Cooler device with superconductor shunts
US-10998485-B1 · May 4, 2021 · US
US11600760B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11600760-B2 |
| Application number | US-201916696372-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 26, 2019 |
| Priority date | Nov 26, 2019 |
| Publication date | Mar 7, 2023 |
| Grant date | Mar 7, 2023 |
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A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.
Opening claim text (preview).
What is claimed is: 1. A solid state cooler device comprising: a first normal metal pad; a first aluminum layer and a second aluminum layer both disposed on and directly attached to the first normal metal pad and separated from one another by a gap; a first aluminum oxide layer formed on and directly attached to the first aluminum layer, and a second aluminum oxide layer formed on and directly attached to the second aluminum layer; a first superconductor pad disposed on and directly attached to the first aluminum oxide layer and a second superconductor pad disposed on and directly attached to the second aluminum oxide layer; a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad; and wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad. 2. The solid state cooler device of claim 1 , wherein each the first conductive pad and the second conductive pad are formed of a normal metal and function as quasi-particle traps. 3. The solid state cooler device of claim 1 , wherein the first and second aluminum layers have a thickness that causes the aluminum layers to inverse proximitize on the first normal metal pad and the aluminum oxide layer has a thickness that assures its functionality as an insulator. 4. The solid state cooler device of claim 1 , wherein the first normal metal pad is disposed on or in the first substrate or a dielectric layer and the first and second conductive pads are disposed on or in a second substrate. 5. The solid state cooler device of claim 4 , wherein the first conductive pad is coupled to the first superconductor pad by a first set of conductive contacts, and the second conductive pad is coupled to the second superconductor pad by a second set of conductive contacts. 6. The solid state cooler device of claim 5 , wherein the first and second set of conductive contacts are bump bonds, such that the bump bonds bond the first substrate to the second substrate. 7. The solid state cooler device of claim 1 , wherein a temperature sensor is disposed on a side of the first substrate opposite the side of the first normal metal pad. 8. The solid state cooler device of claim 1 , further comprising: a second normal metal pad wherein the first normal metal pad and the second normal metal pad are disposed on or in a first substrate or a dielectric layer and separated from one another by a gap; a third aluminum layer and a fourth aluminum layer disposed on the second normal metal pad and separated by a gap; a third aluminum oxide layer formed on the third aluminum layer, and a fourth aluminum oxide layer formed on the fourth aluminum layer; a third superconductor pad disposed on the third aluminum oxide layer and a fourth superconductor pad disposed on the fourth aluminum oxide layer, wherein a first end of the second conductive pad is coupled to the second superconductor pad, and a second end of the second conductive pad is coupled to the third superconductor pad; and a third conductive pad coupled to the fourth superconductor pad. 9. The solid state cooler device of claim 8 , further comprising a first electrical wire coupled to the first conductive pad and a second electrical wire coupled to the third conductive pad, wherein hot electrons are removed from the first normal metal pad and the second normal metal pad when the bias voltage is applied between the first electrical wire and the second electrical wire. 10. The solid state cooler device of claim 1 , wherein the first normal metal pad is formed from one of titanium and titanium tungsten. 11. A refrigeration system comprising a plurality of refrigeration stages, wherein a last stage comprises a refrigeration container and a plurality of solid state cooler devices as claimed in claim 1 disposed about the refrigeration container.
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