Area selective nanoscale-thin layer deposition via precise functional group lithography

Patent metadata

Field	Value
Publication number	US-11613807-B2
Application number	US-202117387185-A
Country	US
Kind code	B2
Filing date	Jul 28, 2021
Priority date	Jul 29, 2020
Publication date	Mar 28, 2023
Grant date	Mar 28, 2023

Abstract

A method of depositing a nanoscale-thin film onto a substrate is disclosed. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.

First claim

The invention claimed is:

1. A method of depositing a nanoscale-thin film in a preselected area on a substrate, the method comprising:
depositing a layer of a functionalizing molecule onto or adjacent to a first surface of the substrate;
functionalizing the first surface of the substrate by focusing a source of ionizing radiation onto the layer of the functionalizing molecule to create a desired pattern of functionality on the substrate;
removing the layer of the functionalizing molecule; and
depositing a nanoscale-thin film onto the functionalized first surface of the substrate;
wherein the functionalizing molecule is in a solid or gaseous state;
wherein the functionalizing molecule comprises water.

2. The method of claim 1 , wherein the water is in a solid state and comprises ice.

3. The method of claim 2 , wherein removing the layer of functionalizing molecule comprises warming the substrate above the melting point of water or submerging the water in a wash solution.

4. The method of claim 1 , wherein the water is in a gaseous state and comprises water vapor.

5. The method of claim 4 , wherein removing the layer of functionalizing molecule comprises allowing the water vapor to dissipate.

6. The method of claim 1 , wherein the source of ionizing radiation comprises an electron beam.

7. The method of claim 6 , wherein the electron beam comprises a scanning electron microscope.

8. The method of claim 1 , wherein the substrate comprises a graphene substrate.

9. The method of claim 1 , wherein the nanoscale-thin film comprises aluminum oxide.

10. The method of claim 1 , wherein the functionalizing step comprises rastering an electron beam along the layer of functionalizing molecule to create the desired pattern of functionality on the substrate.

11. The method of claim 10 , wherein the desired pattern of functionality on the substrate comprises hydroxyl radical functionality.

12. The method of claim 10 , wherein the nanoscale-thin film deposition is limited to the pattern of functionality on the substrate.

13. A method of functionalizing a preselected area on a substrate, the method comprising:
depositing a layer of a functionalizing molecule onto or adjacent to a first surface of the substrate;
focusing a source of ionizing radiation onto the layer of functionalizing molecule; and
rastering the source of ionizing radiation along the layer of functionalizing molecule to create a desired pattern of functionality on the substrate;
wherein the source of ionizing radiation dissociates the functionalizing molecule through radiolysis, and the reaction products of the radiolysis functionalize the substrate; and
wherein the functionalizing molecule is in a solid or gaseous state.

14. The method of claim 13 , wherein the functionalizing molecule comprises water.

15. The method of claim 14 , wherein the water is in a solid state and comprises ice.

16. The method of claim 14 , wherein the water is in a gaseous state and comprises water vapor.

17. The method of claim 13 , wherein the source of ionizing radiation comprises an electron beam.

18. The method of claim 13 , wherein the desired pattern of functionality on the substrate comprises hydroxyl radical functionality.

19. The method of claim 13 , wherein the substrate comprises a graphene substrate.

Assignees

• Univ Missouri

Inventors

• Maschmann Matthew R
• Young Matthias J

Classifications

• C23C16/047 Primary

  using irradiation by energy or particles · CPC title

• C23C16/20

  Deposition of aluminium only · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/0263 Primary

  Irradiation with laser or particle beam · CPC title