Resist composition and patterning process

US11614688B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11614688-B2
Application numberUS-202016799129-A
CountryUS
Kind codeB2
Filing dateFeb 24, 2020
Priority dateMar 22, 2019
Publication dateMar 28, 2023
Grant dateMar 28, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition.

First claim

Opening claim text (preview).

The invention claimed is: 1. A chemically-amplified negative resist composition comprising: (A) an acid generator containing an onium salt(s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2), wherein R 1 represents a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, a hydroxy group, an amino group, a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms optionally containing a fluorine atom, a chlorine atom, a bromine atom, a hydroxy group, an amino group, or an alkoxy group, an alkoxy group having 1 to 20 carbon atoms, an acyloxy group having 2 to 20 carbon atoms, —NR 7 —C(═O)—R 8 , or —NR 7 —C(═O)—O—R 8 ; R 7 represents a hydrogen atom or a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms optionally containing a halogen atom, a hydroxy group, an alkoxy group, an acyl group, or an acyloxy group; R 8 represents a linear, branched, or cyclic alkyl group having 1 to 16 carbon atoms or alkenyl group having 2 to 16 carbon atoms, an aryl group having 6 to 12 carbon atoms, or an aralkyl group having 7 to 12 carbon atoms, and optionally contains a halogen atom, a hydroxy group, an alkoxy group, an acyl group, or an acyloxy group; Z represents a single bond or a divalent linking group having 1 to 20 carbon atoms when “p” is 1, or a trivalent or tetravalent linking group having 1 to 20 carbon atoms when “p” is 2 or 3, the linking groups optionally containing an oxygen atom, a sulfur atom, or a nitrogen atom; Rf 1 to Rf 4 each independently represent a hydrogen atom, a fluorine atom, or a trifluoromethyl group, at least one of Rf 1 to Rf 4 is a fluorine atom or a trifluoromethyl group, and Rf 1 and Rf 2 optionally bond with each other to form a carbonyl group; R 2 , R 3 , R 4 , R 5 and R 6 each independently represent a linear, branched, or cyclic alkyl group or oxoalkyl group having 1 to 12 carbon atoms, a linear, branched, or cyclic alkenyl group or oxoalkenyl group having 2 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms, and some or all of hydrogen atoms of these groups are optionally substituted with a hydroxy group, a carboxyl group, a halogen atom, a cyano group, an amide group, a nitro group, a sultone group, a sulfone group, or a sulfonium salt-containing group, and carbon atoms of these groups are optionally interposed by an ether group, an ester group, a carbonyl group, a carbonate group, or a sulfonic acid ester group; R 2 and R 3 optionally bond with each other to form a ring with a sulfur atom bonded to R 2 and R 3 ; “m” represents an integer of 1 to 5; “n” represents an integer of 0 to 3; and “p” represents an integer of 1 to 3, wherein R A represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; R 11 and R 12 each independently represent a halogen atom, an acyloxy group having 2 to 8 carbon atoms optionally halogen-substituted, an alkyl group having 1 to 6 carbon atoms optionally halogen-substituted, or an alkoxy group having 1 to 6 carbon atoms optionally halogen-substituted; A 1 represents a single bond or a linear, branched, or cyclic alkylene group having 1 to 10 carbon atoms and optionally having an ether bond interposed in a carbon-carbon bond; W 1 represents a hydrogen atom, a monovalent aromatic group optionally having a substituent, or an aliphatic monovalent hydrocarbon group having 1 to 10 carbon atoms optionally having an ether bond, a carbonyl group, or a carbonyloxy group interposed in a carbon-carbon bond; Rx and Ry each independently represent a hydrogen atom, an alkyl group having 1 to 15 carbon atoms optionally substituted with a hydroxy group or an alkoxy group, or a monovalent aromatic group optionally having a substituent, given that not both of Rx and Ry are hydrogen atoms simultaneously, and Rx and Ry optionally bond with each other to form a ring with a carbon atom bonded to Rx and Ry; t 1 represents 0 or 1; x 1 represents an integer of 0 to 2; “a” represents an integer satisfying 0≤a≤5+2x 1 −b; “c” represents an integer satisfying 0≤c≤5+2x 1 −d; and “b” and “d” each represent an integer of 1 to 3. 2. The chemically-amplified negative resist composition according to claim 1 , wherein the base polymer further contains at least one repeating unit selected from a repeating unit shown by the following formula (B3) and a repeating unit shown by the following formula (B4): wherein R 13 and R 14 each independently represent a hydroxy group, a halogen atom, an acetoxy group, an alkyl group having 1 to 8 carbon atoms optionally halogen-substituted, a primary alkoxy group having 1 to 8 carbon atoms optionally halogen-substituted, a secondary alkoxy group having 2 to 8 carbon atoms, an acyloxy group having 2 to 8 carbon atoms optionally halogen-substituted, or an alkylcarbonyloxy group having 2 to 8 carbon atoms optionally halogen-substituted; and “e” and “f” each independently represent an integer of 0 to 4. 3. The chemically-amplified negative resist composition according to claim 2 , wherein the base polymer contains a repeating unit shown by the following formula (B5) and a repeating unit shown by the following formula (B6): wherein R A , Rx, Ry, W 1 , “b”, and “d” are as defined above. a crosslinking agent. 4. The chemically-amplified negative resist composition according to claim 3 , further comprising (C) a crosslinking agent. 5. A resist patterning process using the chemically-amplified negative resist composition according to claim 4 , comprising steps of: forming a resist film by using the chemically-amplified negative resist composition on a substrate to be processed; irradiating the resist film with a high energy beam to form a pattern; and developing the resist film by using an alkaline developer. 6. A resist patterning process using the chemically-amplified negative resist composition according to claim 3 , comprising steps of: forming a resist film by using the chemically-amplified negative resist composition on a substrate to be processed; irradiating the resist film with a high energy beam to form a pattern; and developing the resist film by using an alkaline developer. 7. The chemically-amplified negative resist composition according to claim 2 , further comprising (C) a crosslinking agent. 8. A resist patterning process using the chemically-amplified negative resist composition according to claim 7 , comprising steps of: forming a resist film by using the chemically-amplified negative resist composition on a substrate to be processed; irradiating the resist film with a high energy beam to form a pattern; and developing the resist film by using an alkaline developer. 9. A resist patterning process using the chemically-amplified negative resist composition according to claim 2 , comprising steps of: forming a resist film by using the chemically-amplified negative resist composition on a substrate to be processed; irradiating the resist film with a high energy beam to form a pattern; and developing the resist film by using an alkaline developer. 10. The resist patterning process according to claim 9 , wherein the high energy beam is an electron beam or an extre

Assignees

Inventors

Classifications

  • Phenols or alcohols · CPC title

  • Coating on a rotating support, e.g. using a whirler or a spinner · CPC title

  • the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers · CPC title

  • Aqueous alkaline compositions · CPC title

  • G03F7/0382Primary

    the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11614688B2 cover?
A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivit…
Who is the assignee on this patent?
Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification G03F7/0382. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).