Fin bulk acoustic resonator technology for UHF and SHF signal processing

Patent metadata

Field	Value
Publication number	US-11611328-B2
Application number	US-201816637496-A
Country	US
Kind code	B2
Filing date	Aug 17, 2018
Priority date	Aug 17, 2017
Publication date	Mar 21, 2023
Grant date	Mar 21, 2023

Abstract

A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.

First claim

What is claimed is:

1. A Fin Bulk Acoustic Resonator (FinBAR), comprising:
a substrate;
a fin formed on the substrate;
an inner electrode disposed on the fin;
a piezoelectric layer disposed on the inner electrode;
an outer electrode disposed on the piezoelectric layer;
a first portion formed on the substrate;
a second portion formed on the substrate;
a first connection portion connecting the first portion to the fin; and
a second connection portion connecting the second portion to the fin,
wherein the fin is characterized with a width and a height, and wherein the height of the fin is larger than the width of the fin.

2. The Fin BAR according to claim 1 , wherein the fin is formed integrally with the substrate.

3. The FinBAR according to claim 1 , further comprising a flank portion on the substrate, wherein the flank portion surrounds the fin, the first portion, the first connecting portion, the second portion, and the second connecting portion with a trench.

4. The FinBAR according to claim 3 , further comprising a shadow mask disposed on the flank portion and into the trench.

5. The FinBAR according to claim 1 , further comprising a first electrode disposed on the first portion and a second electrode disposed on the second portion, wherein the first electrode is connected to the inner electrode and the second electrode is connected to the outer electrode.

6. The FinBAR according to claim 5 , wherein the first electrode is a ground electrode and the second electrode is an RF electrode.

7. The FinBAR according to claim 1 , wherein the inner electrode comprises an inner side metal disposed on a fin side surface and an inner top metal disposed on a fin top surface.

8. The FinBAR according to claim 7 , wherein the outer electrode comprises an outer side metal facing the inner side metal and an outer top metal facing the inner top metal.

9. The FinBAR according to claim 8 , wherein the outer top metal is connected to the second electrode, and wherein the outer top metal exposes a top surface of the piezoelectric layer.

10. The FinBAR according to claim 7 , wherein the piezoelectric layer has a C-axis perpendicular to the fin side surface with a uniform texture and thickness over the fin side surface.

11. The FinBAR according to claim 1 , wherein the width of the fin is in a range of from 0.1 μm to 10 μm.

12. A FinBAR, comprising:
a substrate;
a fin formed on a top surface of the substrate, wherein the fin is characterized with a width and a height;
an inner electrode disposed on the fin;
a piezoelectric layer disposed on the inner electrode;
an outer electrode disposed on the piezoelectric layer;
a first portion formed on the substrate;
a second portion formed on the substrate;
a first connection portion connecting the first portion to the fin;
a second connection portion connecting the second portion to the fin;
a first electrode formed on the top surface of the first portion and connected to the inner electrode;
a second electrode formed on the top surface of the second portion and connected to the outer electrode;
a first through-substrate-via passing through the substrate and connecting to the first electrode; and
a second through-substrate-via passing through the substrate and connecting to the second electrode.

13. The FinBAR according to claim 12 , further comprising an encapsulation layer disposed over the top surface of the substrate, the fin, the inner electrode, the piezoelectric layer, the outer electrode, the first portion, the second portion, the first connection portion, the second connection portion, the first electrode, and the second electrode.

14. The FinBAR according to claim 12 , wherein the first electrode and the second electrode are positioned in a width direction of the fin.

15. The FinBAR according to claim 12 , wherein the substrate is a semiconductor, an insulator, or a fused silica substrate.

16. A FinBAR array, comprising:
a plurality of FinBARs, each being a FinBAR according to claim 13 , wherein at least two of the FinBARs have a different fin width from each other.

17. A method for manufacturing a FinBAR, the method comprising:
providing a substrate;
depositing a hard mask on the substrate;
patterning the hard mask to form a fin, a first portion and a second portion both connecting to the fin, and a trench surrounding the fin, the first portion, and the second portion;
removing the hard mask;
forming a shadow mask around the fin and into the trench such that the fin is exposed through the shadow mask;
forming an inner electrode on the fin;
forming a piezoelectric layer on the inner electrode; and
forming an outer electrode on the piezoelectric layer, wherein a height of the fin is larger than a width of the fin.

18. The method according to claim 17 , further comprising: forming a sacrificial layer on a side surface of the trench and on the fin before forming the shadow mask, wherein the shadow mask is in contact with the sacrificial layer; and removing the sacrificial layer from the side surface of the trench to at least partially free the first and second portions from the substrate.

19. The method according to claim 17 , wherein forming the piezoelectric layer comprises a sputtering process such that the piezoelectric layer has a C-axis perpendicular to a fin side surface, a uniform texture and a uniform thickness over the fin side surface.

Assignees

• Univ Florida

Inventors

• Tabrizian Roozbeh

Classifications

• H03H2003/027

  the resonators or networks being of the microelectro-mechanical [MEMS] type · CPC title

• H03H3/0072

  of microelectro-mechanical resonators or networks (micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C) · CPC title

• H03H9/13

  for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145) · CPC title

• H03H2009/241

  Bulk-mode MEMS resonators · CPC title

• H03H9/2405 Primary

  of microelectro-mechanical resonators · CPC title