Elastic wave device, high-frequency front end circuit, and communication apparatus

Patent metadata

Field	Value
Publication number	US-11595024-B2
Application number	US-201916429098-A
Country	US
Kind code	B2
Filing date	Jun 3, 2019
Priority date	Dec 5, 2016
Publication date	Feb 28, 2023
Grant date	Feb 28, 2023

Abstract

An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a silicon oxide film arranged on the piezoelectric substrate to cover the IDT electrode. The IDT electrode includes first and second electrode layers laminated on each other, the first electrode layer is made of metal or an alloy with a density higher than a density of metal of the second electrode layer and a density of silicon oxide of the silicon oxide film, the piezoelectric substrate is made of LiNbO 3 and θ is in a range of equal to or greater than about 8° and equal to or less than about 32° with Euler Angles (0°±5°, θ, 0°±10°) of the piezoelectric substrate, and the silicon oxide film contains hydrogen atoms, hydroxyl groups, or silanol groups.

First claim

What is claimed is:

1. An elastic wave device comprising:
a piezoelectric substrate;
an IDT electrode provided on the piezoelectric substrate; and
a silicon oxide film provided on the piezoelectric substrate so as to cover the IDT electrode; wherein
the IDT electrode includes:
a first electrode layer; and
a second electrode layer laminated on the first electrode layer;

the first electrode layer is made of metal or an alloy with a density higher than a density of metal of the second electrode layer and a density of silicon oxide of the silicon oxide film;
the piezoelectric substrate is made of LiNbO 3 and θ is in a range of equal to or greater than about 8° and equal to or less than about 32° in Euler Angles (0°±5°, θ, 0°±10°) of the piezoelectric substrate;
the silicon oxide film includes a hydrogen atom, a hydroxyl group, or a silanol group;
the first electrode layer is at least one selected from a group consisting of Pt, W, Mo, Ta, Au, and Cu and alloys containing Pt, W, Mo, Ta, Au, and Cu as main components; and
a wavelength determined by an electrode finger pitch of the IDT electrode is λ, and a thickness and a material of the first electrode layer are defined as follows:

MATERIAL OF
THICKNESS OF FIRST

FIRST ELECTRODE LAYER
ELECTRODE LAYER

Pt OR ALLOY CONTAINING Pt AS
EQUAL TO OR GREATER

MAIN COMPONENT
THAN 0.047 λ

W OR ALLOY CONTAINING W AS
EQUAL TO OR GREATER

MAIN COMPONENT
THAN 0.062 λ

Mo OR ALLOY CONTAINING Mo AS
EQUAL TO OR GREATER

MAIN COMPONENT
THAN 0.144 λ

Ta OR ALLOY CONTAINING Ta AS
EQUAL TO OR GREATER

MAIN COMPONENT
THAN 0.074 λ

Au OR ALLOY CONTAINING Au AS
EQUAL TO OR GREATER

MAIN COMPONENT
THAN 0.042 λ

Cu OR ALLOY CONTAINING Cu AS
EQUAL TO OR GREATER

MAIN COMPONENT
THAN 0.136 λ.

2. The elastic wave device according to claim 1 , wherein
the elastic wave device utilizes a Rayleigh wave; and
a thickness of the first electrode layer is set such that an acoustic velocity of a Shear Horizontal wave is lower than an acoustic velocity of the Rayleigh wave.

3. The elastic wave device according to claim 1 , wherein the second electrode layer is made of Al, Cu, or an alloy containing Al or Cu as a main component.

4. The elastic wave device according to claim 3 , wherein a thickness of the second electrode layer is equal to or greater than about 0.0175λ.

5. The elastic wave device according to claim 1 , wherein a thickness of the silicon oxide film is equal to or less than about 0.40λ.

6. The elastic wave device according to claim 1 , wherein a duty ratio of the IDT electrode is equal to or higher than about 0.48.

7. The elastic wave device according to claim 1 , wherein a duty ratio of the IDT electrode is equal to or higher than about 0.55.

8. The elastic wave device according to claim 1 , wherein 0 is in a range of equal to or greater than about 8° and equal to or less than about 30°.

9. The elastic wave device according to claim 1 , wherein 0 is in a range of equal to or greater than about 8° and equal to or less than about 28°.

10. The elastic wave device according to claim 1 , wherein 0 is in a range of equal to or greater than about 12° and equal to or less than about 26°.

11. The elastic wave device according to claim 1 , further comprising reflectors on both sides of the IDT.

12. The elastic wave device according to claim 1 , wherein the elastic wave device is a one port elastic wave resonator.

13. A filter comprising the elastic wave device according to claim 1 .

14. The filter according to claim 13 , wherein the filter is one of a ladder filter, a longitudinally-coupled resonator filter, and a lattice filter.

15. A high-frequency front end circuit comprising:
the elastic wave device according to claim 1 ; and
a power amplifier.

16. The high-frequency front end circuit according to claim 15 , wherein the elastic wave device defines a duplexer of the high-frequency front end circuit.

17. A communication apparatus comprising:
the high-frequency front end circuit according to claim 15 ; and
an RF signal processing circuit.

18. The communication apparatus according to claim 17 , wherein the elastic wave device defines a duplexer of the high-frequency front end circuit.

Assignees

• Murata Manufacturing Co

Inventors

• Takahashi Hideaki
• Sakaguchi Hirokazu
• Nakai Yasuharu

Classifications

• H03H9/02543

  Characteristics of substrate, e.g. cutting angles · CPC title

• H03H9/02818

  Means for compensation or elimination of undesirable effects · CPC title

• H03H9/02834 Primary

  of temperature influence (cut angles H03H9/02543) · CPC title

• H03H9/14541 Primary

  Multilayer finger or busbar electrode · CPC title

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title