane comprises a fluorinated repeating unit represented by Formula 1, the fluorinated repeating unit is present in an amount of 0.1% or greater by weight based on the total weight of the polyurethane, and the polyurethane contains the fluorinated repeating unit within the main chain thereof;

wherein R 11 and R 12 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 11 and R 12 is fluorine, L is a C 1 -C 5 alkylene group or —O—, R 13 and R 14 are each independently selected from the group consisting of hydrogen, C 1 -C 10 alkyl groups, and fluorine, with the proviso that at least one of R 13 and R 14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

13. The method according to claim 12 , wherein the urethane prepolymer is prepared by a method comprising
allowing a prepolymer composition to react at 50 to 120° C., and the % NCO of the urethane prepolymer is from 8 to 12% by weight,

Assignees

• Skc Solmics Co Ltd

Inventors

• Ahn Jaein
• Seo Jang Won
• Yun Jong Wook
• Yun Sunghoon
• Heo Hye Young
• Moon Su Young

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• C08G18/7621

  being toluene diisocyanate including isomer mixtures · CPC title

• C08G18/3812

  having fluorine atoms · CPC title

• C08L75/04

  Polyurethanes · CPC title