On-chip thermoelectric generator

US9755130B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9755130-B2
Application numberUS-201514934895-A
CountryUS
Kind codeB2
Filing dateNov 6, 2015
Priority dateNov 6, 2014
Publication dateSep 5, 2017
Grant dateSep 5, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An on-chip thermoelectric generator comprises an integrated circuit comprising a substrate and at least one thermocouple integrated with the substrate, wherein the thermocouple is configured to convert a temperature difference into a voltage. A metal bump or metal pillar is thermally connected to a portion of the thermocouple for generating the temperature difference. The metal bump or metal pillar is electrically insulated from said at least one thermocouple. The metal bump or metal pillar is electrically connected to a component of the integrated circuit which is different from the thermocouple.

First claim

Opening claim text (preview).

What is claimed is: 1. An on-chip thermoelectric generator comprising: an integrated circuit comprising a substrate and at least one thermocouple integrated with the substrate, wherein the thermocouple is configured to convert a temperature difference into a voltage; and a metal bump or metal pillar thermally connected to a portion of the thermocouple for generating the temperature difference, wherein the metal bump or metal pillar is electrically insulated from said at least one thermocouple, and wherein the metal bump or metal pillar is electrically connected to a component of the integrated circuit which is different from the thermocouple. 2. The on-chip thermoelectric generator of claim 1 , wherein the metal bump or metal pillar is configured to convey an electric signal to the component. 3. The on-chip thermoelectric generator of claim 1 , wherein the thermocouple comprises a first n+ area enclosed by a second n+ area and/or a first p+ area enclosed by a second p+ area. 4. The on-chip thermoelectric generator of claim 3 , further comprising a metal connection connected to the first n+ area and/or the first p+ area of the thermocouple, wherein at least part of the metal connection is aligned with a surface of the metal bump or metal pillar, wherein the metal bump or metal pillar is electrically isolated from the metal connection by means of a silicon oxide layer. 5. The on-chip thermoelectric generator of claim 3 , wherein the thermocouple comprises both the first n+ area enclosed by the second n+ area and the first p+ area enclosed by the second p+ area, and wherein the first n+ area is electrically connected to the first p+ area. 6. The on-chip thermoelectric generator of claim 5 , comprising a metal object configured to electrically connect the first p+ area to the first n+ area and thermally connect the first p+ area and the first n+ area to the metal bump or metal pillar. 7. The on-chip thermoelectric generator of claim 3 , wherein the first n+ area and the second n+ area are formed on or in an n-well, and/or wherein the first p+ area and the second p+ area are formed on or in a p-well. 8. The on-chip thermoelectric generator of claim 1 , wherein the metal bump or metal pillar is configured to be further thermally connected to a heat source, to supply heat from the heat source to the portion of the thermocouple to which the metal bump or metal pillar is thermally connected. 9. The on-chip thermoelectric generator of claim 5 , comprising a thermopile comprising a sequence of thermocouples, each thermocouple comprising the first n+ area enclosed by the second n+ area and the first p+ area enclosed by the second p+ area, and wherein the first n+ area is electrically connected to the first p+ area, and wherein the second p+ area of a first thermocouple is electrically connected to the second n+ area of a second thermocouple. 10. The on-chip thermoelectric generator of claim 1 , wherein the metal bump is a solder bump or a solder ball, or the metal pillar is a copper pillar. 11. The on-chip thermoelectric generator of claim 1 , wherein the integrated circuit comprises a CMOS integrated circuit.

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • Electricity · mapped topic

  • Electricity · mapped topic

  • H01L35/30Primary

    Electricity · mapped topic

  • H10N19/00Primary

    Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00 · CPC title

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Frequently asked questions

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What does patent US9755130B2 cover?
An on-chip thermoelectric generator comprises an integrated circuit comprising a substrate and at least one thermocouple integrated with the substrate, wherein the thermocouple is configured to convert a temperature difference into a voltage. A metal bump or metal pillar is thermally connected to a portion of the thermocouple for generating the temperature difference. The metal bump or metal pi…
Who is the assignee on this patent?
Dialog Semiconductor Bv
What technology area does this patent fall under?
Primary CPC classification H01L35/30. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).