Fingerprint recognition sensor and manufacturing method thereof, and display device

Patent metadata

Field	Value
Publication number	US-11605239-B2
Application number	US-202017041516-A
Country	US
Kind code	B2
Filing date	Apr 8, 2020
Priority date	Apr 9, 2019
Publication date	Mar 14, 2023
Grant date	Mar 14, 2023

Abstract

Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

First claim

What is claimed is:

1. A fingerprint recognition sensor, comprising:
a base substrate;
a thin film transistor, located at a first side of the base substrate; and
a photosensitive element, located at a second side of the base substrate away from the thin film transistor,
wherein the first side and the second side are two opposite sides in a thickness direction perpendicular to the base substrate, the base substrate comprises a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

2. The fingerprint recognition sensor according to claim 1 , wherein the conductive structure comprises a first conductive sub-structure and a second conductive sub-structure which are spaced apart from each other, and both the first conductive sub-structure and the second conductive sub-structure penetrate through the base substrate in the thickness direction of the base substrate; and
the photosensitive element comprises: a first electrode on a first surface of the base substrate; a photosensitive layer located at a side of the first electrode away from the base substrate; and a second electrode located at a side of the photosensitive layer away from the first electrode, wherein the first electrode is connected with the first conductive sub-structure, and the second electrode is configured to be electrically connected with the second conductive sub-structure.

3. The fingerprint recognition sensor according to claim 2 , wherein the thin film transistor comprises an active layer, and an orthographic projection of the photosensitive layer on the base substrate overlaps with an orthographic projection of the active layer on the base substrate.

4. The fingerprint recognition sensor according to claim 3 , wherein the orthographic projection of the photosensitive layer on the base substrate covers the orthographic projection of the active layer on the base substrate.

5. The fingerprint recognition sensor according to claim 2 , wherein the photosensitive element further comprises:
a protective layer, covering the first electrode, the photosensitive layer, the second electrode and the first surface of the base substrate; and
a first overlapping electrode, located at a side of the protective layer away from the photosensitive layer,
wherein the protective layer comprises a first via hole and a second via hole, the first overlapping electrode is connected with the second electrode through the first via hole in the protective layer, and the first overlapping electrode is connected with the second conductive sub-structure through the second via hole in the protective layer.

6. The fingerprint recognition sensor according to claim 5 , further comprising:
a third electrode, on a second surface of the base substrate opposite to the first surface and connected with the second conductive sub-structure,
wherein the third electrode is configured to input an operating voltage to the photosensitive element through the second conductive sub-structure and the first overlapping electrode.

7. The fingerprint recognition sensor according to claim 5 , wherein a material of the first overlapping electrode is a transparent electrode material.

8. The fingerprint recognition sensor according to claim 3 , wherein the thin film transistor further comprises:
a gate electrode, on a surface of the base substrate away from the photosensitive element; a gate insulating layer, located at a side of the gate electrode away from the base substrate and covering the gate electrode; and a source electrode, and a drain electrode,
wherein the active layer is located at a side of the gate insulating layer away from the gate electrode, the source electrode and the drain electrode are located at a side of the gate insulating layer away from the active layer, the source electrode and the drain electrode are respectively connected with the active layer, the gate insulating layer comprises a third via hole, the source electrode or the drain electrode is connected with the first conductive sub-structure in the base substrate through the third via hole in the gate insulating layer.

9. The fingerprint recognition sensor according to claim 8 , further comprising:
a passivation layer, located at a side of the source electrode and the drain electrode away from the active layer, and covering the source electrode, the drain electrode, the active layer and the gate insulating layer.

10. A manufacturing method of a fingerprint recognition sensor, comprising:
providing a base substrate comprising a conductive structure penetrating through the base substrate in a thickness direction perpendicular to the base substrate;
forming a thin film transistor at a first side of the base substrate; and
forming a photosensitive element at a second side of the base substrate away from the thin film transistor,
wherein the first side and the second side are two opposite sides in a thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

11. The manufacturing method according to claim 10 , wherein the conductive structure comprises a first conductive sub-structure and a second conductive sub-structure which are spaced apart from each other, and both the first conductive sub-structure and the second conductive sub-structure penetrate through the base substrate in the thickness direction of the base substrate; and
forming the photosensitive element on the side of the base substrate away from the thin film transistor comprises:
forming a first electrode on a first surface of the base substrate;
forming a photosensitive layer at a side of the first electrode away from the base substrate; and
forming a second electrode at a side of the photosensitive layer away from the first electrode,
wherein the first electrode is connected with the first conductive sub-structure, and the second electrode is configured to be electrically connected with the second conductive sub-structure.

12. The manufacturing method according to claim 11 , wherein forming the photosensitive element on the side of the base substrate away from the thin film transistor further comprises:
forming a protective layer at a side of the second electrode away from the photosensitive layer, the protective layer covering the first electrode, the photosensitive layer, the second electrode and the first surface of the base substrate; and
forming a first overlapping electrode at a side of the protective layer away from the photosensitive layer,
wherein the protective layer comprises a first via hole and a second via hole, the first overlapping electrode is connected with the second electrode through the first via hole in the protective layer, and the first overlapping electrode is connected with the second conductive sub-structure through the second via hole in the protective layer.

13. The manufacturing method according to claim 12 , further comprising:
forming a third electrode on a second surface of the base substrate opposite to the first surface,
wherein the third electrode is connected with the second conductive sub-structure, and the third electrode is configured to input an operating voltage to the photosensitive element through the second conductive sub-structure and the first overlapping electrode.

14. The manufacturing method according to claim 11 , wherein forming the thin film transistor on the side of the base substrate comprises:
forming a gate electrode at a s

Assignees

• Boe Technology Group Co Ltd

Inventors

• Li Shipei
• Zhao Ying
• Gu Renquan
• He Wei
• Wu Huili
• Yin Dongsheng
• Xu Sheng
• Zhang Lizhen
• Zhao Xuefei
• He Fang
• Gao Yupeng

Classifications

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/8033

  Photosensitive area · CPC title

• H10F39/812

  Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region · CPC title

• H10F39/011

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title

• H10F39/198 Primary

  Contact-type image sensors [CIS] · CPC title