Methods of producing optically-finished thin diamond substrates or windows of high aspect ratio

US11618945B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11618945-B2
Application numberUS-201916663423-A
CountryUS
Kind codeB2
Filing dateOct 25, 2019
Priority dateApr 16, 2015
Publication dateApr 4, 2023
Grant dateApr 4, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio≥100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of forming a free-standing diamond film comprising: (a) CVD growing on a surface of a substrate a diamond film having an aspect ratio ≥100 and a thickness between 150-999 microns, wherein the grown diamond film has a nucleation side surface and a growth side surface opposite the nucleation side surface and the nucleation side surface of the grown diamond film has an optical finish having a surface roughness (Ra)≤50 nm; (b) removing the substrate from the grown diamond film; and (c) polishing the surface of the substrate to an optical finish having a surface roughness (Ra)≤20 nm wherein the polishing is completed prior to the CVD growing step, wherein the method further comprises the step of polishing the growth side surface to an optical finish having a surface roughness (Ra)≤50 nm and the polishing the growth side surface step occurs after the growing step and prior to the removing step. 2. The method of claim 1 , wherein the substrate has a thickness ≥2 mm. 3. The method of claim 1 , wherein, prior to step (a), the surface of the substrate is seeded with diamond particles. 4. The method of claim 3 , wherein the substrate is seeded with diamond particles via at least one of the following processes: (1) ultrasonic treatment of the substrate in a ultrasonic bath comprised of a submicron or micron-sized diamond powder in a liquid suspension solution; and (2) ultrasonic treatment of the substrate in a ultrasonic bath comprised of nano-crystal diamond powder having an average particle size <100 nm in a liquid suspension solution. 5. The method of claim 4 , wherein the liquid suspension solution comprises one or more of the following: water, alcohol, hydrocarbon, and organic solvent. 6. The method of claim 5 , wherein the substrate is seeded with diamond particles via a least one of the following processes: (1) ultrasonic treatment of the substrate in a bath of aqueous diamond slurries or organic diamond slurries, or (2) rubbing the substrate with diamond powders. 7. The method of claim 1 , wherein the largest dimension of the substrate is a diameter of the substrate. 8. The method of claim 1 , wherein the substrate has a thickness ≥8 mm. 9. The method of claim 1 , further including, prior to step (a), polishing the surface of the substrate to an optical finish having a surface roughness (Ra)≤2 nm. 10. The method of claim 1 , wherein polishing the growth side surface includes polishing the growth side to an optical finish having a surface roughness (Ra)≤30 nm. 11. The method of claim 1 , wherein polishing the growth side surface includes polishing the growth side to an optical finish having a surface roughness (Ra)≤20 nm. 12. The method of claim 1 , wherein polishing the growth side surface includes polishing the growth side to an optical finish having a surface roughness (Ra)≤15 nm. 13. The method of claim 1 , wherein polishing the growth side surface includes polishing the growth side to an optical finish having a surface roughness (Ra)≤10 nm. 14. The method of claim 1 , wherein the diamond film has a diamond nucleation density ≥1.0×10 5 /cm 2 . 15. The method of claim 1 , wherein the surface of the substrate has a shape of at least one of a cone, a pyramid, an asphere, a parabola, a hyperbola, and a non-planar surface. 16. The method of claim 1 , wherein the surface of the substrate is planar.

Assignees

Inventors

Classifications

  • Self-sustaining carbon mass or layer with impregnant or other layer · CPC title

  • After-treatment · CPC title

  • using microwave discharges · CPC title

  • on temporary substrates, e.g. substrates subsequently removed by etching · CPC title

  • Pretreatment of the material to be coated (C23C16/04 takes precedence) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11618945B2 cover?
In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio≥100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a th…
Who is the assignee on this patent?
Ii Vi Delaware Inc
What technology area does this patent fall under?
Primary CPC classification C23C16/274. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 04 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).